Nanocrystalline cubic silicon carbide (nc-3C-SiC) films are deposited using hot wire chemical vapour deposition
technique at ~350 °C on glass substrates using SiH4 /CH4/H2 as precursor gases. We investigated the influence of total
gas pressure on the structural, optical and transport properties of nc-3C-SiC films. Raman scattering spectra and X-ray
diffraction patterns revealed that the film prepared below 2 mbar is nanocrustalline silicon (nc-Si), while at ≥ 2 mbar
films are nc-3C-SiC. We achieved high deposition rate (≥ 14-20 nm/min), high optical band gap (3.2-3.4 eV) and high
conductivity (~ 10-4 -10-2 Ω-1cm-1) suitable for window layer for Solar cells.
Two dimensional carbon nanostructures (carbon nanosheets) are fabricated using Hot Wire Chemical Vapor Deposition
(HWCVD) technique assisted by H radical injection, using CH4 as source gas. Carbon nanosheets are grown on
crystalline Si(100) wafer as well as on corning glass substrate without using catalyst. The grown carbon nanosheets are
aligned vertically on the substrate with thickness in the range of 10-20 nm and about 60-80 nm in height.