Dr. Hans Loeschner Profile

Dr. Hans Loeschner

Co-Founder & Senior Advisor at IMS Nanofabrication GmbH

SPIE Involvement:

Conference Program Committee | Conference Chair | Author

Area of Expertise:

maskless lithography and nanopatterning , electron and ion multi-beam technology

Websites:

Company Website

Publications (61)

Proceedings Article | 10 April 2024 Presentation

MBMW-301: Multi-beam mask writer technology is entering the angstrom era

Stefan Kuhn, Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume PC12956, PC1295606 (2024) https://doi.org/10.1117/12.3012898

KEYWORDS: Extreme ultraviolet, Nanofabrication, Advanced patterning

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SPIE Journal Paper | 10 February 2024 Open Access

Multi-beam mask writing opens up new fields of application, including curvilinear mask pattern for high numerical aperture extreme ultraviolet lithography

Mathias Tomandl, Christoph Spengler, Peter Hudek, Christof Klein, Hans Loeschner, Elmar Platzgummer

JM3, Vol. 23, Issue 01, 011205, (February 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.011205

KEYWORDS: Extreme ultraviolet, Distortion, Lenses, Nanofabrication, Industry, Magnetism, Industrial applications, Lithography, Extreme ultraviolet lithography, Projection systems

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Proceedings Article | 22 November 2023 Presentation

MBMW-301: paving the way towards the angstrom era of mask writing lithography

Christoph Spengler, Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume PC12751, PC127510R (2023) https://doi.org/10.1117/12.2688204

KEYWORDS: Lithography, Nanofabrication, Extreme ultraviolet, Standards development, Optical lithography

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Proceedings Article | 22 November 2023 Presentation

MBMW-100 flex, the 1st electron multi-beam mask writer for mature and advanced mask nodes

Mathias Tomandl, Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume PC12751, PC127510I (2023) https://doi.org/10.1117/12.2688257

KEYWORDS: Vestigial sideband modulation, Optical proximity correction, Industrial applications, Standards development, Reliability, Photomasks, Nanofabrication, Logic, Lithography, Line edge roughness

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Proceedings Article | 5 October 2023 Paper

Multi-beam mask writing opens up new fields of application

Mathias Tomandl, Christoph Spengler, Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 12802, 1280204 (2023) https://doi.org/10.1117/12.2678532

KEYWORDS: Distortion, Lenses, Nanofabrication, Magnetism, Extreme ultraviolet, Industry, Projection systems, Industrial applications, Mask making, Advanced patterning

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Proceedings Article | 30 April 2023 Presentation

MBMW-301: a revolutionary step for multi-beam mask writers

Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume PC12497, PC1249707 (2023) https://doi.org/10.1117/12.2661123

KEYWORDS: Standards development, Extreme ultraviolet

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Proceedings Article | 13 June 2022 Presentation

The future of MBMW multi-beam mask writers

Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume PC12054, PC120540H (2022) https://doi.org/10.1117/12.2618052

KEYWORDS: Standards development, Reliability, Extreme ultraviolet

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Proceedings Article | 2 December 2019 Open Access

MBMW-201: The next generation multi-beam mask writer (Conference Presentation) (Withdrawal Notice)

Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 10958, 109580K (2019) https://doi.org/10.1117/12.2516033

KEYWORDS: Photomasks, Optical lithography, Semiconductors, Microopto electromechanical systems, Video

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Proceedings Article | 31 October 2018 Open Access

Multi-beam – enabling leading-edge mask writing (Conference Presentation) (Withdrawal Notice)

Christoph Spengler, Elmar Platzgummer, Hans Loeschner

Proceedings Volume 10810, 108100I (2018) https://doi.org/10.1117/12.2503330

KEYWORDS: Nanofabrication, Photomask technology

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SPIE Journal Paper | 11 September 2015 Open Access

Special Section Guest Editorial: Alternative Lithographic Technologies IV

Douglas Resnick, Ricardo Ruiz, Hans Loeschner

JM3, Vol. 14, Issue 03, 031201, (September 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.3.031201

KEYWORDS: Lithography, Optical lithography, Nanofabrication, Extreme ultraviolet lithography, Nanotechnology, Nanoimprint lithography, Silver, Extreme ultraviolet, Integrated circuit design, Directed self assembly

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Proceedings Article | 1 October 2013 Paper

Performance of the proof-of-concept multi-beam mask writer (MBMW POC)

Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 8880, 88801E (2013) https://doi.org/10.1117/12.2030772

KEYWORDS: Photomasks, Line width roughness, Vestigial sideband modulation, Beam shaping, Image registration, Calibration, Logic, Metrology, Nanofabrication, Inspection

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SPIE Journal Paper | 2 August 2013 Open Access

Electron multibeam technology for mask and wafer writing at 0.1 nm address grid

Elmar Platzgummer, Christof Klein, Hans Loeschner

JM3, Vol. 12, Issue 03, 031108, (August 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.3.031108

KEYWORDS: Photomasks, Semiconducting wafers, Electron beam direct write lithography, Electron beam lithography, Nanofabrication, Lithography, Beam shaping, Optical proximity correction, Wafer-level optics, Electron beams

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Proceedings Article | 26 March 2013 Open Access

Electron multi-beam technology for mask and wafer writing at 0.1nm address grid

Elmar Platzgummer, Christof Klein, Hans Loeschner

Proceedings Volume 8680, 868004 (2013) https://doi.org/10.1117/12.2014661

KEYWORDS: Photomasks, Beam shaping, Semiconducting wafers, Lithography, Electron beam lithography, Nanofabrication, Electron beam direct write lithography, Line width roughness, Electron beams, Vestigial sideband modulation

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Proceedings Article | 8 November 2012 Paper

Printing results of a proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)

Elmar Platzgummer, Christof Klein, Hans Loeschner

Proceedings Volume 8522, 85221H (2012) https://doi.org/10.1117/12.964988

KEYWORDS: Photomasks, Optical proximity correction, Printing, Electron beam lithography, Lithography, Projection systems, Critical dimension metrology, Nanofabrication, Wafer-level optics, Silicon

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SPIE Journal Paper | 7 August 2012

50-keV electron multibeam mask writer for the 11-nm HP node: first results of the proof-of-concept electron multibeam mask exposure tool

Christof Klein, Hans Loeschner, Elmar Platzgummer

JM3, Vol. 11, Issue 3, 031402, (August 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.031402

KEYWORDS: Photomasks, Scanning electron microscopy, Nanofabrication, Silicon, Semiconducting wafers, Projection systems, Lithography, Optical lithography, Calibration, High volume manufacturing

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Proceedings Article | 30 June 2012 Paper

Results of proof-of-concept 50keV electron multi-beam mask exposure tool (eMET POC)

Elmar Platzgummer, Christof Klein, Hans Loeschner

Proceedings Volume 8441, 84410B (2012) https://doi.org/10.1117/12.978999

KEYWORDS: Photomasks, Silicon, Semiconducting wafers, Lithography, Code division multiplexing, Nanofabrication, Optical proximity correction, Diagnostics, Silver, Electron beams

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Proceedings Article | 21 March 2012 Paper

50 keV electron multibeam mask writer for the 11nm HP node: first results of the proof of concept tool (eMET POC)

Christof Klein, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 8323, 83230G (2012) https://doi.org/10.1117/12.916613

KEYWORDS: Photomasks, Scanning electron microscopy, Nanofabrication, Silicon, Semiconducting wafers, Lithography, High volume manufacturing, Projection systems, Optical lithography, Calibration

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Proceedings Article | 14 October 2011 Paper

eMET POC: realization of a proof-of-concept 50 keV electron multibeam mask exposure tool

Elmar Platzgummer, Christof Klein, Hans Loeschner

Proceedings Volume 8166, 816622 (2011) https://doi.org/10.1117/12.895523

KEYWORDS: Photomasks, Silicon, Logic, Projection systems, Electronics, Line width roughness, Electron beams, Electrodes, Monte Carlo methods, Magnetism

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Proceedings Article | 4 April 2011 Paper

Soft UV-NIL at the 12.5 nm scale

G. Kreindl, M. Kast, D. Treiblmayr, T. Glinsner, E. Platzgummer, H. Loeschner, P. Joechl, S. Eder-Kapl, T. Nartz, M. Muehlberger, I. Bergmair, M. Boehm, R. Schoeftner

Proceedings Volume 7970, 79701M (2011) https://doi.org/10.1117/12.870524

KEYWORDS: Nanoimprint lithography, Scanning electron microscopy, Lithography, Polymers, Ion beam lithography, Silicon, Ultraviolet radiation, Nanofabrication, Silver, Manufacturing

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Proceedings Article | 2 April 2011 Paper

eMET: 50 keV electron multibeam mask exposure tool

Christof Klein, Jan Klikovits, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7970, 79700C (2011) https://doi.org/10.1117/12.879419

KEYWORDS: Optical proximity correction, Critical dimension metrology, Photomasks, Ions, Optical simulations, Nanofabrication, Projection systems, Electron beams, Beam controllers, Control systems

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Proceedings Article | 29 September 2010 Paper

eMET: 50 keV electron mask exposure tool development based on proven multi-beam projection technology

Elmar Platzgummer, Stefan Cernusca, Christof Klein, Jan Klikovits, Samuel Kvasnica, Hans Loeschner

Proceedings Volume 7823, 782308 (2010) https://doi.org/10.1117/12.864261

KEYWORDS: Photomasks, Lithography, Projection systems, Chromium, Quartz, Nanofabrication, Control systems, Ions, 193nm lithography, Particles

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Proceedings Article | 26 May 2010 Paper

eMET: development of a 50 keV electron projection multibeam mask exposure tool for the 16nm hp technology node and below

Elmar Platzgummer, Stefan Cernusca, Christof Klein, Samuel Kvasnica, Bernd Sonalkar, Hans Loeschner

Proceedings Volume 7748, 77480H (2010) https://doi.org/10.1117/12.866350

KEYWORDS: Control systems, Optical simulations, Photomasks, Virtual reality, Electron beams, Projection systems, Nanofabrication, Ions, Lithography, Beam controllers

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Proceedings Article | 15 May 2010 Paper

Projection mask-less lithography and nanopatterning with electron and ion multi-beams

Christof Klein, Elmar Platzgummer, Hans Loeschner

Proceedings Volume 7545, 75450Q (2010) https://doi.org/10.1117/12.863143

KEYWORDS: Ions, Lithography, Nanostructures, Nanofabrication, Electron beams, Photomasks, Ion beam lithography, Electron beam lithography, Particles, Silicon

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Proceedings Article | 15 May 2010 Paper

Template masters for substrate conformal imprint lithography generated by charged particle nanopatterning techniques

Falco van Delft, Robert van de Laar, Marc Verschuuren, Elmar Platzgummer, Hans Loeschner

Proceedings Volume 7545, 75450S (2010) https://doi.org/10.1117/12.863198

KEYWORDS: Sol-gels, Silicon, Ions, Lithography, Particles, Nanostructures, Hydrogen, Glasses, Semiconducting wafers, Photomasks

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Proceedings Article | 1 April 2010 Paper

50 keV electron-beam projection maskless lithography (PML2): results obtained with 2,500 programmable 12.5-nm sized beams

Christof Klein, Jan Klikovits, Laszlo Szikszai, Elmar Platzgummer, Hans Loeschner

Proceedings Volume 7637, 76370B (2010) https://doi.org/10.1117/12.846544

KEYWORDS: Semiconducting wafers, Maskless lithography, Lithography, Electronics, Silicon, Scanning electron microscopy, Electron beam lithography, Projection systems, CMOS technology, Electrodes

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Proceedings Article | 23 September 2009 Paper

Charged particle multi-beam lithography evaluations for sub-16nm hp mask node fabrication and wafer direct write

Elmar Platzgummer, Christof Klein, Peter Joechl, Hans Loeschner, Martin Witt, Wolfgang Pilz, Joerg Butschke, Michael Jurisch, Florian Letzkus, Holger Sailer, Mathias Irmscher

Proceedings Volume 7488, 74881D (2009) https://doi.org/10.1117/12.832156

KEYWORDS: Photomasks, Ions, Semiconducting wafers, Lithography, Nanofabrication, Silicon, Particles, Electronics, Nanostructures, Electron beams

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Proceedings Article | 23 September 2009 Paper

3D Si aperture-plates combined with programmable blanking-plates for multi-beam mask writing

Florian Letzkus, Mathias Irmscher, Michael Jurisch, Elmar Platzgummer, Christof Klein, Hans Loeschner

Proceedings Volume 7488, 74883C (2009) https://doi.org/10.1117/12.829630

KEYWORDS: Silicon, Etching, Electrodes, Semiconducting wafers, Photomasks, Lithography, 3D metrology, Standards development, Beam shaping, Oxides

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Proceedings Article | 11 May 2009 Paper

Go proton: investigation on mask patterning for the 22nm hp node using a ML2 multibeam system

Joerg Butschke, Mathias Irmscher, Holger Sailer, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7379, 73792O (2009) https://doi.org/10.1117/12.824338

KEYWORDS: Photomasks, Line edge roughness, Critical dimension metrology, Line width roughness, Optical lithography, Etching, Nanofabrication, Electrons, Ions, Silver

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Proceedings Article | 18 March 2009 Paper

PML2: the maskless multibeam solution for the 22nm node and beyond

C. Klein, E. Platzgummer, J. Klikovits, W. Piller, H. Loeschner, T. Bejdak, P. Dolezel, V. Kolarik, W. Klingler, F. Letzkus, J. Butschke, M. Irmscher, M. Witt, W. Pilz, P. Jaschinsky, F. Thrum, C. Hohle, J. Kretz, J. Nogatch, A. Zepka

Proceedings Volume 7271, 72710N (2009) https://doi.org/10.1117/12.813670

KEYWORDS: Semiconducting wafers, Lithography, Electron beams, Electrodes, Prototyping, Electron beam lithography, Electron beam direct write lithography, Silicon, Optical alignment, Photomasks

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Proceedings Article | 18 March 2009 Paper

3D ion multibeam processing with the CHARPAN PMLP tool and with the single ion-beam FIB tool optimized with the IonRevSim software

S. Zaitsev, A. Svintsov, C. Ebm, S. Eder-Kapl, H. Loeschner, E. Platzgummer, G. Lalev, S. Dimov, V. Velkova, B. Basnar

Proceedings Volume 7271, 72712P (2009) https://doi.org/10.1117/12.814158

KEYWORDS: Ions, Sputter deposition, 3D modeling, Etching, Ion beams, Isotropic etching, Process modeling, Optical simulations, Software development, Microlens

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Proceedings Article | 20 October 2008 Paper

Deflection unit for multi-beam mask making

Florian Letzkus, Joerg Butschke, Mathias Irmscher, Michael Jurisch, Wolfram Klingler, Elmar Platzgummer, Christof Klein, Hans Loeschner, Reinhard Springer

Proceedings Volume 7122, 712235 (2008) https://doi.org/10.1117/12.801401

KEYWORDS: Etching, Silicon, Electrodes, Semiconducting wafers, Lithography, Aluminum, Mask making, Optical alignment, Switching, Line edge roughness

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Two main challenges of future mask making are the decreasing throughput of the pattern generators and the insufficient line edge roughness of the resist structures. The increasing design complexity with smaller feature sizes combined with additional pattern elements of the Optical Proximity Correction generates huge data volumes which reduce correspondingly the throughput of conventional single e-beam pattern generators. On the other hand the achievable line edge roughness when using sensitive chemically amplified resists does not fulfill the future requirements. The application of less sensitive resists may provide an improved roughness, however on account of throughput, as well. To overcome this challenge a proton multi-beam pattern generator is developed [1]. Starting with a highly parallel broad beam, an aperture-plate is used to generate thousands of separate spot beams. These beams pass through a blanking-plate unit, based on a CMOS device for de-multiplexing the writing data and equipped with electrodes placed around the apertures switching the beams "on" or "off", dependent on the desired pattern. The beam array is demagnified by a 200x reduction optics and the exposure of the entire substrate is done by a continuous moving stage. One major challenge is the fabrication of the required high aspect deflection electrodes and their connection to the CMOS device. One approach is to combine a post-processed CMOS chip with a MEMS component containing the deflection electrodes and to realize the electrical connection of both by vertical integration techniques. For the evaluation and assessment of this considered scheme and fabrication technique, a proof-of-concept deflection unit has been realized and tested. Our design is based on the generation of the deflection electrodes in a silicon membrane by etching trenches and oxide filling afterwards. In a 5mm x 5mm area 43,000 apertures with the corresponding electrodes have been structured and wired individually or in groups with aluminum lines. The aperture-plate for shaping the beams has been aligned and mounted on top of the blanking-plate. Afterwards this sandwich has been fixed on a base-plate with a pin plug as interface. The electrical connection has been performed with a standard chip bonding process to the aluminum pads on the blanking-plate. Finally, the proof-of-concept deflection unit was evaluated in a test bench. The results of electrical- and exposure tests are presented and discussed in detail.

Proceedings Article | 20 October 2008 Paper

Mask patterning for the 22nm node using a proton multi-beam projection pattern generator

Joerg Butschke, Mathias Irmscher, Holger Sailer, Lorenz Nedelmann, Marcus Pritschow, Hans Loeschner, Elmar Platzgummer

Proceedings Volume 7122, 712236 (2008) https://doi.org/10.1117/12.801402

KEYWORDS: Etching, Electron beam lithography, Line edge roughness, Photoresist processing, Electron beams, Ion beams, Photomasks, Line width roughness, Ions, Nanofabrication

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Proceedings Article | 17 October 2008 Paper

Results obtained with the CHARPAN Engineering Tool and prospects of the ion Mask Exposure Tool (iMET)

Elmar Platzgummer, Hans Loeschner, Gerhard Gross

Proceedings Volume 7122, 71220L (2008) https://doi.org/10.1117/12.801441

KEYWORDS: Ions, Photomasks, Ion beams, Hydrogen, Nanotechnology, Line edge roughness, Electrodes, Silicon, Particles, Resolution enhancement technologies

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Proceedings Article | 28 March 2008 Paper

MAGIC: a European program to push the insertion of maskless lithography

L. Pain, B. Icard, S. Tedesco, B. Kampherbeek, G. Gross, C. Klein, H. Loeschner, E. Platzgummer, R. Morgan, S. Manakli, J. Kretz, C. Holhe, K.-H. Choi, F. Thrum, E. Kassel, W. Pilz, K. Keil, J. Butschke, M. Irmscher, F. Letzkus, P. Hudek, A. Paraskevopoulos, P. Ramm, J. Weber

Proceedings Volume 6921, 69211S (2008) https://doi.org/10.1117/12.772472

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Manufacturing, Electron beams, Electron beam lithography, Nanofabrication, Computed tomography, Prototyping, Maskless lithography

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Proceedings Article | 20 March 2008 Paper

Projection maskless lithography (PML2): proof-of-concept setup and first experimental results

C. Klein, E. Platzgummer, H. Loeschner, G. Gross, P. Dolezel, M. Tmej, V. Kolarik, W. Klingler, F. Letzkus, J. Butschke, M. Irmscher, M. Witt, W. Pilz

Proceedings Volume 6921, 69211O (2008) https://doi.org/10.1117/12.772726

KEYWORDS: Semiconducting wafers, Lithography, Electron beams, Silicon, Electrodes, Polymethylmethacrylate, Maskless lithography, Electron beam lithography, Wafer-level optics, Nanofabrication

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Proceedings Article | 1 November 2007 Paper

Resistless mask structuring using an ion multi-beam projection pattern generator

Joerg Butschke, Mathias Irmscher, Florian Letzkus, Hans Loeschner, Lorenz Nedelmann, Elmar Platzgummer

Proceedings Volume 6730, 673047 (2007) https://doi.org/10.1117/12.742797

KEYWORDS: Photomasks, Etching, Ions, Photoresist processing, Optical lithography, Electron beam lithography, Ion beams, Line edge roughness, Chemically amplified resists, Nanofabrication

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Proceedings Article | 30 October 2007 Paper

Projection maskless patterning (PMLP) for the fabrication of leading-edge complex masks and nano-imprint templates

Elmar Platzgummer, Hans Loeschner, Gerhard Gross

Proceedings Volume 6730, 673033 (2007) https://doi.org/10.1117/12.746363

KEYWORDS: Ions, Optical lithography, Argon, Ion beams, Sputter deposition, Silicon, Chromium, Electron beam lithography, Gallium arsenide, Particles

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Proceedings Article | 16 June 2005 Paper

Demonstrators: a vital step forward for projection mask-less lithography (PML2)

Christoph Brandstaetter, Ernst Haugeneder, Hans-Joachim Doering, Thomas Elster, Joachim Heinitz, Olaf Fortagne, Stefan Eder-Kapl, Gertraud Lammer, Peter Jochl, Hans Loeschner, Klaus Reimer, Juergen Saniter, Maati Talmi, Ramona Eberhardt, Klaus Kroenert

Proceedings Volume 5835, (2005) https://doi.org/10.1117/12.637298

KEYWORDS: Lithography, Semiconducting wafers, Electron beams, Free space optics, Wafer-level optics, Scintillators, Receivers, Channel projecting optics, Imaging systems, Electron beam lithography

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Proceedings Article | 6 May 2005 Paper

Proof-of-concept tool development for projection mask-less lithography (PML2)

Hans-Joachim Doering, Thomas Elster, Joachim Heinitz, Olaf Fortagne, Christoph Brandstaetter, Ernst Haugeneder, Stefan Eder-Kapl, Gertraud Lammer, Hans Loeschner, Klaus Reimer, Joerg Eichholz, Juergen Saniter

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.600458

KEYWORDS: Semiconducting wafers, Lithography, Wafer-level optics, Electronics, Free space optics, Receivers, Electron beams, Electrodes, Manufacturing, Channel projecting optics

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Proceedings Article | 20 May 2004 Paper

Projection maskless lithography

Christoph Brandstatter, Hans Loeschner, Gerhard Stengl, Gertraud Lammer, Herbert Buschbeck, Elmar Platzgummer, Hans-Joachim Doring, Thomas Elster, Olaf Fortagne

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.535412

KEYWORDS: Semiconducting wafers, Wafer-level optics, Lithography, Electron beams, Electrodes, Photomasks, Optics manufacturing, Magnetism, Stochastic processes, Monte Carlo methods

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Proceedings Article | 16 June 2003 Paper

Masked ion beam lithography and direct structuring on curved surfaces

Hans Loeschner, Herbert Buschbeck, Martin Ecker, Christoph Horner, Elmar Platzgummer, Gerhard Stengl, Michaela Zeininger, Paul Ruchhoeft, John Wolfe

Proceedings Volume 5037, (2003) https://doi.org/10.1117/12.482716

KEYWORDS: Ion beams, Ions, Photomasks, Argon, Ion beam lithography, Spherical lenses, Chromium, Prototyping, Sputter deposition, Lithography

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SPIE Journal Paper | 1 January 2003

Large-field particle beam optics for projection and proximity printing and for maskless lithography

Hans Loeschner, Gerhard Stengl, Herbert Buschbeck, A. Chalupka, Gertraud Lammer, Elmar Platzgummer, Herbert Vonach, Patrick de Jager, Rainer Kaesmaier, Albrecht Ehrmann, Stefan Hirscher, Andreas Wolter, Andreas Dietzel, Ruediger Berger, Hubert Grimm, Bruce Terris, Wilhelm Bruenger, Gerhard Gross, Olaf Fortagne, Dieter Adam, Michael Boehm, Hans Eichhorn, Reinhard Springer, Joerg Butschke, Florian Letzkus, Paul Ruchhoeft, John Wolfe

JM3, Vol. 2, Issue 01, (January 2003) https://doi.org/10.1117/12.10.1117/1.1528946

KEYWORDS: Ions, Ion beams, Photomasks, Particle beams, Photodynamic therapy, Maskless lithography, Magnetism, Lithography, Semiconducting wafers, Charged particle optics

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Proceedings Article | 16 August 2002 Paper

Ion projection lithography (IPL): posters presented at the 5th Intrnational SEMATECH Next-Generation Lithography (NGL) workshop

Rainer Kaesmaier, Hans Loeschner, Patrick de Jager, Albrecht Ehrmann, Stefan Hirscher, Karl Kragler, Reinhard Springer, Gerhard Stengl, Andreas Wolter

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479338

KEYWORDS: Semiconducting wafers, Ions, Photomasks, Ion beams, Projection lithography, Lithography, Photodynamic therapy, Electrodes, Helium, Distortion

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Proceedings Article | 16 August 2002 Paper

Measures to achieve 20nm IPL stencil mask distortion

Ernst Haugeneder, A. Chalupka, T Lammer, Hans Loeschner, Frank-Michael Kamm, Thomas Struck, Albrecht Ehrmann, Rainer Kaesmaier, Andreas Wolter, Joerg Butschke, Mathias Irmscher, Florian Letzkus, Reinhard Springer

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479353

KEYWORDS: Photomasks, Semiconducting wafers, Distortion, Silicon, Ion beams, Electrodes, Ions, Wafer bonding, Manufacturing, Projection lithography

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Proceedings Article | 1 July 2002 Paper

Large-field ion optics for projection and proximity printing and for maskless lithography (ML2)

Hans Loeschner, Gerhard Stengl, Herbert Buschbeck, A. Chalupka, Gertraud Lammer, Elmar Platzgummer, Herbert Vonach, Patrick de Jager, Rainer Kaesmaier, Albrecht Ehrmann, Stefan Hirscher, Andreas Wolter, Andreas Dietzel, Ruediger Berger, Hubert Grimm, Bruce Terris, Wilhelm Bruenger, Dieter Adam, Michael Boehm, Hans Eichhorn, Reinhard Springer, Joerg Butschke, Florian Letzkus, Paul Ruchhoeft, John Wolfe

Proceedings Volume 4688, (2002) https://doi.org/10.1117/12.472336

KEYWORDS: Ions, Magnesium, Lithography, Mendelevium, Printing, Maskless lithography, Neodymium, Nickel, Neon, Ion beams

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Proceedings Article | 20 August 2001 Paper

Ion projection lithography: advances with integrated tool and resist processes

Andreas Wolter, Rainer Kaesmaier, Hans Loeschner

Proceedings Volume 4343, (2001) https://doi.org/10.1117/12.436672

KEYWORDS: Photomasks, Semiconducting wafers, Ions, Wafer-level optics, Ion beams, Photoresist processing, Optical alignment, Electrodes, Photodynamic therapy, Projection lithography

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Proceedings Article | 22 January 2001 Paper

Ion projection lithography: new insights and results of this NGL technology

Thomas Struck, Albrecht Ehrmann, Rainer Kaesmaier, Hans Loeschner

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410700

KEYWORDS: Photomasks, Distortion, Semiconducting wafers, Ions, Projection lithography, Doping, Boron, Photodynamic therapy, Silicon, Electrodes

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Proceedings Article | 20 October 2000 Paper

Ion projection lithography: November 2000 status and sub-70-nm prospects

Rainer Kaesmaier, Andreas Wolter, Hans Loeschner, Stefan Schunck

Proceedings Volume 4226, (2000) https://doi.org/10.1117/12.404858

KEYWORDS: Ions, Photomasks, Semiconducting wafers, Projection lithography, Lithography, Photodynamic therapy, Electrodes, Ion beams, Distortion, Photoresist processing

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Proceedings Article | 21 July 2000 Paper

IPL stencil mask distortions: experimental and theoretical analysis

Albrecht Ehrmann, Thomas Struck, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390075

KEYWORDS: Photomasks, Semiconducting wafers, Etching, Silicon, Pellicles, Carbon, Ions, Projection lithography, Quartz, Manufacturing

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Proceedings Article | 21 July 2000 Paper

Stencil mask key parameter measurement and control

Albrecht Ehrmann, Annika Elsner, Roman Liebe, Thomas Struck, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Ernst Haugeneder, Hans Loeschner

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390074

KEYWORDS: Photomasks, Silicon, Carbon, Etching, Critical dimension metrology, Inspection, Semiconducting wafers, Silicon carbide, Manufacturing, Particles

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Proceedings Article | 21 July 2000 Paper

Overview of the ion projection lithography European MEDEA and international program

Rainer Kaesmaier, Hans Loeschner

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390063

KEYWORDS: Ions, Photomasks, Semiconducting wafers, Electrodes, Ion beams, Wafer-level optics, Projection lithography, Photodynamic therapy, Silicon, Distortion

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Proceedings Article | 21 July 2000 Paper

Stress engineering of SOI silicon stencil masks by boron doping concentration

Artur Degen, Jens Voigt, Martin Kratzenberg, Feng Shi, Joerg Butschke, Hans Loeschner, Rainer Kaesmaier, Albrecht Ehrmann, Ivo Rangelow

Proceedings Volume 3997, (2000) https://doi.org/10.1117/12.390076

KEYWORDS: Chemical species, Silicon, Doping, Boron, Photomasks, Diffraction, 3D modeling, Semiconducting wafers, Optical spheres, Crystals

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Proceedings Article | 3 February 2000 Paper

Improvements of the membrane bulging method for stress determination of silicon open stencil masks for ion projection lithography

Artur Degen, Jens Voigt, Eva Sossna, Feng Shi, Ivo Rangelow, Ernst Haugeneder, Hans Loeschner

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377096

KEYWORDS: Diffraction, Photomasks, Optical spheres, Ions, Spherical lenses, Silicon, Projection lithography, Beam splitters, Mirrors, Aluminum

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Proceedings Article | 3 February 2000 Paper

Layout postprocessing in ion projection lithography (IPL)

Hans Hartmann, Alex Petraschenko, Stefan Schunk, Richard Steinmetz, Ernst Haugeneder, Hans Loeschner

Proceedings Volume 3996, (2000) https://doi.org/10.1117/12.377097

KEYWORDS: Photomasks, Ions, Projection lithography, Lithography, Mask making, Image processing, Image processing software, Chemical elements, Data corrections, Wafer-level optics

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Proceedings Article | 30 December 1999 Paper

Placement measurement and FE modeling results for distortion control of stencil masks

Albrecht Ehrmann, Thomas Struck, Rainer Kaesmaier, Ernst Haugeneder, Hans Loeschner, Joerg Butschke, Florian Letzkus, Mathias Irmscher, Reinhard Springer, Roxann Engelstad

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373376

KEYWORDS: Photomasks, Semiconducting wafers, Distortion, Silicon, Etching, Electron beam lithography, Oxides, Quartz, Semiconductor lasers, Lamps

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Proceedings Article | 23 April 1999 Paper

Ion projection lithography for IC manufacturing

Albrecht Ehrmann, Rainer Kaesmaier, Hans Loeschner

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346207

KEYWORDS: Ions, Photomasks, Semiconducting wafers, Optical alignment, Ion beams, Projection lithography, Lithography, Wafer-level optics, Electrodes, Silicon

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Proceedings Article | 23 April 1999 Paper

PN and SOI wafer flow process for stencil mask fabrication

Joerg Butschke, Albrecht Ehrmann, Ernst Haugeneder, Mathias Irmscher, Rainer Kaesmaier, Karl Kragler, Florian Letzkus, Hans Loeschner, Josef Mathuni, Ivo Rangelow, Carsten Reuter, Feng Shi, Reinhard Springer

Proceedings Volume 3665, (1999) https://doi.org/10.1117/12.346224

KEYWORDS: Etching, Semiconducting wafers, Silicon, Photomasks, Oxides, Electrochemical etching, Metals, Lithography, Ions, Wafer bonding

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Proceedings Article | 18 December 1998 Paper

Stencil mask technology for ion beam lithography

Albrecht Ehrmann, Sabine Huber, Rainer Kaesmaier, Andreas Oelmann, Thomas Struck, Reinhard Springer, Joerg Butschke, Florian Letzkus, Karl Kragler, Hans Loeschner, Ivo Rangelow

Proceedings Volume 3546, (1998) https://doi.org/10.1117/12.332827

KEYWORDS: Photomasks, Semiconducting wafers, Silicon, Ions, Etching, Carbon, Control systems, Ion beam lithography, Lithography, Inspection

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Proceedings Article | 8 December 1995 Paper

Advances in stencil mask technology: control of distortion in ion-projection lithography masks

John Wolfe, Alex Shimkunas, John Melngailis, Hans Loeschner, Robert Mohondro, John Randall

Proceedings Volume 2621, (1995) https://doi.org/10.1117/12.228175

KEYWORDS: Photomasks, Distortion, Silicon, Ions, Lithography, Spatial frequencies, Picosecond phenomena, Modulation, Aluminum, Projection lithography

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Proceedings Article | 13 May 1994 Paper

Ion projection: the successor to optical lithography

Hans Loeschne, Gerhard Stengl, Ivan Berry, John Randall, John Wolfe, Walter Finkelstein, Robert Hill, John Melngailis, Lloyd Harriott, Wilhelm Bruenger, L. Buchmann

Proceedings Volume 2194, (1994) https://doi.org/10.1117/12.175827

KEYWORDS: Ions, Semiconducting wafers, Photomasks, Lithography, Distortion, Projection systems, Wafer-level optics, Ion beams, Optical lithography, Projection lithography

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Proceedings Article | 1 May 1990 Paper

Advances in mask fabrication and alignment for masked ion-beam lithography

David Stumbo, George Damm, D. Engler, F. Fong, S. Sen, John Wolfe, John Randall, Phillip Mauger, Alex Shimkunas, Hans Loeschne

Proceedings Volume 1263, (1990) https://doi.org/10.1117/12.20143

KEYWORDS: Photomasks, Silicon, Optical alignment, Distortion, Ion beams, Ions, X-ray technology, Printing, Luminescence, Etching

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Showing 5 of 61 publications

Conference Committee Involvement (29)

39th European Mask and Lithography Conference (EMLC 2024)

17 June 2024 | Grenoble, France

Novel Patterning Technologies 2024

26 February 2024 | San Jose, California, United States

38th European Mask and Lithography Conference

19 June 2023 | Dresden, Germany

Novel Patterning Technologies 2023

27 February 2023 | San Jose, California, United States

Novel Patterning Technologies 2022

25 April 2022 | San Jose, California, United States

Novel Patterning Technologies 2021

22 February 2021 | Online Only, California, United States

36th European Mask and Lithography Conference

22 June 2020 | Leuven, Belgium

Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2020

24 February 2020 | San Jose, California, United States

35th European Mask and Lithography Conference (EMLC 2019)

17 June 2019 | Dresden, Germany

Novel Patterning Technologies for Semiconductors, MEMS/NEMS and MOEMS 2019

25 February 2019 | San Jose, California, United States

34th European Mask and Lithography Conference

18 June 2018 | Grenoble, France

Novel Patterning Technologies 2018

26 February 2018 | San Jose, California, United States

33rd European Mask and Lithography Conference

26 June 2017 | Dresden, Germany

Emerging Patterning Technologies 2017

27 February 2017 | San Jose, California, United States

Alternative Lithographic Technologies VIII

22 February 2016 | San Jose, California, United States

Alternative Lithographic Technologies VII

23 February 2015 | San Jose, California, United States

Alternative Lithographic Technologies VI

24 February 2014 | San Jose, California, United States

Alternative Lithographic Technologies V

25 February 2013 | San Jose, California, United States

Alternative Lithographic Technologies IV

13 February 2012 | San Jose, California, United States

Alternative Lithographic Technologies III

1 March 2011 | San Jose, California, United States

Alternative Lithographic Technologies II

23 February 2010 | San Jose, California, United States

Alternative Lithographic Technologies

24 February 2009 | San Jose, California, United States

Emerging Lithographic Technologies XII

26 February 2008 | San Jose, California, United States

BioMEMS and Nanotechnology III

5 December 2007 | Canberra, ACT, Australia

Emerging Lithographic Technologies XI

27 February 2007 | San Jose, California, United States

Emerging Lithographic Technologies X

21 February 2006 | San Jose, California, United States

Emerging Lithographic Technologies IX

1 March 2005 | San Jose, California, United States

Emerging Lithographic Technologies VIII

24 February 2004 | Santa Clara, California, United States

Emerging Lithographic Technologies VII

25 February 2003 | Santa Clara, California, United States

Showing 5 of 29 Conference Committees

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