Dr. Ilan Ha Bloom Profile

Dr. Ilan Ha Bloom

at Saifun Semiconductors

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Proceedings Article | 9 May 2003 Paper

1/f noise mechanism suppression by periodical destruction of long characteristic times

Ilan Bloom

Proceedings Volume 5112, (2003) https://doi.org/10.1117/12.488464

KEYWORDS: Oxides, Silicon, Electrons, Interference (communication), Silver, Metals, Resistance, Switches, Resistors, Oscillators

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We study the influence of periodical interference pulses on the 1/f fluctuations of variety of systems showing 1/f noise. We show that in some cases, when interference pulses 'reset' the slow evolving 1/f noise mechanism, the magnitude of the noise is suppressed. We demonstrate it on both mechanisms that fluctuate at quasi-equilibrium, as well as on a dynamically driven 1/f noise mechanisms. Furthermore: by using voltage as the interference pulses, we are able to set a new classification for the 1/f noise mechanism in resistive disordered systems. The technique can detect bias dependent current paths rearrangement. Although it is known that in resistive systems the 1/f noise comes from equilibrium local resistance fluctuations that are bias independent, we show that in some such systems, applying different bias changes the set of perculative current paths, resulting in a 1/f noise signature that comes from a new set of local fluctuators.

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