In 2005, Carl Zeiss SMT AG has shipped two sets of Optics for ASML's Alpha Demo Tools. This was the starting point
for the introduction of full field EUV systems. Meanwhile imaging down to 25 nm was demonstrated with the ADT
tools. Based on the learning from these tools ASML has built the NXE platform - a multi-generation EUV production
platform. Shipping in 2010, the NXE:3100 will be the first generation of the EUV exposure platform. We review the
current status of EUV optics production for the NXE:3100 tools.
Four optical systems of the 3100 series have been shipped so far. These sets of optics are characterized by significantly
lower flare and wave-front levels compared to the ADT. In addition a new illumination system with higher partial
coherence has been developed. In this paper we focus on mirror fabrication and at wavelength qualification results of the
optical systems produced so far.
We also will give an outline of the next generation, a 0.32NA exposure tool including EUVL off-axis illumination for
resolutions down to 16nm. We take the expected imaging requirements as a starting point and compare it with the current
status of our technology development. A brief overview for further tool extensions by higher NA will be given as well.
Dioptric systems are usually the first choice for the design of an optical system, e.g. a projection lens or a microscope. But in some cases refractive designs suffer from serious drawbacks like chromatic aberration or material problems (cost, quality, absorption, birefringence, etc.). In such cases reflective systems are an attractive alternative. Reflective systems can be subdivided into two classes: on one hand there are systems with central pupil obscuration, e.g. reflective microscopes or telescopes in astronomy, which have a high aperture but only a small field size, on the other hand there are unobscured systems, e.g. reflective relay systems or EUV projection lenses, which have a large field but only small aperture.
By the combination of an unobscured and an obscured mirror system one obtains systems with large field and high numerical aperture. We present new designs, which prove this design principle.
The continuing trend towards higher integration density of microelectronic circuits requires steadily decreasing feature sizes. The SIA roadmap defines the technologies needed to meet this challenges. One of the fundamental requirements for lithography with a resolution of 100 nm and below is the development of new high-performance optical designs for projection lenses.