At 32nm technology node and beyond, the number of defect to be repaired is increased because pattern size is shrunk
and the detecting ability of inspection system higher than before. In repair system, mask surface is exposed to the
various contaminations such as contamination from vacuum chamber wall, reaction gas for repair etc. Although
contaminations deposited on mask surface are removed by followed cleaning process, it makes reflectance change on
scan area detected by high resolution inspection system. This reflectance change on scan area in repair system detected
during inspection is big burden for mask making because the number of scan area requires more time to confirm and
need AIMS simulation if there is any issue on the area. Most of all, it is hard to find where the exact repaired pattern is
and verify whether there are no problems because inspection system does not detect exact repaired pattern but detect all
scan area. Especially, this phenomenon is more observed to MoSi absorber of OMOG mask.
In this paper, we demonstrate the findings of contamination source and the root cause of contamination using surface
analyzing methods, ToF-SIMS(Time of Flight-SIMS) and AFM(Atomic Force Microscope). In addition, preventive
strategy to minimize and remove reflectance change issue in repair system will be discussed.
High PRE (Particle removal efficiency) and damage free cleaning became main cleaning challenges over haze prevention
in photomask industry, nowadays. SRAF (Sub-resolution assist feature) size became small down below 0.1um as pattern
size become small. Acoustic frequency and power is the main parameter to increase PRE in photomask cleaning. 1 MHz
of acoustic frequency was good enough to remove particles and soft defects until recently. But it has shown pattern
damages for SB (Scattering bar) size of below 0.1um unfortunately.
In this paper, we optimized photomask cleaning process to achieve high PRE and low pattern damage. Its haze
prevention capability and cycle cleaning durability was verified with in-house-built HATB and AIMS, respectively.
High speed single frame camera using proximity focused MCP was designed and manufactured by V TEK with help of Yonsei University. The gating time of this camera is adjusted by specially designed control board and S/W easily and this camera has high repetition rate up to 250 KHz. In this paper, we are introducing the newly designed Single Frame Camera and its applications.
The Prototype of Image Converter Streak Camera as single shot mode was developed by the joint research project between V TEK/Yonsei Univ. in Korea and GPI in Russia. The sweeping speed over (phi) 25 mm output screen area is selectable from 1 ns to 500 ns and the time resolution is better than 10 ps. This paper is showing the characteristics of streak camera and its simple applications.
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