The rapid advancement of microelectronics technology places higher demands on the interconnection of integrated circuits. The continuous reduction of the critical dimension in the microelectronics fabrication process has led to an increase in the power consumption of the metal interconnect lines. There are many advantages of the on-chip optical interconnect structure, like high speed or low power consumption. Therefore it is one of the best alternatives to the metal interconnect process. GaAlAs/ GaAs is used to make light sources of common optical interconnect structures and these light sources are poorly compatible with CMOS processes. In this paper, we designs a new structure of silicon-based avalanche light source (SBALS), which has the advantages of being compatible with CMOS technology, based on the existing theory of SBALS. And we preliminarily design an on-chip optical interconnect structure by SBALS, which is proposed for optical interconnects in integrated circuits.
Light emission in silicon LEDs that operate in the avalanche mode of operation, was analyzed by appropriate modelling, including the silicon energy band structure, available carrier energy spread, and available carrier momentum spread. These mechanisms play key roles in the realization of light emitting, using standard silicon processing procedures. The analyses indicate that appropriate doping and controlling the energized specifically electrons, carrier energy and carrier density by field manipulation, and controlling carrier momentum through appropriate impurity scattering technology, show great potential to enhance these emissions. Particularly, development work conducted on the p+np+ mono-silicon LED and the N+PN+PN+ Poly silicon LED show that field control, impurity and defect scattering and balancing the carrier type and carrier density has a profound influence on the optical emission intensity in Si AMLEDs. Furthermore, a much clearer understanding of the mechanisms responsible for optical emissions in Si Av LEDs has been obtained and can proceed with further improved device designs and applications.