This work shows the results of studies on the effect of annealing on the properties of nanocrystalline LiNbO3 films. Unannealed LiNbO3 films are characterized by the formation of triangular grains and large droplets on the film surface. It has been shown that annealing in an oxygen atmosphere leads to significantly reducing the surface roughness of the films (from 63 to 47 nm) and the density of droplets on the LiNbO3 film surface. It was established that annealing within 1 hour in oxygen atmosphere under temperature of 600°C allows increasing oxygen content in the film from 4.03 atm. % up to 11.02 atm. %. Using annealing made it possible to reduce the maximum value of absorption rate from 1.11 to 0.29. Obtained results can be used under development of energy converters and acousto-optic devices for use in electronics and medicine.
Low temperature etching of organosilicate low-k dielectrics in CF3Br and CF4 plasmas is studied. Chemical composition if pristine film and etched were measured by FTIR. Decrease in plasma-induced damage under low-temperature conditions is observed. It is shown that the plasma damage reduction is related to accumulation of reaction products. The reaction products could be removed by thermal bake. In the case of CF4 plasma, the thickness of CFx polymer increases with the temperature reduction. This polymer layer leads to strong decrease of diffusion rate of fluorine atoms and as a consequence to reduction of plasma-induced damage (PID). Bromine containing reaction products are less efficient for low-k surface protection against the plasma damage.
Atomic layer deposition (ALD) of Al2O3 on Si and AlGaN substrates was studied in situ by means of spectral ellipsometry. Method was used for optimization of process of atomic layer deposition. Optical model takes into account all layers of transparent structure typical for gallium nitride devices Al2O3/AlGaN/AlN/GaN. Developed model is able to measure in situ temperature of wafer before the process and its change during the deposition which is critical for development of new process and understanding of chemical reactions. Difference in temperature between chuck and sample were calculated. Spectral ellipsometry was used to determine initial nucleation lag of film growth which is different on silicon and AlGaN surface and chemical transient during the first steps of deposition. Removal of native oxide in AlGaN structures could play key role in observed effects of passivation GaN transistor structures by alumina.
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