Dr. Hiroyoshi Tanabe Profile

Dr. Hiroyoshi Tanabe

at AGC

SPIE Involvement:

Conference Program Committee | Conference Chair | Author

Publications (29)

PROCEEDINGS ARTICLE | September 9, 2013

Direct phase-shift measurement of an EUV mask with gradient absorber thickness

Proc. SPIE. 8880, Photomask Technology 2013

KEYWORDS: Data modeling, Scattering, Sensors, Light scattering, Reflectivity, Reflectometry, Photomasks, Extreme ultraviolet, Phase measurement, Phase shifts

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PROCEEDINGS ARTICLE | October 14, 2011

Phase-shifting effect of thin-absorber EUV masks

Proc. SPIE. 8166, Photomask Technology 2011

KEYWORDS: Lithography, Refractive index, Phase shifting, Reflectivity, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Binary data, Phase shifts

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PROCEEDINGS ARTICLE | April 8, 2011

EUVL dark-field exposure impact on CDs using thick and thin absorber masks

Proc. SPIE. 7969, Extreme Ultraviolet (EUV) Lithography II

KEYWORDS: Lithography, Phase shifting, Reflection, Electroluminescence, Photomasks, Extreme ultraviolet, Line width roughness, Cadmium sulfide, Extreme ultraviolet lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | June 11, 2010

Short-range electron backscattering from EUV masks

Proc. SPIE. 7748, Photomask and Next-Generation Lithography Mask Technology XVII

KEYWORDS: Multilayers, Backscatter, Scattering, Chromium, Monte Carlo methods, Photomasks, Extreme ultraviolet, Cadmium sulfide, Extreme ultraviolet lithography, Tantalum

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PROCEEDINGS ARTICLE | May 14, 2007

LER transfer from a mask to wafers

Proc. SPIE. 6607, Photomask and Next-Generation Lithography Mask Technology XIV

KEYWORDS: Wafer-level optics, Light sources, Spatial frequencies, Fourier transforms, Scanning electron microscopy, Photomasks, Line width roughness, Line edge roughness, Semiconducting wafers, Decision support systems

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SPIE Conference Volume | August 28, 2003

Photomask and Next-Generation Lithography Mask Technology X

PROCEEDINGS ARTICLE | December 27, 2002

PMJ 2002 Panel Discussion Review: Lithography strategy from 90- to 65-nm nodes -- ArF, F2, or EPL?

Proc. SPIE. 4889, 22nd Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Scanners, Particles, Pellicles, Transmittance, Photomasks, Extreme ultraviolet, Mask making, Semiconducting wafers, Phase shifts

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PROCEEDINGS ARTICLE | March 11, 2002

PMJ01 panel discussion review: issues on mask technology for 100-nm lithography

Proc. SPIE. 4562, 21st Annual BACUS Symposium on Photomask Technology

KEYWORDS: Lithography, Reticles, Inspection, Printing, Transmittance, Photomasks, Optical proximity correction, Critical dimension metrology, Phase shifts, Defect inspection

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PROCEEDINGS ARTICLE | July 19, 2000

Impact of MEF on 0.15-um KrF lithography

Proc. SPIE. 4066, Photomask and Next-Generation Lithography Mask Technology VII

KEYWORDS: Lithography, Cadmium, Transmittance, Photomasks, Optical simulations, Excimer lasers, Critical dimension metrology, Semiconducting wafers, Binary data, Phase shifts

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PROCEEDINGS ARTICLE | July 5, 2000

Influence of resist process on the best focus shift due to lens spherical aberration

Proc. SPIE. 4000, Optical Microlithography XIII

KEYWORDS: Lithography, Monochromatic aberrations, Diffusion, Wavefront aberrations, Photomasks, Phase measurement, Critical dimension metrology, Neodymium, Photoresist processing, Phase shifts

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PROCEEDINGS ARTICLE | June 23, 2000

193-nm chemically amplified positive resists based on poly(norbornene-alt-maleic anhydride) with plasticizing additives

Proc. SPIE. 3999, Advances in Resist Technology and Processing XVII

KEYWORDS: Lithography, Polymers, Glasses, Annealing, Silicon, Diffusion, Scanning electron microscopy, Photomicroscopy, Temperature metrology, Chemically amplified resists

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PROCEEDINGS ARTICLE | August 25, 1999

Interactive OPC simulator for memory devices

Proc. SPIE. 3748, Photomask and X-Ray Mask Technology VI

KEYWORDS: Diffusion, Computer simulations, 3D modeling, Photoresist materials, Photomasks, Optical proximity correction, Convolution, Device simulation, Instrument modeling, Chemically amplified resists

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PROCEEDINGS ARTICLE | August 25, 1999

Pattern dependence of mask topography effect in alternating phase-shifting masks

Proc. SPIE. 3748, Photomask and X-Ray Mask Technology VI

KEYWORDS: Lithography, Etching, Quartz, Light scattering, Photomasks, Mask making, Critical dimension metrology, Destructive interference, Binary data, Phase shifts

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PROCEEDINGS ARTICLE | June 11, 1999

Effects of polymer structure on dissolution characteristics in chemically amplified 193-nm resists

Proc. SPIE. 3678, Advances in Resist Technology and Processing XVI

KEYWORDS: Lithography, Lithographic illumination, Etching, Polymers, Silicon, Diffusion, Resistance, Scanning electron microscopy, Silicon films, 193nm lithography

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PROCEEDINGS ARTICLE | December 18, 1998

Optical proximity correction for 0.15-um-rule memory devices

Proc. SPIE. 3546, 18th Annual BACUS Symposium on Photomask Technology and Management

KEYWORDS: Lithography, Etching, Dry etching, Chromium, Head, Photomasks, Excimer lasers, Optical proximity correction, Mask making, Critical dimension metrology

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PROCEEDINGS ARTICLE | December 18, 1998

Inspection of OPC reticle for 0.18-um-rule devices

Proc. SPIE. 3546, 18th Annual BACUS Symposium on Photomask Technology and Management

KEYWORDS: Wafer-level optics, Reticles, Lithium, Defect detection, Scanners, Inspection, Optical proximity correction, Semiconducting wafers, Optical calibration, Defect inspection

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PROCEEDINGS ARTICLE | September 1, 1998

High-transmittance rim-type attenuated phase-shift masks for sub-0.2-um hole patterns

Proc. SPIE. 3412, Photomask and X-Ray Mask Technology V

KEYWORDS: Lithography, Deep ultraviolet, Opacity, Quartz, Photography, Chromium, Scanning electron microscopy, Transmittance, Photomasks, Phase shifts

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PROCEEDINGS ARTICLE | September 1, 1998

Subresolution assist feature masks for 0.2-um window pattern formation

Proc. SPIE. 3412, Photomask and X-Ray Mask Technology V

KEYWORDS: Lithography, Defect detection, Dry etching, Photography, Manufacturing, Inspection, Photomasks, Excimer lasers, Critical dimension metrology, Semiconducting wafers

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PROCEEDINGS ARTICLE | June 29, 1998

Deblocking reaction of chemically amplified ArF positive resists

Proc. SPIE. 3333, Advances in Resist Technology and Processing XV

KEYWORDS: Lithography, Contamination, Statistical analysis, Polymers, Silicon, Diffusion, Chemical analysis, Beryllium, Temperature metrology, Absorption

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PROCEEDINGS ARTICLE | June 29, 1998

Compatibility of chemically amplified photoresists with bottom antireflective coatings

Proc. SPIE. 3333, Advances in Resist Technology and Processing XV

KEYWORDS: Lithography, Silicon, Diffusion, Reflectivity, Photoresist materials, Silicon films, Excimer lasers, Semiconducting wafers, Bottom antireflective coatings, Chemically amplified resists

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The effects of acid structures and blocking groups in chemically amplified resists on compatibility with bottom anti-reflective coatings (BARCs), were investigated. The resists consisted of tert-butoxy carbonyl (t-BOC) or acetal blocked polyhydroxystyrene with three types of photoacid generators (PAGs) which generate trifluoromethanesulfonic acid (acid 1), 2,4-dimethyl benzensulfonic acid (acid 2) and cyclohexanesulfonic acid (acid 3). Three types of commercially available BARCs, Brewer Science CD9, DUV11 and DUV18 were used for this study. CD9 was decomposed by exposure and generated an acid substance, which induced the necking at the bottom of the resist films. In the case of DUV11, the generated acid from the PAG was neutralized, and footing was observed in t-BOC type resists. Acetal type resists had no footing on DUV11 because the deblocking reaction progressed without post-exposure baking. DUV18 had good compatibility with most of the resist materials because of its neutral acidity. From the viewpoint of resist materials, it was found that the acetal type resists tended to have necking, because the deblocking reaction occurred at lower acid concentration compared with t-BOC type resists. Moreover, the tendency to have a necking profile, in increasing order, was acid 3 > acid 2 > acid 1. This order corresponded with the reverse order of the efficiency of the deblocking reaction. A weak acid might be greatly affected by some substance diffused from a BARC. The acetal type resist with acid 1 had excellent compatibility with various BARCs. However, the resolution capability of the acetal type resist with acid 1 was lower than that of the acetal type resist with acid 3, because the acid diffusion length of acid 1 was larger than that of acid 3. It was concluded that good compatibility of the resist with the BARC is achieved by the high deblocking reaction efficiency and moderate diffusion length of acid in acetal type resists.

PROCEEDINGS ARTICLE | July 28, 1997

Large assist feature phase-shift mask for sub-quarter-micrometer window pattern formation

Proc. SPIE. 3096, Photomask and X-Ray Mask Technology IV

KEYWORDS: Lithography, Lithographic illumination, Scattering, Etching, Quartz, Light scattering, Photomasks, Excimer lasers, Semiconducting wafers, Phase shifts

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PROCEEDINGS ARTICLE | July 7, 1997

Optical proximity correction of alternating phase-shift masks for 0.18-um KrF lithography

Proc. SPIE. 3051, Optical Microlithography X

KEYWORDS: Lithography, Monochromatic aberrations, Photomasks, Excimer lasers, Optical proximity correction, Phase shifts

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PROCEEDINGS ARTICLE | February 12, 1997

Attenuated phase-shift masks reducing side-lobe effect in DRAM peripheral circuit region

Proc. SPIE. 3236, 17th Annual BACUS Symposium on Photomask Technology and Management

KEYWORDS: Lithography, Electron beams, Deep ultraviolet, Chromium, Amplifiers, Photoresist materials, Photomasks, Mask making, Binary data, Phase shifts

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PROCEEDINGS ARTICLE | June 7, 1996

Xe2 excimer lamp (172 nm) for optical lithography

Proc. SPIE. 2726, Optical Microlithography IX

KEYWORDS: Lithography, Optical filters, Optical lithography, Lamps, Printing, Photoresist materials, Transmittance, Excimer lasers, Excimers, Vacuum ultraviolet

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PROCEEDINGS ARTICLE | July 3, 1995

Sub 0.1 um ArF excimer laser lithography with alternating phase-shifting masks

Proc. SPIE. 2512, Photomask and X-Ray Mask Technology II

KEYWORDS: Lithography, Optical lithography, Deep ultraviolet, Etching, Quartz, Image resolution, Transmittance, Photomasks, Excimer lasers, Phase shifts

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PROCEEDINGS ARTICLE | May 26, 1995

Efficient 3D phase-shifting mask lithography simulation

Proc. SPIE. 2440, Optical/Laser Microlithography VIII

KEYWORDS: Lithography, Waveguides, Imaging systems, Spatial frequencies, Glasses, Particles, 3D modeling, Photomasks, Systems modeling, Fused deposition modeling

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PROCEEDINGS ARTICLE | May 26, 1995

Fast optical proximity correction: analytical method

Proc. SPIE. 2440, Optical/Laser Microlithography VIII

KEYWORDS: Wafer-level optics, Reticles, Optical lithography, Image segmentation, Transmittance, Photomasks, Optical proximity correction, Semiconducting wafers, Testing and analysis, Phase shifts

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PROCEEDINGS ARTICLE | June 1, 1992

Resolution improvement with annular illumination

Proc. SPIE. 1674, Optical/Laser Microlithography V

KEYWORDS: Lithography, Microscopes, Light sources, Optical lithography, Lithographic illumination, Spatial frequencies, Printing, Photomasks, Photoresist processing, Light

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PROCEEDINGS ARTICLE | June 1, 1992

Modeling of optical images in resists by vector potentials

Proc. SPIE. 1674, Optical/Laser Microlithography V

KEYWORDS: Optical lithography, Dielectrics, Magnetism, 3D modeling, Wave propagation, Differential equations, Chemical elements, Electromagnetism, Radio propagation, Maxwell's equations

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Showing 5 of 29 publications

Conference Committee Involvement (4)

Photomask and Next Generation Lithography Mask Technology XIV

17 April 2007 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XIII

18 April 2006 | Yokohama, Japan

Photomask and Next-Generation Lithography Mask Technology XII

13 April 2005 | Yokohama, Japan

Photomask and NGL Mask Technology X

16 April 2003 | Yokohama, Japan

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