In this paper, we want to optimize photo-resist coating recipe by using orthogonal experiment and statistical regression analysis. We combined two major factors influenced coating performance -- 'wafer coating time' & 'wafer spinning speed' in TRACK unit with IDITM pump dispense recipe. Eventually, IDITM pump dispense recipe contained of four steps dispense time and dispense pressure. By using orthogonal experiment and statistical regression method we obtained set of process parameters which have good predicted performance values. Based on those data, we could apply it on different viscosity type resist to get good coating performance as decreasing resist dispense volume from 3 cc/pcs to 1.6 cc/pcs. Results showed the performance of CD (Critical Dimension) and CP (Chip Probe) yield was comparable to original 3 cc/pcs coating recipe condition. Actually, we could optimize coating recipe to reach resist usage decreasing purpose.
In lithography process local defocus is a troublesome problem. That is because local defocus is too difficult to catch in time with current monitor method. Once the local defocus symptoms have been observed at ADI. A lot of wafers should suffer repeating local defect from wafer to wafer. in this paper. A real time monitor system will be presented. And the catching rate could reach to 80 percent. Even reach to more catching rate if set specific specification for varied layers. Because varied layers allow different focus tolerance.
The application of polyimide materials on ICs processes are widely accepted. They can be applied as passivation layer, alpha particle barrier, stress buffer and interlayer dielectric, etc. The polyimide materials presented in this article is a negative tone, photosensitive type I-line/G- line compatible polyimide. It is spin-coated onto passivation-etched wafers to form a thick stress buffer with initial thickness 9.5 micrometers after coated and final thickness around 5.0 micrometers after cured. The bonding pad is defined with reversed tone mask compare to passivation mask through exposure and development. In this article, the mechanisms of two types of polyimide defect formation are resolved. One is polyimide residue formed through atomization during rinsing and the other is polyimide bubble take place through chemical reaction of moisture with silicon coupler after coated.
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