The results of the study of the polariton mechanism of microstructuring of silicon in near-IR range during irradiation by
picosecond laser pulses are presented to discussion. The experimental results of influence of laser pulses (1064 nm, 33
ps) on silicon in the dependence of laser energy, focusing conditions and number of pulses, as well as numerical
modeling of conditions of excitation of the surface polaritons are presented. Low probability of surface polaritons
excitation during picosecond laser irradiation is shown.