Prof. Henryk Turski Profile

Prof. Henryk Turski

at Institute of High Pressure Physics

SPIE Involvement:

Author

Publications (9)

Proceedings Article | 9 March 2024 Presentation

Influence of InGaN underlayer on efficiency of LEDs grown by plasma-assisted molecular beam epitaxy

Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Mikolaj Zak, Krzysztof Golyga, Anna Feduniewicz-Zmuda, Henryk Turski, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC1288619 (2024) https://doi.org/10.1117/12.3002699

KEYWORDS: Light emitting diodes, Indium gallium nitride, Molecular beam epitaxy, Quantum wells, Gallium nitride, Vapor phase epitaxy, Quantum physics, Internal quantum efficiency, Indium

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Proceedings Article | 9 March 2024 Presentation

Fabrication method of GaN-air channels for embedded photonic structures

Marta Sawicka, Greg Muziol, Oliwia Golyga, Natalia Fiuczek, Anna Feduniewicz-Zmuda, Marcin Siekacz, Henryk Turski, Kacper Sierakowski, Tomasz Sochacki, Mateusz Słowikowski, Igor Prozheev, Filip Tuomisto, Czeslaw Skierbiszewski

Proceedings Volume PC12886, PC128860X (2024) https://doi.org/10.1117/12.3001341

KEYWORDS: Fabrication, Refractive index, Electrochemical etching, Diffraction gratings, Silicon, Ion channels, Gallium nitride, Annealing, Semiconductor lasers, Optical lithography

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Proceedings Article | 21 March 2023 Presentation

Properties of III-nitride wide quantum wells and their application to optoelectronic devices

Greg Muziol, Mateusz Hajdel, Marcin Siekacz, Henryk Turski, Tadek Suski, Witold Trzeciakowski, Czeslaw Skierbiszewski

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2650094

KEYWORDS: Quantum wells, Optoelectronic devices, Physics, Indium gallium nitride, Semiconductors, Semiconductor lasers, Photonics, Optoelectronics, Light emitting diodes

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Proceedings Article | 14 March 2023 Presentation

Tunnel junctions for new architecture of III-N devices (Conference Presentation)

Czeslaw Skierbiszewski, Grzegorz Muzioł, Henryk Turski, Marcin Siekacz, Julia Slawinska, Mikolaj Chlipala, Mikolaj Zak

Proceedings Volume PC12441, PC124410J (2023) https://doi.org/10.1117/12.2649797

KEYWORDS: Light emitting diodes, Hydrogen, Wavelength tuning, Vapor phase epitaxy, Semiconductor lasers, Resistance, Polishing, Plasma, Molecular beam epitaxy, Magnesium

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Proceedings Article | 9 March 2022 Presentation

Next-generation of III-nitride light emitters based on buried tunnel junction design

Henryk Turski, Mikolaj Chlipala, Marcin Siekacz, Grzegorz Muziol, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Len van Deurzen, Huili Xing, Debdeep Jena, Czeslaw Skierbiszewski

Proceedings Volume PC12022, PC120220G (2022) https://doi.org/10.1117/12.2608281

KEYWORDS: Solid state electronics, Polarization, Lead, Heterojunctions, Gallium nitride, Electrons

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Proceedings Article | 5 March 2021 Presentation + Paper

Enhanced efficiency in bottom tunnel junction InGaN blue LEDs

Len van Deurzen, Shyam Bharadwaj, Kevin Lee, Vladimir Protasenko, Henryk Turski, Huili (Grace) Xing, Debdeep Jena

Proceedings Volume 11706, 117060F (2021) https://doi.org/10.1117/12.2582439

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Proceedings Article | 16 February 2020 Presentation + Paper

Monolithically p-down nitride laser diodes and LEDs obtained by MBE using buried tunnel junction design

Henryk Turski, Shyam Bharadwaj, Marcin Siekacz, Grzegorz Muziol, Mikolaj Chlipala, Mikolaj Zak, Mateusz Hajdel, Krzesimir Nowakowski-Szkudlarek, Szymon Stanczyk, Huili Xing, Debdeep Jena, Czeslaw Skierbiszewski

Proceedings Volume 11280, 1128010 (2020) https://doi.org/10.1117/12.2548996

KEYWORDS: Light emitting diodes, Gallium nitride, Semiconductor lasers, Continuous wave operation, Quantum wells, Indium gallium nitride, Molecular beam epitaxy

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Proceedings Article | 27 March 2013 Paper

Role of nonequivalent atomic step edges in the growth of InGaN by plasma-assisted molecular beam epitaxy

Henryk Turski, Marcin Siekacz, Marta Sawicka, Zbig Wasilewski, Sylwester Porowski, Czesław Skierbiszewski

Proceedings Volume 8625, 862527 (2013) https://doi.org/10.1117/12.2003850

KEYWORDS: Indium, Indium gallium nitride, Nitrogen, Gallium, Chemical species, Gallium nitride, Crystals, Indium nitride, Molecular beam epitaxy, Diffusion

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Proceedings Article | 4 March 2013 Paper

True-blue nitride laser diodes grown by plasma assisted MBE on low dislocation density GaN substrates

Henryk Turski, Marcin Siekacz, Grzegorz Muzioł, Marta Sawicka, Szymon Grzanka, Piotr Perlin, Tadeusz Suski, Zbig Wasilewski, Izabella Grzegory, Sylwester Porowski, Czeslaw Skierbiszewski

Proceedings Volume 8625, 862512 (2013) https://doi.org/10.1117/12.2001997

KEYWORDS: Gallium nitride, Indium gallium nitride, Semiconductor lasers, Plasma, Waveguides, Quantum wells, Cladding, Nitrogen, Diodes

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Showing 5 of 9 publications

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