Recently, ZnO-based semiconductors have been deposited on various substrates using various methods. Furthermore,
they were used in ultraviolet light-emitting diodes (UVLEDs) due to inherent properties including wide direct bandgap
and high binding energy. In this work, two different deposition systems were utilized to deposit the ZnO-based films.
The resulted films were applied to fabricate the ZnO-based UVLEDs. Firstly, the high quality i-ZnO films were
deposited as the active layer by using the vapor cooling condensation system to enhance the internal quantum efficiency.
Secondly, the double-heterostructured MgZnO/ZnO/MgZnO layers were deposited as the active layer at low temperature
using the vapor cooling condensation system to enhance light intensity. Furthermore, various component ratios of i-
MgZnO and i-MgBeZnO films were deposited using a radio frequency (RF) magnetron co-sputter system. Consequently,
the deposited films with various energy bandgaps were stacked alternately to form the active layer of multiple-quantum
well (MQW) UVLEDs. The light emitting intensity of MQW UVLEDs was better than that of the traditional p-i-n
UVLEDs. This phenomenon was attributed to the carrier confinement in well layers and improvement probability of