We investigate the application of fluorescence quenching microscopy (FQM) for visual characterization of graphene quality, number of layers and uniformity over its landscape. The method relies on the fact that pristine, modified and multi-layer graphene regions quench fluorescence with different rates. Steady-state and time-resolved emission spectroscopy are used to comparatively characterize the photophysical behavior of pristine graphene relative to unquenched dye on bare substrate. The results demonstrate that with premeditated choice of Fluorescence dye, the interaction between fluorophores and graphene provides valuable tools for identifying the chemical structure and thickness of graphene. Fluorescence quenching metrology can be implemented as the basis for a microscopy based metrology for 2D materials.
Graphene’s unique mechanical, electrical, and thermal properties have made it a very attractive material desired for use in future technologies. Over the recent years, there have been many breakthroughs in research on graphene. Recently, the focus of the latest research has shifted towards scaling graphene production for commercial use by industry. The most promising method for scaling graphene growth for industry usage is chemical vapor deposition (CVD). CVD is a low cost, economic and scalable method for producing graphene. However, consistently producing high quality graphene quickly on a large scale has eluded researchers. Here we detail a method for reducing growth time required to produce high quality, large area graphene by adjusting the fluid mechanics of the CVD.