Absorption of the light by a solar cell can be improved significantly by light trapping structures formed on the front
surface of the device. In particular, thin crystalline and amorphous solar cells are expected to benefit from the improved
light absorption in a region closer to the surface of the cell. Recently, we have shown that vertically aligned silicon (Si)
nanowires formed on flat (100) Si wafer surface by metal assisted etching can effectively be used for this purpose. In this
paper we present demonstration of nanowire application to industrial size solar cell system and a comparison between
flat and pyramid textured Si wafers. Standard procedures were followed to fabricate solar cells with and without Si
nanowire process on mirror like and pyramid textured Si wafers. The dependence of the solar cell parameters on the
process parameters was studied systematically. Reflection spectra showed successful light trapping behavior on the
surface of the cells. In all samples, we have obtained excellent current-voltage (I-V) characteristics with high fill factors.
However, the efficiency of the cells was found to decrease with the etch duration. This can be attributed to the increased
recombination along the nanowires or increased surface area due to the roughening of the surface after etching process.
Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm<sup>2</sup>/Vs (effective thin film mobility: 0.03 cm<sup>2</sup>/Vs) in devices with 20μm channel lengths and ON/OFF ratios of up to 10<sup>4</sup>.