Mr. Hironori Nishino Profile

Hironori Nishino

at Fujitsu Labs Ltd

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Author

Publications (14)

Proceedings Article | 12 April 2021 Paper

Dual-band response in Type-II superlattice infrared photodetectors with a modified pBp design

R. Suzuki, K. Ozaki, Y. Matsumiya, Y. Yamazaki, K. Tsunoda, H. Nishino

Proceedings Volume 11741, 117410P (2021) https://doi.org/10.1117/12.2586042

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Proceedings Article | 7 May 2019 Paper

ALD-Al2O3 passivation effects on surface characteristics of InAs/GaSb type-II superlattice infrared photodetectors

R. Suzuki, K. Ozaki, K. Tsunoda, H. Nishino

Proceedings Volume 11002, 110020B (2019) https://doi.org/10.1117/12.2518574

KEYWORDS: Aluminum, Antimony, Gallium, Infrared photography, Infrared radiation, Atomic layer deposition, Indium arsenide

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Proceedings Article | 7 May 2009 Paper

Development history of HgCdTe infrared detectors in Japan

Hironori Nishino, Naoki Oda

Proceedings Volume 7298, 72982X (2009) https://doi.org/10.1117/12.817404

KEYWORDS: Mercury cadmium telluride, Diodes, Silicon, Gallium arsenide, Photodiodes, Liquid phase epitaxy, Mercury, Crystals, Annealing, Semiconducting wafers

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Proceedings Article | 7 May 2009 Paper

High-performance 256 x 256 pixel LWIR QDIP

M. Nagashima, M. Kibe, Mi. Doshida, H. Yamashita, R. Suzuki, Y. Uchiyama, Y. Matsukura, H. Nishino, T. Fujii, S. Miyazaki

Proceedings Volume 7298, 72980D (2009) https://doi.org/10.1117/12.822892

KEYWORDS: Long wavelength infrared, Quantum well infrared photodetectors, Quantum efficiency, Thermography, Indium arsenide, Quantum dots, Gallium arsenide, Staring arrays, Infrared radiation, Electronics

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Proceedings Article | 31 May 2005 Paper

Development of mid-wavelength QWIP FPA

Kazuo Ozaki, Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Nobuyuki Kajihara, Toshio Fujii

Proceedings Volume 5783, (2005) https://doi.org/10.1117/12.603350

KEYWORDS: Quantum well infrared photodetectors, Doping, Staring arrays, Indium gallium arsenide, Absorption, Integrated optics, Medium wave, Quantum wells, Gallium arsenide, Aluminum

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Proceedings Article | 30 August 2004 Paper

Characterization of photocurrent of mid-wavelength quantum-well infrared photodetector (MW-QWIP)

Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Kazuo Ozaki, Toshio Fujii

Proceedings Volume 5406, (2004) https://doi.org/10.1117/12.542964

KEYWORDS: Absorption, Quantum well infrared photodetectors, Indium gallium arsenide, Gallium arsenide, Quantum wells, Infrared radiation, Aluminum, Indium, Temperature metrology, Statistical analysis

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Proceedings Article | 23 January 2003 Paper

Effect of diffusion-barrier insertion into the reflector electrode on QWIP device characteristics

Yusuke Matsukura, Hironori Nishino, Toshio Fujii

Proceedings Volume 4820, (2003) https://doi.org/10.1117/12.451009

KEYWORDS: Reflectors, Electrodes, Quantum well infrared photodetectors, Reflectivity, Gold, Infrared technology, Laser Doppler velocimetry, Diffusion, Ions, Mass spectrometry

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Proceedings Article | 5 August 2002 Paper

Characterization of the dark current of a quantum well infrared photodetector (QWIP) with selectively doped barrier layers

Yasuhito Uchiyama, Hironori Nishino, Yusuke Matsukura, Tetsuya Miyatake, Kousaku Yamamoto, Toshio Fujii

Proceedings Volume 4721, (2002) https://doi.org/10.1117/12.478844

KEYWORDS: Quantum well infrared photodetectors, Doping, Thermal modeling, Silicon, Modulation, Electrons, Interfaces, Quantum wells, Statistical modeling, Data modeling

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Proceedings Article | 10 October 2001 Paper

Quantum well infrared photodetectors (QWIP) with selectively regrown N-GaAs plugs

Yusuke Matsukura, Hironori Nishino, Hitoshi Tanaka, Toshio Fujii

Proceedings Volume 4369, (2001) https://doi.org/10.1117/12.445310

KEYWORDS: Quantum well infrared photodetectors, Gallium arsenide, Scanning electron microscopy, Fabrication, Semiconducting wafers, Staring arrays, Metalorganic chemical vapor deposition, Quantum wells, Electrodes, Dry etching

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Proceedings Article | 17 July 2000 Paper

Absorption spectrum observation of quantum well infrared photodetectors by new prism attached attenuated total reflection

Hironori Nishino, Prafulla Masalkar, Yusuke Matsukura, Hitoshi Tanaka, Yoshihiro Miyamoto, Toshio Fujii

Proceedings Volume 4028, (2000) https://doi.org/10.1117/12.391738

KEYWORDS: Absorption, Quantum well infrared photodetectors, Prisms, Quantum wells, Semiconducting wafers, Reflection, Wafer-level optics, Gallium arsenide, Interfaces, Polarization

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Proceedings Article | 28 December 1999 Paper

Temperature dependence of quantum well infrared photodetector focal plane array characteristics

Yoichiro Sakachi, Hironori Nishino, Prafulla Masalkar, Yoshihiro Miyamoto, Toshio Fujii

Proceedings Volume 3870, (1999) https://doi.org/10.1117/12.373184

KEYWORDS: Quantum well infrared photodetectors, Capacitors, Interference (communication), Staring arrays, Circuit switching, Readout integrated circuits, Temperature metrology, Solids, Thulium, Transistors

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Proceedings Article | 6 August 1999 Paper

Simulation of optical coupling in quantum well infrared photodetectors

Prafulla Masalkar, Hironori Nishino, Kousaku Yamamoto, Yoshihiro Miyamoto, Toshio Fujii

Proceedings Volume 3625, (1999) https://doi.org/10.1117/12.356915

KEYWORDS: Absorption, Quantum well infrared photodetectors, Diffraction gratings, Spatial frequencies, Optical simulations, Gallium arsenide, Quantum optics, Staring arrays, Etching, Diffraction

Proceedings Article | 26 July 1999 Paper

Sensitivity enhancement of quantum well infrared photodetectors with a pseudorandom optical coupler by confinement of internal multireflection

Hironori Nishino, Prafulla Masalkar, Yoichiro Sakachi, Yusuke Matsukura, Hitoshi Tanaka, Kousaku Yamamoto, Yoshihiro Miyamoto, Toshio Fujii

Proceedings Volume 3698, (1999) https://doi.org/10.1117/12.354560

KEYWORDS: Quantum well infrared photodetectors, Thermography, Gallium arsenide, Staring arrays, Absorption, Reflection, Readout integrated circuits, Infrared imaging, Black bodies, Quantum wells

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Proceedings Article | 27 June 1996 Paper

Direct MOVPE growth of HgCdTe on Si substrates for long-wavelength infrared photodiodes

Kenji Maruyama, Hiroji Ebe, Hironori Nishino, T. Okamoto, S. Murakami, Tamio Saito, Y. Nishijima, Hideo Wada, Mitsuhiro Nagashima, Yashiroh Nogami, Kunihiro Tanikawa, Hiromichi Shirahata

Proceedings Volume 2744, (1996) https://doi.org/10.1117/12.243468

KEYWORDS: Silicon, Photodiodes, Mercury cadmium telluride, Tellurium, Adsorption, Semiconducting wafers, Annealing, Long wavelength infrared, Liquid phase epitaxy, Crystals

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Showing 5 of 14 publications

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