Super-resolution near-field structure (super-RENS) is a functional structure which can overcome the optical diffraction limit and play an important role in nano scale optical data storage. The resolution enhancement of the scatter-type super- RENS optical disk is related to the localized surface plasmon of silver particles dissociated from the AgOx layer and its near-field interaction with the recording pits in the phase change layer. Recently, a new method for optically synthesizing silver nanoparticles in a phase change matrix has been proposed by our group [Mater. Chem. Phys. 135, 467-473(2012)], which provides a potential approach to forming a more simple plasmonic recording structure than the traditional AgOx-type structure. In this paper, field distribution of silver-nanoparticles-embedded Ge2Sb2Te5 phase change recording pits is numerically analyzed by the finite-difference time-domain (FDTD) method. The optical contrast enhancement capability is confirmed for the optimized recording structures when the pit size is smaller than the optical diffraction limit.
The crystallization properties of as-deposited amorphous AgInSbTe thin films irradiated by single-shot picosecond laser pulses were studied using in-situ transient optical reflectance and electrical resistance measurements with nanosecond resolution. It was found that the real-time optical and electrical signal responses were different under the same pumping conditions. The optical signals showed a multistage crystallization process with a total time of approximately 150 ns, while the electrical signals showed a negative exponential trend decreasing to the final stable state within about several microseconds. A resistor–capacitor model was constructed to explain this delayed electrical response. The fluencedependent evolution dynamics maybe implied a non-fully crystallization process under ultra-short pulse stimulation.
Sb-rich SiSb thin film was recently reported as a promising phase change meromy material. In this paper, optical and
structural properties of as-deposited amouphous and laser-annealed crystalline Sb-rich SiSb thin films are studied and
compared with pure Sb thin film. Sb and Si15Sb85 thin films were deposited on polycarbonate substrates by magnetron
sputtering. Laser initialization in pure Sb and Si15Sb85 thin films were performed with phase-change optical disc
initializer. Reflectivity Spectrum and XRD analysis were performed on as-deposited and initialized Sb and Si15Sb85 thin
films. The influence of Si doping on its optical and structural properties are discussed and qualitatively explained by a
distorted structure model.