This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.
We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p- GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.
Modeling and characteristic of the SMT Board Plug connector, which is used to connect micro optical transceiver to the main board, are proposed and analyzed in this paper. When the high speed signal transfers from the PCB of transceiver to main board through SMT Board Plug connector, the structure and material discontinuity of the connector causes insertion losses and impedance mismatches. This makes the performance of high speed digital system exacerbated. So it is essential to analyze the signal transfer characteristics of the connector and find out what factors affected the signal quality at the design stage of the digital system. To solve this problem, Ansoft's High Frequency Structure Simulator (HFSS), based on the finite element method, was employed to build accurate 3D models, analyze the effects of various structure parameters, and obtain the full-wave characteristics of the SMT Board Plug connectors in this paper. Then an equivalent circuit model was developed. The circuit parameters were extracted precisely in the frequency range of interests by using the curve fitting method in ADS software, and the result was in good agreement with HFSS simulations up to 8GHz with different structure parameters. At last, the measurement results of S-parameter and eye diagram were given and the S-parameters showed good coincidence between the measurement and HFSS simulation up to 4GHz.