Mr. Hiroyasu Takada Profile

Hiroyasu Takada

at Meiji Univ

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Proceedings Article | 13 February 2008 Paper

Optical properties of beta-FeSi2 on Si (100) inclined substrate

Hiroyasu Takada, Shin-ichiro Uekusa

Proceedings Volume 6898, 68981G (2008) https://doi.org/10.1117/12.762793

KEYWORDS: Silicon, Raman spectroscopy, Thin films, Absorption, Optical properties, Iron, Annealing, Crystals, Raman scattering, Scattering

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β-FeSi₂has been attracting a great deal of attention because of its compatibility with Si-based light-emitting diodes (LEDs). It has also been reported that Β-FeSi₂ thin film undergoes a direct transition with a band gap of about 0.85 eV. However, some authors have reported that β-FeSi₂ has an indirect band gap structure on the basis of several first principles calculations. This difference is thought to be induced by the stress of the β-FeSi₂ interface acting on Si by lattice mismatch, which affects the band structure of the β-FeSi₂ thin film. To investigate the effect, we evaluated the optical properties of β-FeSi₂ grown on lattice matched Si (001) substrate 8°off toward the <110> direction. All samples were formed by depositing Fe on the Si substrate to grow β-FeSi₂ thin film by electron beam deposition. From Raman measurements, it was observed that the samples prepared on inclined substrate shifted to higher wave numbers. From the optical absorption measurement, we observed that the band structure was changed by the Si off substrate. Additionally, the PL intensity at about 0.8 eV for the samples grown on the Si off substrate was increased.

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