In this work, we theoretically investigate optical bistability and optical response of a hybrid system consisting of semiconductor quantum dot (SQD) coupled with a vanadium dioxide nanoparticle (VO2NP) in the infrared (IR) regime. The VO2 material exists in semiconductor and metallic phases below and above the critical temperature, respectively where the particle optical properties dramatically change during this phase transition. In our calculations a filling fraction factor controls the VO2NP phase transition when the hybrid system interacts with a laser field. We demonstrate that the switch-up threshold for optical bistability is strongly controlled by filling fraction without changing the structure of the hybrid system. Also, it is shown that, the threshold of optical bistability increases when the VO2NP phases changes from semiconductor to metallic phase. The presented results have the potential to be applied in designing optical switching and optical storage.
We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton–polariton and exciton–plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.
We propose the use of one-dimensional semiperiodic front and back gratings based on Thue–Morse, Fibonacci, and Rudin–Shapiro (RS) binary sequences as promising photon management techniques for enhancing ultra-broadband optical absorption in thin-film solar cells. The semiperiodicity allows an aggregate light in-coupling into the active layer within the range of the solar spectrum that is less weak compared to an inherently broadband random grating, but has a much larger bandwidth than the strong in-coupling via a periodic grating configuration. The proper design procedure proposed here deviates from a canonical double grating synthesis as it adheres to an ultra-broadband design where the spectrally integrated absorption in the active material is the proper subject to optimization, leaving the grating perturbations just a measure to perturb and mold the trapped light field in the active layer accordingly. It is shown that by using a well-defined RS double grating in a 400-nm thick crystalline silicon solar cell, a 110.2% enhancement of the spectrally integrated optical absorption can be achieved relative to the reference case without grating.
Gamma ray radiation can change the refractive index of Ge-doped silica glass proportional to ray dose. These changes
can shift the resonance frequencies of whispering gallery modes of microdisk. A fiber coupled microdisk has been used
to design a Gamma-ray dose sensor. The 800MHz shift in resonance frequency of whispering gallery mode of microdisk,
due to Gamma ray radiation has been used to detect Gamma dose in the range of 0 to 1MGy.