CONFERENCE PROCEEDINGS
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Heng Li
at National Yang Ming Chiao Tung Univ.
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Publications (4)
Proceedings Article | 14 February 2018 Paper
High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells
Proceedings Volume 10554, 105540J (2018) https://doi.org/10.1117/12.2289389
KEYWORDS: Light emitting diodes, Quantum wells, Quantum efficiency, Ultraviolet radiation, Near ultraviolet, Gallium, Internal quantum efficiency, Nitrogen, Gallium nitride
Proceedings Article | 8 March 2016 Paper
Significant improvement of GaN crystal quality with ex-situ sputtered AlN nucleation layers
Shuo-Wei Chen, Young Yang, Wei-Chih Wen, Heng Li, Tien-Chang Lu
Proceedings Volume 9768, 97681D (2016) https://doi.org/10.1117/12.2211721
KEYWORDS: Aluminum nitride, Crystals, Transmission electron microscopy, Internal quantum efficiency, Quantum wells, Sapphire, Sputter deposition, Light emitting diodes, Gallium nitride, Electro optics, Raman spectroscopy, Epitaxy, X-rays, Statistical analysis
Proceedings Article | 8 March 2016 Paper
3D structural construction of GaN-based light-emitting diode by confocal micro-Raman spectroscopy
Heng Li, Chiao-Yun Chang, Hui-Yu Cheng, Wei-Liang Chen, Yi-Hsin Huang, Tien-Chang Lu, Yu-Ming Chang
Proceedings Volume 9768, 976813 (2016) https://doi.org/10.1117/12.2208856
KEYWORDS: Light emitting diodes, Raman spectroscopy, Confocal microscopy, Cones, Micro raman spectroscopy, Quantum wells, Sapphire, Polarization, LED lighting, Solid state lighting, Gallium nitride, Phonons, Optoelectronic devices, Imaging spectroscopy, Luminescence
Proceedings Article | 13 March 2015 Paper
Study of efficiency droop in InGaN/GaN light emitting diodes with V-shape pits
Chiao-Yun Chang, Heng Li, Tien-Chang Lu
Proceedings Volume 9363, 93631Q (2015) https://doi.org/10.1117/12.2078122
KEYWORDS: Laser sintering, Indium gallium nitride, Quantum wells, Light emitting diodes, Quantum efficiency, Gallium nitride, Superlattices, Sapphire, Scanning electron microscopy, Internal quantum efficiency
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