Mr. Hirotaka Miyamoto Profile

Hirotaka Miyamoto

at Gigaphoton Inc

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Author

Publications (8)

Proceedings Article | 14 April 2023 Poster

Contributing to sustainability delivers maximizing availability by the latest light source for the ArF immersion lithography and KrF lithography

Takeda Yuuki, Takamitsu Komaki, Hirotaka Miyamoto, Tsukasa Hori, Katsuhiko Wakana, Takeshi Ohta, Takashi Saito, Hakaru Mizoguchi

Proceedings Volume PC12494, PC124940J (2023) https://doi.org/10.1117/12.2658263

KEYWORDS: Light sources, Immersion lithography, Semiconductors, Optical components, Manufacturing, Electrodes

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Proceedings Article | 22 February 2021 Presentation

Latest ArF light source with speckle reduction technology for immersion lithography improving chip yield

Hirotaka Miyamoto, Takamitsu Komaki, Toshihiro Oga, Taku Yamazaki, Tsukasa Hori, Masato Moriya, Hiroshi Tanaka, Takuya Ishii, Akihiko Kurosu, Katsuhiko Wakana, Takeshi Ohta, Satoru Bushida, Takashi Saito, Hakaru Mizoguchi

Proceedings Volume 11613, 116130D (2021) https://doi.org/10.1117/12.2583281

KEYWORDS: Light sources, Speckle, Yield improvement, Extreme ultraviolet lithography, Immersion lithography, Spatial coherence, Temporal coherence, Line width roughness, Optical lithography, Lithography

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Proceedings Article | 23 March 2020 Paper

Imaging performance enhancement by improvements of spectral performance stability and controllability on the cutting-edge

Miwa Igarashi, Hirotaka Miyamoto, Masahide Katou, Hiroaki Tsushima, Masato Moriya, Akihiko Kurosu, Hiroshi Tanaka, Satoshi Tanaka, Takeshi Ohta, Satoru Bushida, Takashi Saitou, Hakaru Mizoguchi

Proceedings Volume 11327, 1132717 (2020) https://doi.org/10.1117/12.2551845

KEYWORDS: Diffraction gratings, Prisms, Diffraction, Actuators, Light sources, Control systems, Oscillators, Wavefronts, Beam expanders, Excimer lasers

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Multiple patterning ArF immersion lithography has been expected as the promising technology to meet tighter leading edge device requirements. To enhance the resolution and productivity for multiple-patterning application, key light source performances are spectral bandwidth stability and wavelength stability. The increased spectral bandwidth stability contributes to more precise critical dimension (CD) control and improves device yield. The increased wavelength stability can realize accurate focus and improve overlay accuracy. Our new spectral bandwidth control module improves E95 spectral bandwidth stability. The spectral bandwidth has deviations by thermal history with light source operations. It should be always controlled tightly even after a quiescent interval, such as wafer loading. In our laser system, a spectral bandwidth is controlled by adjusting the wavefront of a laser beam using a two-lens optical system within a resonator. A high speed actuator equipped the movable lens enables E95 spectral bandwidth stability to be less variation. New designs of drive mechanism suppress the lens vibration and spectral bandwidth error. This technology enables 3-sigma of E95 spectral bandwidth field average to be under 5 fm. This large shrinkage for E95 spectral bandwidth stability is the key to improve larger focus budgets for a leading edge processes. A new designed line narrowing module (LNM) improves wavelength stability. The wavelength is controlled by changing the rotation of a beam expander prism using actuator. Wavelength stability is improved further by the anti-vibration structure of the actuated prism in the LNM. The new design prism holding mechanisms reduce the mass of actuator load. This increases the stiffness of the system and suppresses the vibration of the prism rotation. New LNM reduce wavelength stability about 20%. The improvement in wavelength stability contributes to accurate focus and overlay. In addition, the lifetime of LNM is extending to reduce the Cost of Operation (CoO) and the light source downtime. A new ArF excimer laser, GT66A, maximizes device yield, process productivity and minimizes the operational costs for chipmakers.

Proceedings Article | 20 March 2018 Presentation + Paper

Next-generation ArF laser technologies for multiple-patterning immersion lithography supporting leading edge processes

Hirotaka Miyamoto, Hiroshi Furusato, Keisuke Ishida, Hiroaki Tsushima, Akihiko Kurosu, Hiroshi Tanaka, Takeshi Ohta, Satoru Bushida, Takashi Saito, Hakaru Mizoguchi

Proceedings Volume 10587, 1058710 (2018) https://doi.org/10.1117/12.2297316

KEYWORDS: Diffraction, Actuators, Semiconducting wafers, Diffraction gratings, Laser applications, Electrodes, Oscillators, Immersion lithography, Light sources, Laser stabilization

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Multiple patterning ArF immersion lithography has been expected as the promising technology to meet tighter process control requirements. The most important features for the next generation light sources are improvement of chip yield, enhancement of productivity and reduction of operational costs for chipmakers [1][2]. One of key performance for light source is E95 bandwidth, which has become more important parameter for enhancing process margin and improving device productivity. A faster actuator to move a lens improves E95 bandwidth stability [3]. This technology enables 3σ of E95 bandwidth field average to be under 10 fm. This contributes to more precise CD control and improves device yield. Latest LNM enables E95 bandwidth to lower from the standard 300 fm to 200 fm [4]. The large shrinkage for E95 bandwidth is achieved by introducing the ingenious design in LNM. High purity E95 bandwidth improves imaging contrast and therefore increases exposure latitude. A new control algorithm enables E95 bandwidth to vary up to 450 fm, leveraging the movable lens. The combination of the new LNM, the movable lens and the new bandwidth control algorithm enables E95 bandwidth to control between 200 fm and 450 fm [5]. The tunable E95 bandwidth technology can improve process productivity for chip makers by compensating not only machine to machine difference of imaging contrast but also difference of imaging contrast between different generation scanners. The tunable E95 bandwidth technology has no influence on key laser performance indicator, dose stability, wavelength stability, E95 bandwidth stability, etc. On the other hand, to reduce downtime and operational costs for chipmakers, the lifetime of consumable modules such as a chamber and a line narrowing module (LNM) is needed to be extended. New electrodes with chamber enables chamber lifetime to extend from 60 billion pulses (Bpls) to 70 Bpls. Furthermore, new optical design in LNM enables the lifetime to extend from 60 Bpls to 110 Bpls. A new ArF excimer laser, GT65A, maximizes device yield, process productivity and minimizes the operational costs for chipmakers.

Proceedings Article | 20 March 2018 Paper

Extremely long life excimer laser technology for multi-patterning lithography

Yousuke Fujimaki, Makoto Tanaka, Takashi Itou, Hirotaka Miyamoto, Miwa Igarashi, Hiroaki Tsushima, Takeshi Asayama, Takahito Kumazaki, Akihiko Kurosu, Takeshi Ohta, Satoru Bushida, Hakaru Mizoguchi

Proceedings Volume 10587, 105871J (2018) https://doi.org/10.1117/12.2297341

KEYWORDS: Electrodes, Excimer lasers, Lithography, Laser applications, Diffraction gratings

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Proceedings Article | 24 March 2017 Presentation + Paper

The ArF laser for the next generation multiple-patterning immersion lithography supporting green operations and leading edge processes

Hirotaka Miyamoto, Takahito Kumazaki, Hiroaki Tsushima, Akihiko Kurosu, Takeshi Ohta, Satoru Bushida, Takashi Matsunaga, Hakaru Mizoguchi

Proceedings Volume 10147, 1014719 (2017) https://doi.org/10.1117/12.2257959

KEYWORDS: Neon, Helium, Gases, Image processing, Nitrogen, Immersion lithography, Gas lasers, Image contrast enhancement, Image enhancement, Excimer lasers, Actuators, Wavefronts, Refractive index, Semiconducting wafers, Critical dimension metrology

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Multiple patterning ArF immersion lithography has been expected as the promising technology to meet tighter leading edge device requirements. The most needed features for the next generation lasers are improvement of device yield, the prevention against rare resource shortage and the reduction of operational costs in multiple-patterning lithography [1] [2]. To support these requirements, GT65A provides the functions of tighter E95 bandwidth stability, lower E95 bandwidth and tunable E95 bandwidth to enhance chip yields [3] [4]. Furthermore, in the prevention against rare resource shortage and the reduction of operational costs, GT65A realizes helium-free operation in a line narrowing module (LNM) and the reduction of neon consumption in a chamber [5]. A faster actuator equipped with the movable lens enables shot average of E95 bandwidth stability to be within ±5 fm to more rapidly adjust laser beam wavefront. More stable spectral bandwidth stability leads to improve CD uniformity. New designed LNM realizes 200 fm of lower E95 bandwidth, because it suppresses thermal wavefront deformation in optical elements and mechanical components. Lower E95 bandwidth improves image contrast and enhances exposure latitude. The combination of a faster actuator and new LNM enables tunable E95 bandwidth to vary from 200 to 450 fm at less than time intervals of a wafer lot exchange, six seconds. This enhances imaging margins by optimizing E95 bandwidth of light sources according to individual scanners. New LNM additionally enables helium-free operation to lower E95 bandwidth in spite of nitrogen purge with higher refractive index variation to temperature. The employment of a new LNM can avoid helium supply risk and saves helium consumption of 80 kL/year/unit. Gas recycling system saves by about 92% of neon consumption in ArF laser. Similarly, the recycling system saves about 85% of neon consumption in KrF laser too. These functions with GT65A improve chip yield and process margins, and support sustainable high volume manufacturing (HVM).

Proceedings Article | 15 March 2016 Paper

The next-generation ArF excimer laser for multiple-patterning immersion lithography with helium free operation

Hirotaka Miyamoto, Takahito Kumazaki, Hiroaki Tsushima, Akihiko Kurosu, Takeshi Ohta, Takashi Matsunaga, Hakaru Mizoguchi

Proceedings Volume 9780, 97801I (2016) https://doi.org/10.1117/12.2218778

KEYWORDS: Helium, Lithography, Excimer lasers, Immersion lithography, Optical lithography, Refractive index, Nitrogen, Wavefronts, Algorithm development, Deep ultraviolet, Diffraction gratings, Thermal effects, Optical components

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Proceedings Article | 15 March 2016 Paper

The ArF laser for the next-generation multiple-patterning immersion lithography supporting green operations

Keisuke Ishida, Takeshi Ohta, Hirotaka Miyamoto, Takahito Kumazaki, Hiroaki Tsushima, Akihiko Kurosu, Takashi Matsunaga, Hakaru Mizoguchi

Proceedings Volume 9780, 978010 (2016) https://doi.org/10.1117/12.2219379

KEYWORDS: Helium, Neon, Control systems, Laser development, Optical components, Immersion lithography, Excimer lasers, Optical lithography, Lithography, Gas lasers, Actuators, Semiconducting wafers, Laser applications

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