Dr. Ian C. Sandall
at The Univ of Sheffield
SPIE Involvement:
Author
Publications (5)

Proceedings Article | 31 October 2014
Proc. SPIE. 9254, Emerging Technologies in Security and Defence II; and Quantum-Physics-based Information Security III
KEYWORDS: Indium arsenide, Bismuth, Photodiodes, Mid-IR, Diodes, Gallium arsenide, Temperature metrology, Indium, Antimony, Surface finishing

Proceedings Article | 22 March 2007
Proc. SPIE. 6468, Physics and Simulation of Optoelectronic Devices XV
KEYWORDS: Absorption, Semiconducting wafers, Transparency, Quantum dots, Indium gallium arsenide, Quantum dot lasers, Gallium arsenide, Temperature metrology, Doping, Laser damage threshold

Proceedings Article | 8 February 2007
Proc. SPIE. 6485, Novel In-Plane Semiconductor Lasers VI
KEYWORDS: Electrons, Quantum wells, Quantum dots, Excitons, Light emitting diodes, Absorption, Statistical modeling, Data modeling, Physics, Semiconductor lasers

Proceedings Article | 22 February 2006
Proc. SPIE. 6133, Novel In-Plane Semiconductor Lasers V
KEYWORDS: Doping, Transparency, Absorption, Quantum dots, Modulation, Quantum wells, Laser damage threshold, Gallium, Semiconductor lasers, Gallium arsenide

Proceedings Article | 1 April 2005
Proc. SPIE. 5738, Novel In-Plane Semiconductor Lasers IV
KEYWORDS: Gallium arsenide, Absorption, Gallium, Quantum dots, Transmission electron microscopy, Quantum wells, Multilayers, Quantum dot lasers, Laser damage threshold, Semiconductor lasers

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