Mr. Sicong Hu Profile

Sicong Hu

at BeiHang Univ

SPIE Involvement:

Author

Publications (1)

This will count as one of your downloads.

You will have access to both the presentation and article (if available).

DOWNLOAD NOW

This content is available for download via your institution's subscription. To access this item, please sign in to your personal account.

Email or Username Forgot your username?

Password Forgot your password?

Show

Keep me signed in

No SPIE account? Create an account

Proceedings Article | 10 February 2017 Paper

Study on degradation of propagation delay time and low-frequency noise of high-speed optocoupler

Jiaoying Huang, Sicong Hu, Xiangfen Wang, Linjiang Hu

Proceedings Volume 10250, 102500G (2017) https://doi.org/10.1117/12.2267283

KEYWORDS: Reliability

Read Abstract +

CTR (Current transfer ratio) is generally used to characterize the reliability parameters of optocoupler in engineering. However, high-speed optocoupler has a different structure from the common optocoupler, therefore its most important parameter should be propagation delay time. In addition, CTR serving as the macroscopic parameters, its changes can’t directly reflect microscopic changes of the internal defects in device. It is discovered that the number of microscopic defects in the device and the level of low-frequency noise shows a positive correlation. In terms of high-speed optocoupler, this paper proposed a method of combining propagation delay time and low-frequency noise to evaluate the storage reliability.

The paper demonstrated how to design circuit to test these parameters and obtain their variations trajectory in accelerated degradation test. In this paper, 20 VO2630 devices were divided into four groups, and a accelerated test at 100°C, 125°C, 150°C and 175°C was conducted to monitor propagation delay time and other parameters related with low-frequency noise. These parameters had different degrees of degradation. This paper showed the degradation process of propagation delay time. It was found that the initial value of propagation delay time was nearly identical, but parameters related with low-frequency noise had different initial values. The larger the initial value of low frequency noise is, the faster propagation delay time will degrade. The main cause of degradation of propagation delay time is Schottky clamped transistor degradation. Finally, this paper discussed the advantages and disadvantages about utilizing conventional electrical parameters or low frequency noise to evaluate the reliability.

My Library

You currently do not have any folders to save your paper to! Create a new folder below.

Folder Name

Folder Description

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks. You are receiving this notice because your organization may not have SPIE eBooks access.*

*Shibboleth/Open Athens users─please sign in to access your institution's subscriptions.

To obtain this item, you may purchase the complete book in print or electronic format on SPIE.org.

ORGANIZATIONAL
Sign in with credentials provided by your organization.

Organizational Username

Organizational Password

Show/Hide Password

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members:

Non-members: ADD TO CART

Keywords/Phrases

Search In:

Publication Years