Prof. Hideki Hirayama Profile

Prof. Hideki Hirayama

Chief Scientist at RIKEN

SPIE Involvement:

Conference Program Committee | Author

Publications (11)

PROCEEDINGS ARTICLE | April 19, 2017

Over 10% EQE AlGaN deep-UV LED using transparent p-AlGaN contact layer (Conference Presentation)

Proc. SPIE. 10104, Gallium Nitride Materials and Devices XII

KEYWORDS: Quantum wells, Transparency, Light emitting diodes, External quantum efficiency, Deep ultraviolet, Electrodes, Reflectivity, Gallium nitride, Current controlled current source

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PROCEEDINGS ARTICLE | August 31, 2015

Recent progress of THz-quantum cascade lasers using nitride-based materials

Proc. SPIE. 9585, Terahertz Emitters, Receivers, and Applications VI

KEYWORDS: Semiconductors, Quantum wells, Waveguides, Metals, Quantum cascade lasers, Gallium nitride, Sapphire, Terahertz radiation, Phonons, Metalorganic chemical vapor deposition

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PROCEEDINGS ARTICLE | May 13, 2015

GaN-based terahertz quantum cascade lasers

Proc. SPIE. 9483, Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense

KEYWORDS: Semiconductors, FT-IR spectroscopy, Quantum wells, Quantum cascade lasers, Gallium nitride, Sapphire, Terahertz radiation, Phonons, Metalorganic chemical vapor deposition, Laser systems engineering

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PROCEEDINGS ARTICLE | March 10, 2015

Recent progress and future prospects of THz quantum-cascade lasers

Proc. SPIE. 9382, Novel In-Plane Semiconductor Lasers XIV

KEYWORDS: Semiconductors, Waveguides, Scattering, Metals, Gallium arsenide, Quantum cascade lasers, Gallium nitride, Terahertz radiation, Aluminum nitride, Phonons

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PROCEEDINGS ARTICLE | January 31, 2014

Recent progress toward realizing GaN-based THz quantum cascade laser

Proc. SPIE. 8993, Quantum Sensing and Nanophotonic Devices XI

KEYWORDS: Semiconductors, Surgery, Scattering, Gallium arsenide, Quantum cascade lasers, Electroluminescence, Gallium nitride, Sapphire, Terahertz radiation, Phonons

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PROCEEDINGS ARTICLE | March 27, 2013

Development of 260 nm band deep-ultraviolet light emitting diodes on Si substrates

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Microscopes, Light emitting diodes, External quantum efficiency, Deep ultraviolet, Silicon, Electroluminescence, Scanning electron microscopy, Sapphire, Aluminum nitride, Epitaxial lateral overgrowth

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PROCEEDINGS ARTICLE | March 27, 2013

Intersubband spontaneous emission from GaN-based THz quantum cascade laser

Proc. SPIE. 8625, Gallium Nitride Materials and Devices VIII

KEYWORDS: Fabrication, Semiconductors, Polarization, Scattering, Electrons, Quantum cascade lasers, Electroluminescence, Gallium nitride, Terahertz radiation, Phonons

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PROCEEDINGS ARTICLE | January 7, 2011

Advances of AlGaN-based high-efficiency deep-UV LEDs

Proc. SPIE. 7987, Optoelectronic Materials and Devices V

KEYWORDS: Electron beam lithography, Quantum wells, Light emitting diodes, External quantum efficiency, Deep ultraviolet, Electrodes, Ultraviolet radiation, Sapphire, Aluminum nitride

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PROCEEDINGS ARTICLE | February 12, 2010

Recent progress of 220-280 nm-band AlGaN based deep-UV LEDs

Proc. SPIE. 7617, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIV

KEYWORDS: Quantum wells, Continuous wave operation, Light emitting diodes, External quantum efficiency, Deep ultraviolet, Ultraviolet radiation, Sapphire, Aluminum, Aluminum nitride

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PROCEEDINGS ARTICLE | February 16, 2009

222-282 nm AlGaN and InAlGaN based deep-UV LEDs fabricated on high-quality AlN template

Proc. SPIE. 7216, Gallium Nitride Materials and Devices IV

KEYWORDS: Quantum wells, Continuous wave operation, Light emitting diodes, External quantum efficiency, Deep ultraviolet, Ultraviolet radiation, Electroluminescence, Sapphire, Aluminum nitride

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PROCEEDINGS ARTICLE | July 6, 2004

Quaternary InAlGaN-based deep-UV LED with high-Al-content p-type AlGaN

Proc. SPIE. 5359, Quantum Sensing and Nanophotonic Devices

KEYWORDS: Quantum wells, Light emitting diodes, Deep ultraviolet, Ultraviolet radiation, Sapphire, Aluminum, Indium gallium nitride, Silicon carbide, Gallium, Internal quantum efficiency

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