A 157 nm F2 laser was used for the surface and interface modifications of Al thin films on silica glass substrate for
fabricating a pattern of Al thin films. The F2-laser irradiated surface swelled remarkably by inducing the strong oxidation
reaction of Al thin films to form Al2O3 protective layer. High adhesion strength of 663 kgf/cm2 between Al and silica
glass was also obtained for the F2-laser-irradiated sample, compared with the cases in the ArF-laser irradiated, fourth
harmonic of Nd:YAG-laser irradiated and nonirradiated samples of 326, 19 and 16 kgf/cm2, respectively. Thus, the F2-
laser irradiated sample showed high abrasion resistance for embossing a fine pattern of Al thin films on silica glass.
Mechanism of the F2-laser-induced surface and interface modifications was discussed, comparing with the cases in the
ArF laser and fourth harmonic of Nd:YAG laser.
Silicone-coated polycarbonate (PC) through an acrylic primer was photochemically modified into silica (SiO2) by 157
nm F2 laser. The photomodified surface showed high scratch resistance comparable to the case in a bulk silica.
Corresponding to the conversion of silicone into silica on PC, the photomodified surface was found to be shrunk,
measured by a surface profilometer. For instance, the coated silicone on PC reduced the thickness of approximately 15 %
when the F2 laser modified silicone into silica 0.59 μin thickness. An excess irradiation of F2 laser for the
photochemical modification induced the degradation of acrylic primer underneath silicone.