Dr. Ivar Tångring
Development Engineer - Epitaxy at
SPIE Involvement:
Author
Publications (1)

PROCEEDINGS ARTICLE | February 3, 2009
Proc. SPIE. 7230, Novel In-Plane Semiconductor Lasers VIII
KEYWORDS: Indium gallium arsenide, Quantum wells, Gallium arsenide, Silicon, Surface roughness, Doping, Aluminum, Epitaxy, Gallium, Molecular beam epitaxy

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