Prof. Hieu Pham Trung Nguyen Profile

Prof. Hieu Pham Trung Nguyen

Associate Professor at New Jersey Institute of Technology

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Publications (11)

Proceedings Article | 17 March 2023 Presentation

Engineering the light extraction efficiency of AlInN nanowire ultraviolet light-emitting diodes with surface passivation and photonic crystal structures

Hieu Pham Trung Nguyen, Ravi Teja Velpula, Barsha Jain, Moulik Patel, Andressa Marangon

Proceedings Volume PC12430, PC1243003 (2023) https://doi.org/10.1117/12.2648003

KEYWORDS: Nanowires, Ultraviolet light emitting diodes, Photonic crystals, Light emitting diodes, Ultraviolet radiation, Structural engineering, Deep ultraviolet, Visible radiation, Silica, Semiconductors

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Proceedings Article | 15 March 2023 Presentation + Paper

Advantages of concave quantum barriers in AlGaN deep ultraviolet light-emitting diodes

Barsha Jain, Mano Bala Sankar Muthu, Ravi Teja Velpula, Ngoc Thi Ai Nguyen, Hieu Pham Trung Nguyen

Proceedings Volume 12421, 124210K (2023) https://doi.org/10.1117/12.2650411

KEYWORDS: Light emitting diodes, Aluminum gallium nitride, Quantum wells, Deep ultraviolet, Ultraviolet light emitting diodes, Conduction bands, Quantum efficiency

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Proceedings Article | 3 August 2021 Presentation

Molecular beam epitaxial growth of high efficiency AlInN nanowire ultraviolet light-emitting diodes

Hieu Pham Trung Nguyen, Barsha Jain, Ravi Teja Velpula, Moulik Patel

Proceedings Volume 11800, 118000P (2021) https://doi.org/10.1117/12.2603389

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Proceedings Article | 5 March 2021 Presentation + Paper

High performance electron blocking layer free ultraviolet light-emitting diodes

Barsha Jain, Ravi Teja Velpula, Moulik Patel, Hieu P. Nguyen

Proceedings Volume 11680, 1168012 (2021) https://doi.org/10.1117/12.2578869

KEYWORDS: Internal quantum efficiency, Quantum efficiency, Mercury, Light emitting diodes, Lamps, Cladding, Ultraviolet light emitting diodes, Electron beam lithography, Deep ultraviolet, Quantum wells

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Proceedings Article | 15 March 2018 Paper

Phosphor-free III-nitride nanowire white-light-emitting diodes for visible light communication

Moab Rajan Philip, Thang Ha Quoc Bui, Mehrdad Djavid, Md Nasiruddin Bhuyian, Phuoc Vu, Hieu Pham Trung Nguyen

Proceedings Volume 10595, 105953I (2018) https://doi.org/10.1117/12.2303543

KEYWORDS: Light emitting diodes, Nanowires

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SPIE Journal Paper | 13 February 2018

Induced high-order resonance linewidth shrinking with multiple coupled resonators in silicon-organic hybrid slotted two-dimensional photonic crystals for reduced optical switching power in bistable devices

Thu Trang Hoang, Quang Minh Ngo, Dinh Lam Vu, Khai Quang Le, Truong Khang Nguyen, Hieu Pham Trung Nguyen

JNP, Vol. 12, Issue 01, 016014, (February 2018) https://doi.org/10.1117/12.10.1117/1.JNP.12.016014

KEYWORDS: Resonators, Waveguides, Switching, Silicon, Phase shifts, Finite-difference time-domain method, Nonlinear optics, Photonic crystals, Optical switching, Refractive index

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Shrinking the linewidth of resonances induced by multiple coupled resonators is comprehensively analyzed using the coupled-mode theory (CMT) in time. Two types of coupled resonators under investigation are coupled resonator optical waveguides (CROWs) and side-coupled resonators with waveguide (SCREW). We examine the main parameters influencing on the spectral response such as the number of resonators (n) and the phase shift (φ) between two adjacent resonators. For the CROWs geometry consisting of n coupled resonators, we observe the quality (Q) factor of the right- and left-most resonant lineshapes increases n times larger than that of a single resonator. For the SCREW geometry, relying on the phase shift, sharp, and asymmetric resonant lineshape of the high Q factor a narrow linewidth of the spectral response could be achieved. We employ the finite-difference time-domain (FDTD) method to design and simulate two proposed resonators for practical applications. The proposed coupled resonators in silicon-on-insulator (SOI) slotted two-dimensional (2-D) photonic crystals (PhCs) filled and covered with a low refractive index organic material. Slotted PhC waveguides and cavities are designed to enhance the electromagnetic intensity and to confine the light into small cross-sectional area with low refractive index so that efficient optical devices could be achieved. A good agreement between the theoretical CMT analysis and the FDTD simulation is shown as an evidence for our accurate investigation. All-optical switches based on the CROWs in the SOI slotted 2-D PhC waveguide that are filled and covered by a nonlinear organic cladding to overcome the limitations of its well-known intrinsic properties are also presented. From the calculations, we introduce a dependency of the normalized linewidth of the right-most resonance and its switching power of the all-optical switches on number of resonator, n. This result might provide a guideline for all-optical signal processing on a silicon PhC chip design.

Proceedings Article | 26 February 2016 Paper

Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire

Renjie Wang, Yong-Ho Ra, Yuanpeng Wu, Songrui Zhao, Hieu P. T. Nguyen, Ishiang Shih, Zetian Mi

Proceedings Volume 9748, 97481S (2016) https://doi.org/10.1117/12.2213741

KEYWORDS: Nanowires, Light emitting diodes, Silicon, RGB color model, Sapphire, Indium gallium nitride, Semiconducting wafers, Quantum dot light emitting diodes, Gallium, Chemical species

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Proceedings Article | 9 March 2015 Paper

High-power phosphor-free InGaN/AlGaN dot-in-a-wire core-shell white light-emitting diodes

Hieu Nguyen, Mehrdad Djavid, Steffi Woo, Xianhe Liu, Qi Wang, Gianluigi Botton, Zetian Mi

Proceedings Volume 9383, 938307 (2015) https://doi.org/10.1117/12.2084777

KEYWORDS: Light emitting diodes, Heterojunctions, Quantum dots, Luminescence, External quantum efficiency, Gallium nitride, Silicon, Indium gallium nitride, Quantum wells, Nanowires

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Proceedings Article | 27 February 2014 Paper

Phosphor-free InGaN/GaN/AlGaN core-shell dot-in-a-wire white light-emitting diodes

Zetian Mi, Hieu Nguyen, Shaofei Zhang, Ashfiqua Connie, Md Kibria, Qi Wang, Ishiang Shih

Proceedings Volume 9003, 900306 (2014) https://doi.org/10.1117/12.2041284

KEYWORDS: Light emitting diodes, Quantum wells, Indium gallium nitride, Quantum efficiency, Silicon, Heterojunctions, Gallium nitride, Lithium, Luminescence, Nanowires

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Proceedings Article | 29 March 2013 Paper

Molecular beam epitaxial growth and characterization of InGaN/GaN dot-in-a-wire nanoscale heterostructures: toward ultrahigh efficiency phosphor-free white light emitting diodes

Zetian Mi, Hieu Pham Trung Nguyen, Shaofei Zhang, Kai Cui, Mehrdad Djavid

Proceedings Volume 8634, 86340B (2013) https://doi.org/10.1117/12.2004498

KEYWORDS: Light emitting diodes, Heterojunctions, Internal quantum efficiency, External quantum efficiency, Quantum efficiency, Molecular beams, Gallium nitride, Quantum dots, Solid state lighting, Nanowires

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Proceedings Article | 16 November 2010 Paper

Prospects and challenges of InN-based nanowire heterostructures and devices integrated on Si

Z. Mi, H. Nguyen, K. Cui, X. Han, S. Zhang, Y.-L. Chang

Proceedings Volume 7847, 784702 (2010) https://doi.org/10.1117/12.870760

KEYWORDS: Indium nitride, Heterojunctions, Solar cells, Light emitting diodes, Silicon, Luminescence, Molecular beams, Indium gallium nitride, Nitrogen, Nanowires

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Showing 5 of 11 publications

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