Prof. Hiroshi Fujioka
Professor at Institute of Industrial Science Univ of Tokyo
SPIE Involvement:
Conference Chair | Conference Co-Chair | Conference Program Committee | Editor
Profile Summary

Hiroshi Fujioka received the B.S. degree in industrial chemistry from the University of Tokyo, Japan, in 1984. He received the M.S. and Ph.D. degrees in materials science and mineral engineering from University of California, Berkeley, in 1993 and 1995 respectively. His Ph.D. dissertation dealt with molecular beam epitaxial (MBE) growth and application of low temperature GaAs.
He had been working for Fujitsu Limited as a semiconductor engineer from 1984. In 1996, he joined the University of Tokyo and he has been a professor of Institute of Industrial Science from 2004. His research interests are in the areas of PLD and sputtering growth of III-V semiconductors and their heterostructures for high-speed electronic and optoelectronic devices. His current research projects include sputtering growth of InGaN for large area optical and electron devices.
Professor Fujioka has authored or co-authored over 200 journal papers. Dr. Fujioka is a member of Japanese Society of Applied Physics and the Chemical Society of Japan. He has been serving as a vice president of Japanese Association of Crystal Growth from 2012. He has been also serving as a chairman of the Japan Society for the Promotion of Science 161 committee from 2012.
Publications (7)

SPIE Conference Volume | 7 June 2019

SPIE Conference Volume | 23 May 2018

SPIE Conference Volume | 27 March 2017

SPIE Conference Volume | 21 July 2016

SPIE Conference Volume | 30 April 2015

Showing 5 of 7 publications
Conference Committee Involvement (14)
Gallium Nitride Materials and Devices XV
4 February 2020 | San Francisco, California, United States
Gallium Nitride Materials and Devices XIV
4 February 2019 | San Francisco, California, United States
Gallium Nitride Materials and Devices XIII
29 January 2018 | San Francisco, California, United States
Gallium Nitride Materials and Devices XII
30 January 2017 | San Francisco, California, United States
Gallium Nitride Materials and Devices XI
15 February 2016 | San Francisco, California, United States
Showing 5 of 14 Conference Committees
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