Numerical simulations are performed on the narrowing of transient linewidths of the absorption peaks of an ensemble of four-level atoms doped in a dispersive band-gap material. The atoms do not interact with each other. They are, however, interacting with a reservoir, due to which, the top two levels of the atoms decay to a pair of lower levels. A probe laser field is applied to study the absorption characteristics of the system. The density matrix method is used to calculate the photon yield for the absorption peak in order to observe linewidth narrowing. Numerical simulations are performed for SiC which is a dispersive polaritonic band-gap material. We have observed the occurrence of linewidth narrowing in SiC when the resonance energies lie within the bands. But when the resonance energy lies near the lower band edge of the polaritonic crystal, the narrowing disappears. On the other hand, when the resonance energy lies near the upper band edge, the narrowing of the linewidth remains as pronounced as before. Moreover, we have found that the photon yield is very sensitive to the locations of the resonance energies within the band. These unusual properties can be used to make new types of photonic devices such as switches, gates, etc. Similar results are also found in photonic band-gap materials.