We have developed a cost-effective, quad-frequency band THz imager for real-time THz imaging applications operating
at 220GHz, 320GHz, 420GHz, and 520GHz frequency bands. The new sensor is based on antimonide-based
heterostructure backward diodes impedance matched and monolithically integrated with high-gain, narrowband planar
antennas. The antennas are dual-linearly polarized to allow direct measurement of beam polarization. This paper details
the fabricated THz detector array and the high-speed, low-noise readout electronic chain. Experimental results on the
performance of the readout chain and simulations of the expected THz detector performance are presented.
The widespread adoption of THz based applications has been hindered by the lack of a real-time, broad-band, cost-effective
THz camera with sufficient sensitivity to enable applications in markets as diverse as security, non-destructive
evaluation, and biomedical imaging. This technological gap can be filled through the development of an 80 x 64 pixel
array of Sb-heterostructure backward diodes (Sb-HBDs) monolithically integrated to broadband (600 GHz - 1200 GHz)
antennas that can be directly flip-chipped to a CMOS voltage-mode readout integrated circuit (ROIC). This paper
outlines the current progress of the project.