Dr. Ian C. Sandall
at The Univ of Sheffield
SPIE Involvement:
Author
Publications (5)

PROCEEDINGS ARTICLE | October 31, 2014
Proc. SPIE. 9254, Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
KEYWORDS: Mid-IR, Indium arsenide, Gallium arsenide, Indium, Photodiodes, Diodes, Bismuth, Antimony, Surface finishing, Temperature metrology

PROCEEDINGS ARTICLE | March 22, 2007
Proc. SPIE. 6468, Physics and Simulation of Optoelectronic Devices XV
KEYWORDS: Indium gallium arsenide, Transparency, Gallium arsenide, Doping, Quantum dots, Laser damage threshold, Semiconducting wafers, Quantum dot lasers, Temperature metrology, Absorption

PROCEEDINGS ARTICLE | February 8, 2007
Proc. SPIE. 6485, Novel In-Plane Semiconductor Lasers VI
KEYWORDS: Quantum wells, Light emitting diodes, Data modeling, Electrons, Physics, Quantum dots, Semiconductor lasers, Excitons, Statistical modeling, Absorption

PROCEEDINGS ARTICLE | February 22, 2006
Proc. SPIE. 6133, Novel In-Plane Semiconductor Lasers V
KEYWORDS: Quantum wells, Transparency, Modulation, Gallium arsenide, Doping, Quantum dots, Semiconductor lasers, Laser damage threshold, Gallium, Absorption

PROCEEDINGS ARTICLE | April 1, 2005
Proc. SPIE. 5738, Novel In-Plane Semiconductor Lasers IV
KEYWORDS: Multilayers, Quantum wells, Gallium arsenide, Quantum dots, Semiconductor lasers, Transmission electron microscopy, Laser damage threshold, Gallium, Quantum dot lasers, Absorption

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