High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.
The solid state laser relies on the laser diode (LD) pumping array. Typically for high peak power quasi-CW (QCW) operation, both energy output per pulse and long term reliability are critical. With the improved bonding technique, specially Indium-free bonded diode laser bars, most of the device failures were caused by failure within laser diode itself (wearout failure), which are induced from dark line defect (DLD), bulk failure, point defect generation, facet mirror damage and etc. Measuring the reliability of LD under QCW condition will take a rather long time. Alternatively, an accelerating model could be a quicker way to estimate the LD life time under QCW operation. In this report, diode laser bars were mounted on micro channel cooler (MCC) and operated under QCW condition with different current densities and junction temperature (Tj ). The junction temperature is varied by modulating pulse width and repetition frequency. The major concern here is the power degradation due to the facet failure. Reliability models of QCW and its corresponding failures are studied. In conclusion, QCW accelerated life-time model is discussed, with a few variable parameters. The model is compared with CW model to find their relationship.
In this paper three dimensional characterization of the far field of diode laser beam is proposed. Both the divergence angle and intensity distribution can be extracted and analyzed from the measurement results with obliquity factor correction and power transmission correction. The instrument provides high resolution and fast measurement.