Dr. Hyuk Joo Kwon Profile

Dr. Hyuk Joo Kwon

Senior Manager at SUNY Poly SEMATECH

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Author

Publications (27)

Proceedings Article | 17 April 2014 Paper

Investigating printability of native defects on EUV mask blanks through simulations and experiments

Mihir Upadhyaya, Vibhu Jindal, Henry Herbol, Il-Yong Jang, Hyuk Joo Kwon, Jenah Harris-Jones, Gregory Denbeaux

Proceedings Volume 9048, 90483L (2014) https://doi.org/10.1117/12.2057761

KEYWORDS: Finite-difference time-domain method, Photomasks, Chemical species, Transmission electron microscopy, Multilayers, Extreme ultraviolet lithography, Extreme ultraviolet, Monte Carlo methods, Atomic force microscopy, Inspection

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SPIE Journal Paper | 6 February 2013

Applications of advanced metrology techniques for the characterization of extreme ultraviolet mask blank defects

Jenah Harris-Jones, Emilio Stinzianni, Chihcheng Lin, Vibhu Jindal, Ranganath Teki, Hyuk Joo Kwon

JM3, Vol. 12, Issue 01, 013007, (February 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.1.013007

KEYWORDS: Extreme ultraviolet, Transmission electron microscopy, Metrology, Scanning electron microscopy, Particles, Photomasks, Multilayers, Ion beams, Smoothing, Molybdenum

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Proceedings Article | 17 April 2012 Paper

Advanced metrology techniques for the characterization of EUV mask blank defects

Jenah Harris-Jones, Vibhu Jindal, C. C. Lin, Tonmoy Chakraborty, Emilio Stinzianni, Ranganath Teki, Hyuk Joo Kwon

Proceedings Volume 8352, 83520Y (2012) https://doi.org/10.1117/12.922909

KEYWORDS: Extreme ultraviolet, Photomasks, Transmission electron microscopy, Metrology, Scanning electron microscopy, Deposition processes, Spectroscopy, Atomic force microscopy, Extreme ultraviolet lithography, Ions

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Proceedings Article | 17 April 2012 Paper

EUVL defect printability: an industry challenge

Hyuk Joo Kwon, Ranganath Teki, Jenah Harris-Jones, Aaron Cordes

Proceedings Volume 8352, 83520X (2012) https://doi.org/10.1117/12.923013

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet, Extreme ultraviolet lithography, Defect detection, Electron beam lithography, Semiconducting wafers, Transmission electron microscopy, Signal detection, Deep ultraviolet

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Extreme ultraviolet (EUV) patterning appears feasible using currently available EUV exposure tools, but some issues must still be resolved for EUV patterning to be used in production. Defects in EUV mask blanks are one such major issue, as evidenced by the research focused on defect printability. Inspection tools are needed to detect phase defects on EUV mask blanks that could possibly print on the wafer. Currently available inspection tools can capture defects on the mask, but they also need to be able to classify possible printable defects. Defect classification for repair and mitigation of printable defects is very difficult using DUV inspection tools; however, if the actinic inspection tool (AIT) could gather defect information from more multilayer stacks, it may be able to separate printable defects from unprintable defects. If unprintable defects could be eliminated, the defect information could be used for mask pattern shifts to reduce printable defects. Fewer defects would need to be repaired if there were a better chance of capturing printable defects using an actinic inspection tool. Being able to detect printable defects on EUV blanks is therefore critical in mask making. In this paper, we describe the characterization of native phase defects in the manufacturing of EUV mask blanks using the state-of-the-art mask metrology equipment in SEMATECH's Mask Blank Development Center (MBDC). Commercially available quartz substrates were used and Mo/Si multilayers were deposited on the substrates to characterize phase defects. Programmed defects of various dimensions were also prepared using e-beam patterning technology on which multilayers were deposited. Transmission electron microscopy (TEM) was used to study multilayer profile changes, while SEMATECH's AIT was used to image defects and predict their printability. A defect library for native defects and printability of programmed phase defects is introduced. Finally technical challenges for EUV defect printability will be discussed.

Proceedings Article | 23 March 2012 Paper

Smoothing of substrate pits using ion beam deposition for EUV lithography

Jenah Harris-Jones, Vibhu Jindal, Patrick Kearney, Ranganath Teki, Arun John, Hyuk Joo Kwon

Proceedings Volume 8322, 83221S (2012) https://doi.org/10.1117/12.916390

KEYWORDS: Photomasks, Transmission electron microscopy, Extreme ultraviolet, Multilayers, Extreme ultraviolet lithography, Ion beams, Surface roughness, Atomic force microscopy, Ions, Chemical species

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Mitigation of pit-type defects proves to be a major hurdle facing the production of a defect-free mask blank for EUV lithography. Recent efforts have been directed toward substrate smoothing methods during deposition. The angle of incidence of the substrate is known to have a significant effect on the growth of defects during deposition. It has been shown that shadowing effects for bump-type defects are reduced when depositing Mo/Si films at near-normal incidence, resulting in a Gaussian growth profile in which the height and volume of the defect are minimized. Conversely, operating at off-normal incidence reduces shadowing of pit-type defects. When altering the angle of incidence of the substrate, the target angle must be changed to maintain uniformity. The resulting mask blank must also meet surface roughness specifications post-deposition while maintaining a low defect density. In this study, various substrate angle and target angle combinations were investigated within the Veeco Nexus Low Defect Density tool at SEMATECH to find optimum in situ pit smoothing conditions using ion beam deposition on both quartz and low thermal expansion material (LTEM) substrates. The possible substrate-target angle combinations are limited by the design of the current deposition tool; therefore, a phase space has been mapped out to determine uniform and non-uniform regions. Other deposition parameters including operating pressure and working gas composition were also explored. After deposition, EUV reflectrometry measurements were taken to evaluate uniformity in the wavelength; surface roughness, change in pit depth, change in full width at half maximum, and pit smoothing power were determined using atomic force microscopy (AFM); transmission electron microscopy (TEM) was used to study the effect of film disruption through the multilayer; and the printability of smoothed pits will be measure actinically using SEMATECH's AIT tool. Preliminary results show that positive values for substrate angles in the uniform region tend to give a high surface roughness after multilayer deposition; however, the combinations with negative substrate angles show promising results. Substrate angles with lower values resulted in better smoothing than the higher substrate angles. AFM results confirmed that pit smoothing power at lower substrate angles is greater than under the standard deposition conditions employed by the tool. Lower chamber pressure was proven to increase the smoothing power of pit-type defects during deposition. Preliminary TEM cross-section data confirmed the smoothing results obtained by AFM analysis. The use of Ne and Xe as working gases is also under review. Extensive AFM analysis, TEM cross-sections, and printability data will be presented.

Proceedings Article | 21 March 2012 Paper

EUV mask multilayer defects and their printability under different multilayer deposition conditions

Hyuk Joo Kwon, Jenah Harris-Jones, Aaron Cordes, Masaki Satake, Ying Li, Iacopo Mochi, Kenneth Goldberg

Proceedings Volume 8322, 832209 (2012) https://doi.org/10.1117/12.916374

KEYWORDS: Double positive medium, Photomasks, Transmission electron microscopy, Extreme ultraviolet, Inspection, Atomic force microscopy, Semiconducting wafers, Extreme ultraviolet lithography, Electron beam lithography, Defect detection

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Extreme ultraviolet (EUV) patterning appears feasible using currently available EUV exposure tools, but some issues must still be resolved for EUV patterning to be used in production. Defects in EUV mask blanks are one such major issue and inspection tools are needed to detect phase defects on EUV mask blanks that could possibly print on the wafer. Currently available inspection tools can capture defects on the mask, but they also need to be able to classify possible printable defects. Defect classification for repair and mitigation of printable defects is very difficult using deep ultraviolet (DUV) inspection tools; however, if the actinic inspection tool (AIT) could gather defect information from more multilayer (ML) stacks, it may be able to separate printable defects from unprintable defects. If unprintable defects could be eliminated, the defect information could be used for mask pattern shifts to reduce printable defects. Fewer defects would need to be repaired if there were a better chance of capturing printable defects using an actinic inspection tool. Being able to detect printable defects on EUV blanks is therefore critical in mask making. In this paper, we describe the characterization of programmed ML phase defects in the manufacturing of EUV mask blanks using the state-of-the-art mask metrology equipment in SEMATECH's Mask Blank Development Center (MBDC). Programmed defects of various dimensions were prepared using e-beam patterning technology and Mo/Si MLs were deposited with SEMATECH's best known method (BKM) and pit smoothing conditions on programmed defects to characterize ML phase defects. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to study ML profile changes, while SEMATECH's AIT was used to image ML phase defects and predict their printability. Multilayer defect reconstruction (MDR) was done using AFM images, which were then compared to TEM images. Defect printability simulation (DPS) was used for comparison to AIT through-focus images. 22 nm, 27 nm, and 32 nm line and space (L/S) absorber patterns were positioned on top of programmed ML phase defects and simulated defect printability. The ML phase defects are located at the edge of L/S patterns and at the center of space patterns and Bossung plot was used to separate printable defects from unprintable defects.

Proceedings Article | 14 October 2011 Paper

Printability of native blank defects and programmed defects and their stack structures

Hyuk Joo Kwon, Jenah Harris-Jones, Ranganath Teki, Aaron Cordes, Toshio Nakajima, Iacopo Mochi, Kenneth Goldberg, Yuya Yamaguchi, Hiroo Kinoshita

Proceedings Volume 8166, 81660H (2011) https://doi.org/10.1117/12.897165

KEYWORDS: Inspection, Transmission electron microscopy, Photomasks, Extreme ultraviolet, Signal detection, Electron beam lithography, Deep ultraviolet, Multilayers, 3D modeling, Quartz

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Proceedings Article | 14 May 2007 Paper

Requirements of nano-machining repair system for 45-nm node

Sang-Hyeon Lee, Hwa-Sung Kim, Hong-Seok Shim, Su-Young Lee, Geun-Bae Kim, Hyuk-Joo Kwon, Sang-Gyun Woo, Han-Ku Cho

Proceedings Volume 6607, 660712 (2007) https://doi.org/10.1117/12.728951

KEYWORDS: Scanning electron microscopy, Photomasks, Diamond, Neodymium, Critical dimension metrology, Chromium, Quartz, Transmittance, Adhesives, Atomic force microscopy

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Proceedings Article | 20 October 2006 Paper

The study of optical performance for quartz dry etching quality in ArF lithography

Won-Suk Ahn, Hye-Kyung Lee, Young-Ju Park, Hyuk-Joo Kwon, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 6349, 63490C (2006) https://doi.org/10.1117/12.686839

KEYWORDS: Quartz, Etching, Photomasks, Chromium, Dry etching, Nanoimprint lithography, Resolution enhancement technologies, Critical dimension metrology, Electroluminescence, Lithography

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Proceedings Article | 20 May 2006 Paper

Photomask dry-etching techniques for hard mask

Sung-Won Kwon, Young-Ju Park, Sung-Yoon Kim, Han-shin Lee, Hyuk-Joo Kwon, Seung-Woon Choi, Woo-Sung Han

Proceedings Volume 6283, 62831T (2006) https://doi.org/10.1117/12.681756

KEYWORDS: Etching, Photomasks, Dry etching, Photoresist processing, Chlorine, Plasma etching, Chemistry, Critical dimension metrology, Plasma, Lead

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Proceedings Article | 5 November 2005 Paper

A study of Cr to Mosi in situ dry etching process to reduce plasma induced defect

Il-Yong Jang, Young-Ju Park, Hyuk-Joo Kwon, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 5992, 59920O (2005) https://doi.org/10.1117/12.631951

KEYWORDS: Etching, Chromium, Particles, Plasma, Chlorine, Reactive ion etching, Dry etching, Photomasks, Chemistry, Manufacturing

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Proceedings Article | 28 June 2005 Paper

Evaluations of optical performance for micro-trench on quartz etch in ArF lithography

Won-Suk Ahn, Hyuk-Joo Kwon, Seong-Yong Moon, Seong-Woon Choi, Woo-Sung Han

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617227

KEYWORDS: Photomasks, Quartz, Etching, Semiconducting wafers, Fluorine, Dry etching, Chemistry, Wafer-level optics, Lithography, Nanoimprint lithography

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Proceedings Article | 20 August 2004 Paper

Decrease of chrome residue on MoSiON in embedded attenuated-PSM processing

Yong-Dae Kim, Dae-Woo Kim, Dong-Seuk Lee, Pil-Jin Jang, Hyuk-Joo Kwon, Hyun-Jun Cho, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557721

KEYWORDS: Etching, Carbon, Photomasks, Scanning probe microscopy, Plasma, Chromium, Lithography, Polymers, Critical dimension metrology, Fluorine

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Proceedings Article | 17 December 2003 Paper

Dehydration bake effects with UV/O3 treatment for 130-nm node PSM processing

Yong-Dae Kim, Dong-Seuk Lee, Dong-Il Park, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.517977

KEYWORDS: Lithography, Photomasks, Photoresist processing, Quartz, Adhesives, Head-mounted displays, Coating, Inspection, Phase shifts, Binary data

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Proceedings Article | 17 December 2003 Paper

Comparative evaluation of mask cleaning performance

Woo-Gun Jeong, Dong-il Park, Eui-Sang Park, Young-Woong Cho, Se-Jong Choi, Hyuk-Joo Kwon, Jin-Min Kim, Sang-Soo Choi

Proceedings Volume 5256, (2003) https://doi.org/10.1117/12.518030

KEYWORDS: Particles, Deep ultraviolet, Photomasks, Industrial chemicals, Ultraviolet radiation, Scanning probe microscopy, Transmittance, Reticles, Oxygen, Mask cleaning

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Proceedings Article | 28 August 2003 Paper

Modeling and correction of global CD uniformity caused by fogging and loading effects in 90-nm-node CAR process

Dong-Il Park, Eui-Sang Park, Jong-Hwa Lee, Woo-Gun Jeong, Sun-Kyu Seo, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504051

KEYWORDS: Critical dimension metrology, Cadmium, Error analysis, Etching, Photomasks, Convolution, Dry etching, Data modeling, Chromium, Chemically amplified resists

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Proceedings Article | 28 August 2003 Paper

A study of post-exposure baking effect for CAR process in photomask fabrication

Dong-Il Park, Sun-Kyu Seo, Woo-Gun Jeong, Eui-Sang Park, Jong-Hwa Lee, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504187

KEYWORDS: Line edge roughness, Photomasks, Photoresist processing, Chemically amplified resists, Critical dimension metrology, Logic, Logic devices, Lithography, Temperature metrology, Arsenic

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Proceedings Article | 28 August 2003 Paper

Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production

Woo-Gun Jeong, Dong-Il Park, Eui-Sang Park, Sun-Kyu Seo, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Proceedings Volume 5130, (2003) https://doi.org/10.1117/12.504184

KEYWORDS: Critical dimension metrology, Photomasks, Chromium, Platinum, Opacity, Vestigial sideband modulation, Chemically amplified resists, Inspection, Polymers, Control systems

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Proceedings Article | 27 December 2002 Paper

Higher anisotropy and improved surface conditions for 90-nm-node MoSiON ICP dry etch

Dong-Soo Min, Byung-Soo Chang, Hyuk-Joo Kwon, Boo-Yeon Choi

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467493

KEYWORDS: Etching, Chromium, Critical dimension metrology, Phase shifts, Photomasks, Diffractive optical elements, Dry etching, Fluorine, Manufacturing, Transmittance

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Proceedings Article | 27 December 2002 Paper

Characteristics of selective MoSiON etching in a chlorine plasma

Byung-Soo Chang, Dong-Soo Min, Hyuk-Joo Kwon, Boo-Yeon Choi

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467492

KEYWORDS: Etching, Chromium, Plasma, Glasses, Plasma etching, Chlorine, Ions, Chemistry, Fluorine, Electrodes

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Proceedings Article | 16 August 2002 Paper

Plasma etch of Cr masks utilizing TCP source for a next-generation plasma source

Hyuk-Joo Kwon, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Soo-Hong Jeong

Proceedings Volume 4764, (2002) https://doi.org/10.1117/12.479363

KEYWORDS: Chromium, Etching, Plasma, Photoresist materials, Photomasks, Manufacturing, Plasma etching, Inductance, Dry etching, Cadmium

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Proceedings Article | 1 August 2002 Paper

Highly anisotropic etching of phase-shift masks using ICP of CF4-SF6-CHF3 gas mixtures

Se-Jong Choi, Han-Sun Cha, Si-Yeul Yoon, Yong-Dae Kim, Dong-Hyuk Lee, Jin-Min Kim, Jin-Su Kim, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Hyuk-Joo Kwon, Boo-Yeon Choi, Sang-Soo Choi, Soo Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476984

KEYWORDS: Etching, Plasma, Photomasks, Phase shifts, Plasma etching, Gases, Chlorine, Scanning electron microscopy, Anisotropic etching, Surface roughness

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There is considerable interest in phase shift masks as a route to extending the resolution, contrast, and depth of focus of lithographic tools beyond what is achievable with the normal chrome mask technology. A problem that has so far hindered the introduction of phase shift masks has been the difficulty of phase and transmittance control when a phase shift mask is applied to practical use. Also, to apply phase shift layer (MoSiON), it remains that effects several critical mask parameters including sidewall slope, surface roughness, and critical dimension. For these reasons, this process requires a high degree of control of the etch process of shift layer. So in this paper, we described a technique for the fabrication of phase shift masks by etch rate of a MoSiON layer. Etching experiments of MoSiON were performed using different fluorinated gas mixtures. Four of them, CF₄/O₂/He, SF₆/O₂/He, CHF₃/O₂/He and Cl₂/CF₄/O2/He were chosen for high etch rate, sidewall slope, and surface morphology. Each added gases had a unique property on the etch rate, anisotropy, surface roughness and sidewall morphology. Result indicates that vertical slope and smooth surface are obtained using the Cl₂/ CF₄/O₂/He and SF₆/O₂/He mixture. With increasing O₂ flow rate to the SF₆/O₂/He Plasma and added Cl₂ gas to the CF₄/O₂/He Plasma, the MoSiON etching profile becomes anisotropic without undercutting and trench profile. It is probably due to both increasing etch rate and sidewall passivation of Cl₂ ion flux. When Cl₂ gas was added to the CF₄/O₂/He Plasma, the small addition of chlorine was enough to protect the exposed sidewall of the undercutting, therefore, higher flow rate of chlorine had to be added to protect the sidewall of the undercutting by forming a sidewall passivation layer. These results show that both increasing O₂ flow rate to the SF₆/O₂/He Plasma and the addition of Cl₂ to the CF₄/O₂/He plasma are necessary in order to achieve a vertical profile and a smooth surface morphology.

Proceedings Article | 1 August 2002 Paper

Applications of multiple-wavelength absorption endpoint system in photomask dry etcher

Dong-Soo Min, Pil-Jin Jang, Hyuk-Joo Kwon, Boo-Yeon Choi, Soo-Hong Jeong

Proceedings Volume 4754, (2002) https://doi.org/10.1117/12.476953

KEYWORDS: Chromium, Etching, Signal detection, Photomasks, Signal processing, Absorption, Plasma, Signal to noise ratio, Optics manufacturing, Dry etching

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Proceedings Article | 11 March 2002 Paper

Loading effect parameters of dry etcher system and their analysis in mask-to-mask loading and within mask loading

Hyuk-Joo Kwon, Dong-Soo Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Soo-Hong Jeong

Proceedings Volume 4562, (2002) https://doi.org/10.1117/12.458353

KEYWORDS: Chromium, Etching, Photoresist materials, Ions, Oxygen, Dry etching, Plasma, Photomasks, Binary data, Cadmium

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Proceedings Article | 5 September 2001 Paper

Dry etching of Cr layer and its loading effect

Hyuk-Joo Kwon, D. Min, Pil-Jin Jang, Byung-Soo Chang, Boo-Yeon Choi, Kyung Park, Soo-Hong Jeong

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438355

KEYWORDS: Chromium, Etching, Oxygen, Photomasks, Critical dimension metrology, Plasma, Photoresist materials, Dry etching, Binary data, Ions

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Proceedings Article | 22 January 2001 Paper

Dry etching technology of Cr and MoSi layers using high-density plasma source

Hyuk-Joo Kwon, Kwang-Sik Oh, Byung-Soo Chang, Boo-Yeon Choi, Kyung-Ho Park, Soo-Hong Jeong

Proceedings Volume 4186, (2001) https://doi.org/10.1117/12.410733

KEYWORDS: Etching, Chromium, Plasma, Dry etching, Critical dimension metrology, Transmittance, Photoresist materials, Manufacturing, Photomasks, Anisotropic etching

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Proceedings Article | 19 July 2000 Paper

Applications of MICP source for next-generation photomask process

Hyuk-Joo Kwon, Byung-Soo Chang, Boo-Yeon Choi, Kyung Park, Soo-Hong Jeong

Proceedings Volume 4066, (2000) https://doi.org/10.1117/12.392028

KEYWORDS: Etching, Photomasks, Plasma, Chromium, Plasma etching, Plasma generation, Dry etching, Manufacturing, Wet etching, Reactive ion etching

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Showing 5 of 27 publications

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