Dr. Ivan Pollentier Profile

Dr. Ivan Pollentier

Process Engineer Lithography at IMEC

SPIE Involvement:

Author

Publications (42)

PROCEEDINGS ARTICLE | April 23, 2018

CNTs in the context of EUV pellicle history

Proc. SPIE. 10583, Extreme Ultraviolet (EUV) Lithography IX

KEYWORDS: Scattering, Scanners, Particles, Silicon, Hydrogen, Pellicles, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 19, 2018

Unraveling the role of photons and electrons upon their chemical interaction with photoresist during EUV exposure

Proc. SPIE. 10586, Advances in Patterning Materials and Processes XXXV

KEYWORDS: Polymers, Photons, Electrons, Chemistry, Photoresist materials, Polymerization, Extreme ultraviolet, Chemical analysis, Extreme ultraviolet lithography, Chemical reactions

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The interaction of 91.6 eV EUV photons with photoresist – in particular chemically amplified resist (CAR) – is different than exposure at 193 nm and 248 nm wavelengths. The latter is understood well and it is known that photons interact with electrons in the resist’s molecular valence orbitals (for chemically amplified resist (CAR) the photon interacts with the photo acid generator (PAG), which leads to a deprotection reaction on a polymer after a thermal catalytic reaction during a post-exposure-bake.). At EUV however, more steps are involved in the radiolysis process between the absorption of the photon and the final chemical modification. These are related to the generation of primary electrons and their decay to lower energy secondary electrons, and most of this steps are not well understood. In this paper, the reaction products from EUV and low energy electron exposure are examined using Residual Gas Analysis (RGA), which measures and analyzes the outgassing products related to the ongoing reactions. This investigation is applied firstly on a model CAR where details of the resist chemical constituents were known prior to testing. The measurement not only resolved information on the expected acid related reactions from the PAG and protection groups, but also exhibited direct scission reactions of the polymer, where some of them lead to polymerization reactions. Moreover, the measurement quantifies the balance between the different ongoing reactions, which were confirmed by contrast curve measurements. Based on learnings on the model resist, applied the measurement technique to commercial resists, where actual resist chemistry composition is not known. Despite that, it was found that information could be deduced to distinguish between acid related ongoing reactions and direct scission of reaction on the base polymer and quantify their relation. Moreover, different generations of commercial resists based on similar chemistry platform were investigated, which revealed that improvements in printing performance could be explained by PAG reaction yield increase.

PROCEEDINGS ARTICLE | October 16, 2017

Unraveling the role of secondary electrons upon their interaction with photoresist during EUV exposure

Proc. SPIE. 10450, International Conference on Extreme Ultraviolet Lithography 2017

KEYWORDS: Lithography, Deep ultraviolet, Polymers, Photons, Electrons, Photoresist materials, Extreme ultraviolet, Chemical analysis, Extreme ultraviolet lithography, Chemical reactions

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PROCEEDINGS ARTICLE | October 16, 2017

Characterization of pellicle membranes by lab-based spectroscopic reflectance and transmittance measurements in the extreme ultraviolet

Proc. SPIE. 10450, International Conference on Extreme Ultraviolet Lithography 2017

KEYWORDS: Mirrors, Spectroscopy, Silicon, Reflectivity, Pellicles, Reflectometry, Transmittance, Extreme ultraviolet, Reflectance spectroscopy, Carbon nanotubes

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PROCEEDINGS ARTICLE | October 16, 2017

CNT EUV pellicle: moving towards a full-size solution

Proc. SPIE. 10451, Photomask Technology

KEYWORDS: Thin films, Reticles, Scanners, Particles, Coating, Resistance, Pellicles, Extreme ultraviolet, Extreme ultraviolet lithography, Carbon nanotubes

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PROCEEDINGS ARTICLE | October 16, 2017

EUV optical characterization of alternative membrane materials for EUV pellicles

Proc. SPIE. 10451, Photomask Technology

KEYWORDS: Wafer-level optics, Carbon, Particles, Reflectivity, Pellicles, Transmittance, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, EUV optics

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PROCEEDINGS ARTICLE | March 24, 2017

Novel membrane solutions for the EUV pellicle: better or not?

Proc. SPIE. 10143, Extreme Ultraviolet (EUV) Lithography VIII

KEYWORDS: Lithography, Scanners, Hydrogen, Coating, Pellicles, Solids, Extreme ultraviolet, Extreme ultraviolet lithography, High volume manufacturing, Absorption, Carbon nanotubes

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PROCEEDINGS ARTICLE | October 25, 2016

Introducing the EUV CNT pellicle

Proc. SPIE. 9985, Photomask Technology 2016

KEYWORDS: Carbon, Scanners, Silicon, Pellicles, Finite element methods, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Molybdenum, Carbon nanotubes

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PROCEEDINGS ARTICLE | March 18, 2016

EUV lithography imaging using novel pellicle membranes

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Carbon, Scattering, Graphene, Etching, Particles, 3D modeling, Pellicles, Photomasks, Extreme ultraviolet, Directed self assembly, Extreme ultraviolet lithography, High volume manufacturing, Semiconducting wafers, 193nm lithography, Absorption, Carbon nanotubes

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PROCEEDINGS ARTICLE | March 18, 2016

Novel metal containing resists for EUV lithography extendibility

Proc. SPIE. 9776, Extreme Ultraviolet (EUV) Lithography VII

KEYWORDS: Oxides, Lithography, Optical lithography, Contamination, Nanoparticles, Metals, Manufacturing, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | October 23, 2015

Properties and performance of EUVL pellicle membranes

Proc. SPIE. 9635, Photomask Technology 2015

KEYWORDS: Carbon, Etching, Scanners, Particles, Silicon, Manufacturing, Pellicles, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, High volume manufacturing, Semiconducting wafers, 193nm lithography

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PROCEEDINGS ARTICLE | March 13, 2015

Collaborative work on reducing the intersite gaps in outgassing qualification

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Lithography, Electron beams, Contamination, Molecules, Extreme ultraviolet, Extreme ultraviolet lithography, Picosecond phenomena, Semiconducting wafers, Standards development, Temperature metrology

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PROCEEDINGS ARTICLE | July 28, 2014

Towards reduced impact of EUV mask defectivity on wafer

Proc. SPIE. 9256, Photomask and Next-Generation Lithography Mask Technology XXI

KEYWORDS: Reticles, Scanners, Particles, Inspection, Printing, Photomasks, Extreme ultraviolet, Bismuth, Extreme ultraviolet lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | April 17, 2014

Relationship between resist outgassing and EUV witness sample contamination in NXE outgas qualification using electrons and EUV photons

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Contamination, Calibration, Photons, Electrons, Fourier transforms, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, Resist chemistry

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PROCEEDINGS ARTICLE | April 1, 2013

Relationship between resist related outgassing and witness sample contamination in the NXE outgas qualification using electrons and EUV

Proc. SPIE. 8679, Extreme Ultraviolet (EUV) Lithography IV

KEYWORDS: Mirrors, Contamination, Photons, Electrons, Photoresist materials, Extreme ultraviolet, Beam shaping, Extreme ultraviolet lithography, Semiconducting wafers, EUV optics

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EUV photoresists are considered as a potential source of optics contamination, since they introduce irradiation induced outgassing in the EUV vacuum environment. Therefore, before these resists can be used on e.g. ASML NXE:3100 or NXE:3300, they need to be tested in dedicated equipment according to a well-defined procedure, which is based on exposing a witness sample (WS) in the vicinity of a simultaneously exposed resist as it outgasses. Such an outgassing test infrastructure is available at many sites, but exposure modes on the witness sample and wafer can be significantly different, which potentially could lead to different test results. In this investigation, we first explored in more detail the relationship between resist outgassing as measured by RGA (Residual Gas Analysis) and the carbon growth obtained in the WS test. A good correlation was found by using a timeintegrated and mass-weighted sum of the RGA-measured mass peaks. Next, the impact of the resist exposure mode on the WS contamination result was investigated at imec, where the outgas test setup allows to expose the wafer with EUV irradiation as well as electrons in the same vacuum environment. It was found that minor differences observed in the WS test results, can be explained by adequate characterization of exposure intensity distribution and dose control. Finally the WS test results at imec from the different exposure modes were compared to the test results at NIST. The small differences in contamination that were observed could be explained by differences in test procedure, by using the time dependent RGA approach. From the combined work on outgassing measurements and WS contamination testing we have significantly improved our understanding of the relationship between outgassing and contamination processes induced by EUV photons and electrons. We have also demonstrated how to compare results obtained at different outgas testing sites, which is important in quantifying the potential risk to EUV device manufacturing posed by resist outgassing.

SPIE Journal Paper | July 10, 2012

Frequency multiplication of lamellar phase block copolymers with grapho-epitaxy directed self-assembly sensitivity to prepattern

Gronheid, Roel , Rincon Delgadillo, Paulina , Pollentier, Ivan , Nealey, Paul , Younkin, Todd , Somervell, Mark , Hooge, Joshua , Nafus, Kathleen

JM3 Vol. 11 Issue 3

KEYWORDS: Scanning electron microscopy, Semiconducting wafers, Optical lithography, Reticles, Image processing, Coating, Photoresist processing, Photomasks, Photoresist materials, Directed self assembly

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PROCEEDINGS ARTICLE | March 20, 2012

Patterning development in spin-on hard mask systems for 30nm half-pitch EUV technology

Proc. SPIE. 8325, Advances in Resist Materials and Processing Technology XXIX

KEYWORDS: Optical lithography, Etching, Polymers, Glasses, Photoresist materials, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, System on a chip

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As Extreme Ultra Violet technology (EUV) is being introduced, multilayer hard mask patterning becomes a key option in order to transfer the lithographic patterns into the circuit stack. In particular, spin-on multilayers can play a decisive role on the process roadmap as a more cost-effective solution than Chemical Vapour Deposition options. The integration of spin-on hard masks in EUV technology nevertheless requires these products to be EUV-outgassing friendly. In addition to this, the spin-on solutions must withstand the demanding photoresist and circuit stack aspect ratios during patterning. This paper presents the EUV process development for contacted metal lines with 30nm half-pitch dimensions in a dual damascene application. The performance of an all-spin-on multilayer system composed of an EUVphotosensitive layer, an organic underlayer, a silicon-rich middle layer and a carbon-rich bottom layer is demonstrated. Firstly, outgassing of the various polymer layers in vacuum is a critical parameter to control since it can directly impact the EUV-tool-optics lifetime. The qualification, selection and process optimisation of different materials for use in the ASML NXE:3100 EUV scanner are shown by interpreting Residual Gas Analysis data. The outgassed species for different types of layers are compared. In this study, the shielding effect of the top layers on the outgassing of the layers underneath is quantified. The influence of the layer composition is also discussed. Secondly, the lithographic performance of the 30nm half-pitch process on the NXE:3100 is characterized with process windows and profile control using the IMEC process-of-reference. The CD uniformity results within wafer and across wafer-batches are used to demonstrate the process maturity. Finally, considering the patternability of the EUV process, we demonstrate the ability of the all-spin-on multilayer system to planarize over the challenging dual damascene topography. To conclude on the potential of this scheme, we describe the etched dual damascene patterns into a dielectric stack which is representative for the 30nm half pitch technology node.

PROCEEDINGS ARTICLE | April 16, 2011

Assessment of resist outgassing related EUV optics contamination for CAR and non-CAR material chemistries

Proc. SPIE. 7972, Advances in Resist Materials and Processing Technology XXVIII

KEYWORDS: Contamination, Polymers, Chemistry, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Medium wave, Optics manufacturing, Resist chemistry, EUV optics

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EUV lithography is expected to be the key lithography option for sub-22nm device manufacturing. In order to meet the required imaging capability, resist performance improvements are being investigated by exploring both chemically amplified resists (CAR) and non-CAR chemistries. Another critical item related to resist chemistry is the EUV irradiation induced outgassing and its risk for optics contamination, especially towards high source power (pre-) productions tools. In this area it is important to characterize for the different chemistries which resist components are critical for EUV induced outgassing and - more important - which can result in non-cleanable mirror contamination. In this paper, we will explore the outgassing and contamination behavior of CAR and non-CAR resist by using Residual Gas Analysis (RGA) for identifying the resist outgassing characteristics, and by Witness Sample (WS) testing to evaluate the tendency for contamination. For CAR resists, it has been found that the PAG cation is a key component contributing to the contamination, but its impact can be changed by changing the resist formulation. In this investigation several model resists have been evaluated in order to understand which chemical components have - or don't have - an impact on the contamination. This has led to a proposal of a definition for a resist family. For non-CAR materials, the investigation has focused to a number of example resists. Most results are related to poly(-olefin sulfones), which have been proven to be good candidate materials for outgassing and contamination learning. The tests have confirmed that aromatic groups present in resist outgassing are playing an important role. As an opposite example of non-CAR material, the inorganic Inpria resist was tested, which revealed that its resist outgassing (water and oxygen) can remove carbon contamination. The combined work on CAR and non-CAR outgassing and contamination has learned significantly on the relationship between resist chemistry, its outgassing and contamination, and provided understanding on how to design good performing EUV resists with minimal risk for optics contamination in EUV device manufacturing.

PROCEEDINGS ARTICLE | April 8, 2011

Unraveling the effect of resist composition on EUV optics contamination

Proc. SPIE. 7969, Extreme Ultraviolet (EUV) Lithography II

KEYWORDS: Contamination, Polymers, Chemistry, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Medium wave, Semiconducting wafers, Resist chemistry, EUV optics

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PROCEEDINGS ARTICLE | March 23, 2010

Characterization of EUV optics contamination due to photoresist related outgassing

Proc. SPIE. 7636, Extreme Ultraviolet (EUV) Lithography

KEYWORDS: Carbon, Ellipsometry, Contamination, Photons, Sulfur, Photoresist materials, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers, EUV optics

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PROCEEDINGS ARTICLE | March 18, 2009

Measurement and analysis of EUV photoresist related outgassing and contamination

Proc. SPIE. 7271, Alternative Lithographic Technologies

KEYWORDS: Ellipsometry, Mirrors, Metrology, Contamination, Photoresist materials, Reflectometry, Time metrology, Extreme ultraviolet, Extreme ultraviolet lithography, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 28, 2008

Dependence of EUV mask printing performance on blank architecture

Proc. SPIE. 6921, Emerging Lithographic Technologies XII

KEYWORDS: Carbon, Reticles, Silicon, Reflectivity, Printing, Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Ruthenium, Oxidation

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PROCEEDINGS ARTICLE | April 5, 2007

Innovative metrology for wafer edge defectivity in immersion lithography

Proc. SPIE. 6518, Metrology, Inspection, and Process Control for Microlithography XXI

KEYWORDS: Metrology, Imaging systems, Scanners, Inspection, Scanning electron microscopy, Immersion lithography, Photoresist processing, Semiconducting wafers, Laser optics, Wafer manufacturing

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PROCEEDINGS ARTICLE | March 29, 2006

Top coat or no top coat for immersion lithography?

Proc. SPIE. 6153, Advances in Resist Technology and Processing XXIII

KEYWORDS: Water, Scanners, Particles, Digital watermarking, Scatterometry, Photomasks, Immersion lithography, Critical dimension metrology, Thin film coatings, Semiconducting wafers

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Since the moment immersion lithography appeared in the roadmaps of IC manufacturers, the question whether to use top coats has become one of the important topics for discussions. The top coats used in immersion lithography have proved to serve as good protectors from leaching of the resist components (PAGs, bases) into the water. However their application complicates the process and may lead to two side effects. First, top coats can affect the process window and resist profile depending on the material's refractive index, thickness, acidity, chemical interaction with the resist and the soaking time. Second, the top coat application may increase the total amount of defects on the wafer. Having an immersion resist which could work without the top coat would be a preferable solution. Still, it is quite challenging to make such a resist as direct water/resist interaction may also result in process window changes, CD variations, generation of additional defects. We have performed a systematic evaluation of a large number of immersion resist and top coat combinations, using the ASML XT:1250Di scanner at IMEC. The samples for the experiments were provided by all the leading resist and top coat suppliers. Particular attention was paid to how the resist and top coat materials from different vendors interacted with each other. Among the factors which could influence the total amount of defects or CD variations on the wafer were: the material's dynamic contact angle and its interaction with the scanner stage speed, top coat thickness and intermixing layer formation, water uptake and leaching. We have examined the importance of all mentioned factors, using such analytical techniques as Resist Development Analyser (RDA), Quartz Crystal Microbalance (QCM), Mass Spectroscopy (MS) and scatterometry. We have also evaluated the influence of the pre- and pos- exposure rinse processes on the defectivity. In this paper we will present the data on imaging and defectivity performance of the resists with and without the use of top coats. So far we can conclude that top coat/resist approach used in immersion lithography needs some more improvements (i.e. process, materials properties) in order to be implemented in high volume manufacturing.

PROCEEDINGS ARTICLE | March 24, 2006

Comprehensive approach to MuGFET metrology

Proc. SPIE. 6152, Metrology, Inspection, and Process Control for Microlithography XX

KEYWORDS: Oxides, Metrology, Calibration, Silicon, Transmission electron microscopy, Scatterometry, 3D metrology, Line width roughness, Optical proximity correction, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 15, 2006

Immersion effects on lithography system performance

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Lithography, Reticles, Scanners, Scatterometry, Immersion lithography, Thin film coatings, Semiconducting wafers, Scatter measurement, Overlay metrology, Temperature metrology

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The immersion effects on lithography-system performance have been investigated using a ASML TWINSCAN XT:1250Di immersion-ArF scanner (NA=0.85) and Tokyo Electron CLEAN TRACK ACT12 at IMEC. Effects of immersion-induced-temperature change and effects of material-top surface are discussed in this paper. The wafer-stage temperature is measured during the leveling-verification tests and compared with the observed residual-focus-error change. The results indicate that stage-temperature change under an immersion environment can induce a focus change. In this paper, it was proved that the improved-temperature-control stage is effective to mitigate the immersion-specific focus change. The immersion effect on overlay is also investigated as a function of material top surface. It was demonstrated that the effect of material-receding-contact angles on the grid-residual errors (non-correctable errors) is small in the latest-immersion-hardware configuration of the scanner. However, there was a tendency that material with a smaller-receding-contact angle has a larger-wafer scaling although it is a correctable parameter. This can be caused by the first-layer wafer shrinkage due to more water evaporation on the more-hydrophilic surface. The immersion effect on scanner-dynamic performance is then investigated by changing the material-top surface and the scan speed of the scanner. It was turned out that the scan synchronization is not much affected by differences of material receding-contact-angles for the new configuration of the scanner. Moving-standard deviation of the synchronization error in scanning direction (y-direction) is slightly more affected by increased scanning speed, although it stays within specification even at a maximum scan speed of 500 mm/sec. Finally the immersion effects on resist-profile uniformity are examined. It was found that lower-leaching-film stacks (with a top coat or a lower leaching resist) seem to mitigate the variation of resist-profile uniformity.

PROCEEDINGS ARTICLE | May 24, 2004

Electrical linewidth metrology for sub-65-nm applications

Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII

KEYWORDS: Metrology, Calibration, Etching, Resistance, Scanning electron microscopy, Process control, Critical dimension metrology, Resistors, Semiconducting wafers, Tin

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PROCEEDINGS ARTICLE | May 24, 2004

Optimization of scatterometry parameters for shallow trench isolation (STI) monitor

Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII

KEYWORDS: Metrology, Etching, Silicon, Scanning electron microscopy, Scatterometry, Dysprosium, Critical dimension metrology, Semiconducting wafers, Scatter measurement, Single crystal X-ray diffraction

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PROCEEDINGS ARTICLE | May 24, 2004

Characterization of integrated optical CD for process control

Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII

KEYWORDS: Wafer-level optics, Semiconductors, Metrology, Cadmium, Scatterometry, Process control, Finite element methods, Integrated optics, Critical dimension metrology, Semiconducting wafers

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PROCEEDINGS ARTICLE | May 24, 2004

Effects of different processing conditions on line-edge roughness for 193-nm and 157-nm resists

Proc. SPIE. 5375, Metrology, Inspection, and Process Control for Microlithography XVIII

KEYWORDS: Metrology, Optical lithography, Statistical analysis, Spatial frequencies, Etching, Diffusion, Atomic force microscopy, Scanning electron microscopy, Line edge roughness, Edge roughness

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PROCEEDINGS ARTICLE | May 12, 2004

Resist profile control in immersion lithography using scatterometry measurements

Proc. SPIE. 5754, Optical Microlithography XVIII

KEYWORDS: Lithography, Scanners, Diffusion, Printing, Scatterometry, Immersion lithography, Critical dimension metrology, Photoresist processing, Semiconducting wafers, Scatter measurement

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Control of critical dimension (CD) and resist profile is increasingly important in low-k₁ lithography, and becomes more difficult in thin resist processing due to the chemical interaction occurring at the resist surfaces. Implementation of immersion lithography will make the control even more challenging since more sources of chemical interaction can play a role, e.g. leaching of photo active material from the resist into the water, or diffusion of the water into the resist. Moreover, the contact of the liquid in the scanner showerhead with the wafer surface is a dynamic and local interaction, which needs to be understood and quantified, since variations in soak time are a possible source of intra-field and across wafer CD-variations. In this paper we developed a methodology to understand and to quantify the impact of immersion scanner soak on resist profile control and CD-control. The methodology is on the one hand based on the simulation of the showerhead movements over the wafer during the immersion lithography process, where for a particular location on the wafer the soak time is calculated by accumulating the interaction time every time the showerhead is passing that particular location. On the other hand the methodology quantifies experimentally how much resist profile change and CD-variation is caused by a particular pre- and post-soak time, by testing the process in a virtual immersion set-up and measuring the CD-response with high-precision scatterometry. In this way, we were able to predict CD-variations related to immersion soak. Using the initial resist and topcoat processes, we recently experimentally verified on the ASML XT:1250Di immersion tool at IMEC that these soak related CD-variations exist. The effects are small, but in line with the soak time simulations and the CD-response obtained on the virtual immersion set-up. This demonstrates that the methodology described above could be very useful to select materials for lithography processes and to set specifications for allowed CD-variations in line with to the over-all allowed CD-budget.

PROCEEDINGS ARTICLE | April 29, 2004

In-line lithography cluster monitoring and control using integrated scatterometry

Proc. SPIE. 5378, Data Analysis and Modeling for Process Control

KEYWORDS: Lithography, Metrology, Control systems, Scatterometry, Time metrology, Process control, Finite element methods, Critical dimension metrology, Semiconducting wafers, 193nm lithography

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PROCEEDINGS ARTICLE | June 2, 2003

Line-edge roughness reduction and CD slimming using hardbake processing

Proc. SPIE. 5038, Metrology, Inspection, and Process Control for Microlithography XVII

KEYWORDS: Monochromatic aberrations, Optical lithography, Cadmium, Etching, Control systems, Scanning electron microscopy, Extreme ultraviolet, Transistors, Line edge roughness, 193nm lithography

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PROCEEDINGS ARTICLE | June 2, 2003

Characterization of overlay mark fidelity

Proc. SPIE. 5038, Metrology, Inspection, and Process Control for Microlithography XVII

KEYWORDS: Reticles, Metrology, Optical lithography, Statistical analysis, Error analysis, Silicon, Manufacturing, Semiconducting wafers, Overlay metrology, Chemical mechanical planarization

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In this publication we introduce a new metric for process robustness of overlay metrology in microelectronic manufacturing. By straightforward statistical analysis of overlay metrology measurements on an array of adjacent, nominally identical overlay targets the Overlay Mark Fidelity (OMF) can be estimated. We present the results of such measurements and analysis on various marks, which were patterned using a DUV scanner. The same reticle set was used to pattern wafers on different process layers and process conditions. By appropriate statistical analysis, the breakdown of the total OMF into a reticle-induced OMF component and a process induced OMF component was facilitated. We compare the OMF of traditional box-in-box overlay marks with that of new gratingbased overlay marks and show that in all cases the grating marks are superior. The reticle related OMF showed an improvement of 30 % when using the new grating-based overlay mark. Furthermore, in a series of wafers run through an STI-process with different Chemical Mechanical Polish (CMP) times, the random component of the OMF of the new grating-based overlay mark was observed to be 40% lower and 50% less sensitive to process variation compared with Box in Box marks. These two observations are interpreted as improved process robustness of the grating mark over box in box, specifically in terms of reduced site by site variations and reduced wafer to wafer variations as process conditions change over time. Overlay Mark Fidelity, as defined in this publication, is a source of overlay metrology uncertainty, which is statistically independent of the standard error contributors, i.e. precision, TIS variability, and tool to tool matching. Current overlay metrology budgeting practices do not take this into consideration when calculating total measurement uncertainty (TMU). It is proposed that this be reconsidered, given the tightness of overlay and overlay metrology budgets at the 70 nm design rule node and below.

PROCEEDINGS ARTICLE | June 2, 2003

Comparison of pattern placement errors as measured using traditional overlay targets and design rule structures

Proc. SPIE. 5038, Metrology, Inspection, and Process Control for Microlithography XVII

KEYWORDS: Wafer-level optics, Reticles, Metrology, Data modeling, Reliability, Scanning electron microscopy, Structural design, Semiconducting wafers, Overlay metrology, Personal protective equipment

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PROCEEDINGS ARTICLE | April 26, 2001

Lithography aspects of dual-damascene interconnect technology

Proc. SPIE. 4404, Lithography for Semiconductor Manufacturing II

KEYWORDS: Oxides, Lithography, Etching, Metals, Copper, Dielectrics, Reflectivity, Electroluminescence, Photomasks, Critical dimension metrology

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PROCEEDINGS ARTICLE | April 26, 2001

Front-end-of-line process development using 193-nm lithography

Proc. SPIE. 4404, Lithography for Semiconductor Manufacturing II

KEYWORDS: Lithography, Monochromatic aberrations, Etching, Manufacturing, Scanning electron microscopy, Head-mounted displays, Critical dimension metrology, Line edge roughness, Semiconducting wafers, 193nm lithography

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PROCEEDINGS ARTICLE | July 5, 2000

Status of ArF lithography for the 130-nm technology node

Proc. SPIE. 4000, Optical Microlithography XIII

KEYWORDS: Oxides, Lithography, Reticles, Lenses, Etching, Dry etching, Manufacturing, Photomasks, 193nm lithography, Resolution enhancement technologies

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PROCEEDINGS ARTICLE | July 26, 1999

Intrawafer CD control in state-of-the-art lithography

Proc. SPIE. 3679, Optical Microlithography XII

KEYWORDS: Lithography, Metrology, Deep ultraviolet, Etching, Chemistry, Critical dimension metrology, Photoresist processing, Semiconducting wafers, Photoresist developing, Standards development

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PROCEEDINGS ARTICLE | June 14, 1999

Role of LV-SEM reticle CD measurements on DUV lithography

Proc. SPIE. 3677, Metrology, Inspection, and Process Control for Microlithography XIII

KEYWORDS: Lithography, Reticles, Deep ultraviolet, Etching, Optical testing, Scanning electron microscopy, Photomasks, Critical dimension metrology, Algorithm development, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 1, 1991

Fabrication of high-radiance LEDs by epitaxial lift-off

Proc. SPIE. 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

KEYWORDS: Reflectors, Light emitting diodes, Reflection, Cladding, Interfaces, Gallium arsenide, Silicon, Resistance, Optoelectronic devices, Epitaxial lateral overgrowth

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PROCEEDINGS ARTICLE | March 1, 1991

Novel optoelectronic devices and integrated circuits using epitaxial lift-off

Proc. SPIE. 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization

KEYWORDS: Thin films, Optoelectronic devices, Integrated circuits, Photonic integrated circuits, Epitaxial lateral overgrowth

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