Dr. Irene You. Popova Profile

Dr. Irene You. Popova

at IBM Corp

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Author

Publications (10)

Proceedings Article | 16 April 2011 Paper

Critical challenges for non-critical layers

J. M. Gomez, I. Popova, B. Zhang, H. Kry, S. Holmes, S. Nakagawa, T. Murakami, Chan Sam Chang, Cheol Kim

Proceedings Volume 7972, 79722T (2011) https://doi.org/10.1117/12.879866

KEYWORDS: Photoresist processing, Lithography, Germanium, Photomasks, Semiconducting wafers, Critical dimension metrology, Tolerancing, Reflectivity, Etching, Scanners

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Proceedings Article | 16 April 2011 Paper

Developable BARC (DBARC) technology as a solution to today's implant lithography challenges

James Cameron, Jin Wuk Sung, Sabrina Wong, Adam Ware, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Steve Holmes, Irene Popova, Ranee Kwong, Pushkara Rao Varanasi

Proceedings Volume 7972, 797214 (2011) https://doi.org/10.1117/12.881614

KEYWORDS: Lithography, Optical lithography, Control systems, Reflectivity, Coating, Photoresist processing, Antireflective coatings, Etching, Standards development, Bottom antireflective coatings

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Proceedings Article | 25 September 2010 Paper

Substrate aware OPC rules for edge effect in block levels

Dongbing Shao, Todd Bailey, Ian Stobert, Irene Popova, Chan Sam Chang

Proceedings Volume 7823, 78233U (2010) https://doi.org/10.1117/12.865134

KEYWORDS: Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Silicon, Data modeling, Photomasks, Calibration, Printing, Reflectivity, Photoresist processing

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Proceedings Article | 26 March 2010 Paper

Design and development of production-worthy developable BARCs(DBARCs) for implant lithography

James Cameron, John Amara, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Hiroaki Kitaguchi, Libor Vyklicky, Irene Popova, Pushkara Varanasi

Proceedings Volume 7639, 76390H (2010) https://doi.org/10.1117/12.846708

KEYWORDS: Semiconducting wafers, Oxides, Lithography, Silicon, Optical lithography, Resistance, Photoresist materials, Electroluminescence, Reflectivity, Critical dimension metrology

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Proceedings Article | 1 April 2009 Paper

Message to the undecided: using DUV dBARC for 32-nm node implants

Hyung-Rae Lee, Irene Popova, JoAnn Rolick, Juan-Manuel Gomez, Todd Bailey

Proceedings Volume 7273, 72730Y (2009) https://doi.org/10.1117/12.814269

KEYWORDS: Photoresist processing, Semiconducting wafers, Reflectivity, Optical proximity correction, Lithography, Photomasks, Line edge roughness, Process control, Critical dimension metrology, Etching

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In recent years, implant (block) level lithography has been transformed from being widely viewed as non-critical into one of the forefronts of material development. Ever-increasing list of substrates, coatings and films in the underlying stack clearly dictates the need for new materials and increased attention to this challenging area. Control of the substrate reflectivity and critical dimension (CD) on topography has become one of the key challenges for block level lithography and is required in order to meet their aggressive requirements for developing 32nm technology and beyond. The simulation results of wet-developable bottom anti-reflective coating (dBARC) show better reflectivity control on topography than the conventional top anti-reflective materials (TARCs), and make a convincing statement as to viability of dBARC as a working solution for block level lithography.1 Wet-developable BARC by definition offers substrate reflectivity and resist adhesion control, however there is a need to better understand the fundamental limitations of the dBARC process in comparison to the TARC process. In addition, some specific niche dBARC applications as facilitating adhesion to challenging substrates, such as capping layers in the high-k metal gate (HK/MG) stack, can also be envisioned as most imminent dBARC applications.2 However, most of the engineering community is still indecisive to use dBARC in production, bound by uncertainties of the robustness and lack of experience using dBARC in production. This work is designed to inspire more confidence in the potential use of this technology. Its objective is to describe testing of one of dBARC materials, which is not a photosensitive type, and its implementation on 32nm logic devices. The comparison between dBARC and TARC processes evaluates impacts of dBARC use in the lithographic process, with special attention to OPC behavior and reflectivity for controlling CD uniformity. This work also shows advantages and future challenges of dBARC process with several 248nm and 193nm resists on integrated wafers, which have shallow trench isolation (STI) and poly gate pattern topography.

Proceedings Article | 1 April 2009 Paper

Progress towards production worthy developable BARCs (DBARCs)

James Cameron, John Amara, Gregory Prokopowicz, Jin Wuk Sung, David Valeri, Adam Ware, Kevin O'Shea, Yoshihiro Yamamoto, Tomoki Kurihara, Libor Vyklicky, Wu-Song Huang, Irene Popova, Pushkara Rao Varanasi

Proceedings Volume 7273, 72733L (2009) https://doi.org/10.1117/12.814421

KEYWORDS: Lithography, Silicon, Etching, Standards development, Optical lithography, Reflectivity, Polymers, Carbon, Reflection, Photoresist materials

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Developable bottom anti-reflective coating (DBARC) technology holds promise in two main areas of lithography. The first application of DBARC is in implant lithography where patterning implant levels would greatly benefit from improved reflection control such as provided by a conventional BARC. However, implant layers cannot withstand BARC open etch thereby making DBARC an attractive solution as the resist and DBARC are simultaneously dissolved during the development step leaving the underlying substrate ready for implantation. In comparison to current implant processes with top anti-reflective coatings (TARC), DBARCs are anticipated to offer improvements in reflection control which would translate to improved CDU and increased process window for both KrF and ArF implants. Indeed, this area has long been considered the ideal insertion point for DBARC technology. The second area where DBARC technology can make a significant impact is in non-implant lithography. In this large segment, the ability to replace a conventional BARC with a DBARC affords the device maker the ability to simplify both lithographic and integration processes. By replacing the BARC with a DBARC, the BARC open etch is negated. Furthermore, by applying this strategy on multilayer stacks it is possible to greatly simplify the process by avoiding both CVD steps and pattern transfer steps thereby easing integration. In this area, DBARC technology could have merit for low k1 KrF and ArF (dry) lithography as well as in immersion ArF processes. This paper describes our results in designing production worthy DBARCs for both implant and non-implant applications. A newly developed KrF DBARC platform is evaluated for logic implant applications and compared to a standard TARC implant process. Post develop residue and defectivity are checked for the new platform and the results compared to production worthy BARC and implant resists. A new ArF platform was also developed and initial lithographic results are reported for an implant application. Several non-implant applications were also investigated and results are reported for high resolution KrF and ArF (dry) lithography as well as an immersion ArF process.

Proceedings Article | 15 April 2008 Paper

A new class of low bake resists for 193-nm immersion lithography

Ratnam Sooriyakumaran, Richard DiPietro, Hoa Truong, Phillip Brock, Robert Allen, Luisa Bozano, Irene Popova, Wu-Song Huang, Rex Chen, Mahmoud Khojasteh, Pushkara Rao Varanasi

Proceedings Volume 6923, 69230C (2008) https://doi.org/10.1117/12.772947

KEYWORDS: Polymers, Immersion lithography, Diffusion, Image processing, 193nm lithography, Lithography, Chemically amplified resists, Humidity, Photoresist processing, Standards development

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Proceedings Article | 9 April 2007 Paper

Building an immersion topcoat from the ground up: materials perspective

Mahmoud Khojasteh, Irene Popova, P. Rao Varanasi, Linda Sundberg, C. Robinson, D. Corliss, Margaret Lawson, G. Dabbagh, M. Slezak, Matthew Colburn, K. Petrillo

Proceedings Volume 6519, 651907 (2007) https://doi.org/10.1117/12.712095

KEYWORDS: Thin film coatings, Polymers, Polymer thin films, Lithography, Immersion lithography, Solids, Photoresist processing, Scanners, Scanning electron microscopy, Statistical analysis

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Proceedings Article | 2 April 2007 Paper

Evaluation of ArF lithography for 45-nm node implant layers

T. Bailey, J. Maynollo, J. J. Perez, I. Popova, B. Zhang

Proceedings Volume 6519, 65190S (2007) https://doi.org/10.1117/12.712318

KEYWORDS: Head-mounted displays, Reflectivity, Semiconducting wafers, Silicon, Lithography, Critical dimension metrology, Ozone, Oxides, Photoresist processing, Atomic force microscopy

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Proceedings Article | 23 March 2007 Paper

High-performance 193-nm photoresists based on fluorosulfonamide

Wenjie Li, Kuang-Jung Chen, Ranee Kwong, Margaret Lawson, Mahmoud Khojasteh, Irene Popova, P. Rao Varanasi, Tsutomu Shimokawa, Yoshikazu Yamaguchi, Shiro Kusumoto, Makoto Sugiura, Takanori Kawakami, Mark Slezak, Gary Dabbagh, Zhi Liu

Proceedings Volume 6519, 65190F (2007) https://doi.org/10.1117/12.712231

KEYWORDS: Polymers, Etching, Fluorine, Resistance, Lithography, Immersion lithography, 193nm lithography, Chemical species, Photoresist materials, Lithographic illumination

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Showing 5 of 10 publications

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