The growth of hexagonal GaN-on-Si(100) sample prepared by pulsed laser deposition (PLD) was employed in the
development of GaN-on-Si technology. In contrast to common GaN-on-sapphire and GaN-on-Si(111) technologies, the
use of the GaN film on Si(100) by PLD provides low-cost and large-area single crystalline GaN template for GaN
applications, via a single growth process without any interlayer or interruption layer. The evolution of GaN growth
mechanism on Si(100) substrate with various growth times is established by SEM and TEM data, which indicated that
the growth mode of the GaN films gradually changes from island growth to layer growth when the growth time increases
up to 2hrs. Moreover, no significant GaN meltback was found on the GaN sample surface due to the high-temperature
operation of PLD. The GaN sample was subjected to MOCVD treatment to regrow a GaN layer. The results of X-ray
diffraction analysis and photoluminescence measurement show the reliability of the PLD-GaN sample and are promising
for the development of the GaN-on-Si technology using PLD technique.
GaN epilayer can be grown on sapphire substrate with a Ga2O3 sacrificial layer. It was employed for the epilayer
transferring from sapphire substrate to Cu substrate using the chemical lift-off process application. The (-201)
oriented β-Ga2O3 thin film was first deposited on the c-plane sapphire substrate, followed by the GaN growth
via metalorganic vapor phase epitaxy under N2 and H2 environment in sequence. The crystal quality of GaN
epilayer can be improved dramatically with the regrowth in a H2 ambient. A GaN epilayer with an electroplated
copper substrate was demonstrated using a chemical lift-off process where the Ga2O3 sacrificial layer can be
laterally etched out with a hydrofluoric solution. It is worthy to mention that the separated sapphire substrate can
be cleaned and reused for LED epitaxial growth next time. It is benefiting the cost down for the LED fabrication
and Green Photonics Development.
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