Mr. Ijen L. van Mil Profile

Ijen L. van Mil

at ASML Netherlands BV

SPIE Involvement:

Author

Publications (6)

Proceedings Article | 13 June 2022 Presentation

KrF Multi-focal imaging system for advanced and legacy applications

Will Conley, G. Padmabandu, Yzzer Roman, Yingbo Zhao, Toufiq Aman, James Bonafede, Emmanuel Rausa, Rasmus Nielsen, Ijen van Mil, Rongkuo Zhao

Proceedings Volume PC12051, PC120510B (2022) https://doi.org/10.1117/12.2615263

KEYWORDS: Imaging systems, Process control, Photoresist materials, Lithography, 3D image processing, Semiconducting wafers, Scanners, Overlay metrology, Optical lithography, Image processing

Read Abstract +

Proceedings Article | 26 May 2022 Poster + Presentation + Paper

Advanced dose control using random logic device patterns and massive metrology in a foundry high-volume manufacturing environment

Wen Zhan Zhou, Kan Zhou, Yu Yang Bian, Yu Zhang, Ijen van Mil, Robbin Zhu, Jo Zhu, Ivan Mao, Kai yuan Chi, Xuechen Zhu, Kelvin Pao, Pei Wang, Lilla Wang, Abdalmohsen Elmalk, Gary Zhang

Proceedings Volume 12053, 120532A (2022) https://doi.org/10.1117/12.2638430

KEYWORDS: Metrology, Semiconducting wafers, Control systems, Optical proximity correction, Logic devices, Reticles, Stochastic processes, High volume manufacturing, Finite element methods, Error analysis

Read Abstract +

One of the most critical challenges in the lithography process is to effectively control all critical patterns over the full exposure field, across wafer, and from lot to lot consistently. ASML’s advanced dose-control solutions have been widely adopted to control CDU of critical patterns. A new high-order dose-control capability is introduced with extended controllability over a larger number of patterns to mitigate the stochastic effect and optimize dies-in-spec performance. Traditionally, designed marks or patterns are placed in the die for dense metrology sampling required for the advanced high-order dose-control applications. However, this method has a few disadvantages especially for logic foundry use cases. For example, the designed marks are often not identical to random logic critical patterns, thus leading to a situation in which marks are controlled well while device patterns are not. In-die placement of the designed marks normally imposes constrains in device layout, which is not acceptable in some cases such as large-die layouts. A preferred approach would be to measure directly on device-critical and/or weak-point (WP) patterns. But this brings up another challenge in metrology of device WP patterns. With conventional CDSEM the amount of data points is limited by the tool throughput. WP patterns are typically 2D patterns, with normally a high noise contribution from local variations (due to resist stochastics) and metrology. Thus to suppress the local variations, averaging of many local measurements of 2D WP patterns is preferred. This requires a high throughput e-beam metrology tool capable of making massive amount of inline measurements within a given cycle time. To address these challenges, we have developed a method of using yield-limiting device patterns to directly control dose and thus improve CDU. Close to 100 WPs per in-die location have been selected with a dense die coverage to minimize the contribution to global CDU from the local variations and metrology noise. A high-speed e-beam metrology tool is used to measure all the selected WP patterns. A CDU budget breakdown (BB) has been analyzed to identify and quantify CDU contributors, such as reticle fingerprint, OPC error, local CDU, metrology noise, etc. Different in-die WP sampling and dose-control methods are studied in this work to achieve optimal CDU correction while keeping the metrology cycle time under control for HVM implementation.

Proceedings Article | 18 March 2019 Presentation

Quantifying global and local CD variation for an advanced 3D NAND layer (Conference Presentation)

Will Conley, Yaobin Feng, Zhiyang Song, Moran Guo, Jun He, Longxia Guo, Gang Xu, Simon Hsieh, James Bonafede, Stephen Hsu, Austin Peng, Jun Wei Lu, Victor Peng, Beeri Nativ, Fei Jia, Herman Nicolai, Ijen van Mil

Proceedings Volume 10961, 109610J (2019) https://doi.org/10.1117/12.2515725

KEYWORDS: Critical dimension metrology, Light sources, Semiconducting wafers, Yield improvement, Deep ultraviolet, Scanners, Control systems, Source mask optimization

Read Abstract +

Proceedings Article | 17 April 2014 Paper

Progress on EUV pellicle development

Carmen Zoldesi, Kursat Bal, Brian Blum, Guus Bock, Derk Brouns, Florian Dhalluin, Nina Dziomkina, Juan Diego Arias Espinoza, Joost de Hoogh, Silvester Houweling, Maarten Jansen, Mohammad Kamali, Alain Kempa, Ronald Kox, Robert de Kruif, Jorge Lima, Yang Liu, Henk Meijer, Hans Meiling, Ijen van Mil, Marco Reijnen, Luigi Scaccabarozzi, Daniel Smith, Beatrijs Verbrugge, Laurens de Winters, Xugang Xiong, John Zimmerman

Proceedings Volume 9048, 90481N (2014) https://doi.org/10.1117/12.2049276

KEYWORDS: Pellicles, Extreme ultraviolet, Semiconducting wafers, Reticles, Prototyping, Silicon, Manufacturing, Particles, Critical dimension metrology, Protactinium

Read Abstract +

Proceedings Article | 2 April 2011 Paper

Scanning exposures with a MAPPER multibeam system

C. van den Berg, G. de Boer, S. Boschker, E. Hakkennes, G. Holgate, M. Hoving, R. Jager, J. Koning, V. Kuiper, Yue Ma, I. van Mil, H. W. Mook, T. Ooms, T. van de Peut, S. Postma, M. Sanderse, P. Scheffers, E. Slot, A. Tudorie, A. M. Valkering, N. Venema, N. Vergeer, A. Weirsma, S. Woutersen, M. Wieland, B. Kampherbeek

Proceedings Volume 7970, 79700D (2011) https://doi.org/10.1117/12.881572

KEYWORDS: Interferometers, Electron beams, Optical testing, Semiconducting wafers, Error analysis, Lithography, Sensors, Wafer-level optics, Control systems, Chemically amplified resists

Read Abstract +

Proceedings Article | 23 February 2006 Paper

Optical quality assessment of rigid endoscopes during clinical lifetime

Herke Jan Noordmans, Ijen van Mil, Said Daoudi, Sander Kruit, Henk van den Brink, Rudolf Verdaasdonk

Proceedings Volume 6082, 60820H (2006) https://doi.org/10.1117/12.648497

KEYWORDS: Endoscopes, Optical fibers, Cameras, LCDs, Diodes, Image quality, Light emitting diodes, Databases, Optical testing, Imaging systems

Read Abstract +

Showing 5 of 6 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years