The work presents the results of a research carried out with Plasmalab Plus 100 system, manufactured by Oxford
Instruments Company. The system was configured for deposition of diamond-like carbon films by ICP PECVD method.
The deposition processes were carried out in CH<sub>4</sub> or CH<sub>4</sub>/H<sub>2</sub> atmosphere and the state of the plasma was investigated by
the OES method. The RF plasma was capacitively coupled by 13.56 MHz generator with supporting ICP generator
(13.56 Mhz). The deposition processes were conducted in constant value of RF generator’s power and resultant value of
the DC Bias. The power values of RF generator was set at 70 W and the power values of ICP generator was set at 300
W. In this work we focus on the influence of DLC film’s thickness on optical, electrical and structural properties of the
deposited DLC films. The quality of deposited DLC layers was examined by the Raman spectroscopy, AFM microscopy
and spectroscopic ellipsometry. In the investigated DLC films the calculated sp<sup>3</sup> content was ranging from 60 % to 70 %.
The films were characterized by the refractive index ranging from 2.03 to 2.1 and extinction coefficient ranging from
0.09 to 0.12.
Reactive magnetron sputtering technique using O<sub>2</sub>/Ar gas mixture was used to deposit Gd<sub>2</sub>O<sub>3</sub> layers. Following
metallization process of Al allowed to create MIS structures, which electrical parameters (κ, <i>D<sub>it</sub></i>, <i>U<sub>FB</sub></i>, ρ, etc.) were
measured using high frequency C-V equipment. Created layers exhibit high permittivity (κ≈12) at 100kHz. I-V
measurements point out on maximum electric break down field E<sub>br</sub>≈0.4 MV/cm and maximum break down voltage U<sub>br</sub> ≈
16V. Layers were morphologically tested using AFM technique (R<sub>a</sub> ≈ 0.5÷2nm). Layer thicknesses as well as refractive
indexes (RI ≈ 1.50÷2.05) were estimated using ellipsometry measurements.
Photonic quasi-crystal structures have been prepared and investigated. Symmetrical patterns were fabricated by
interference lithography in negative tone photoresist and transferred to silicon by reactive ion etching. Theoretical
influences of pattern detail (radius of hole) on the photonic band gap have been studied. Three types of 2D photonic
quasi-crystals have been prepared: 8-fold, 10-fold and 12-fold pattern. Finally, finite-difference time-domain method was
used for theoretically prediction of transmission spectrum for fabricated 12-fold quasi-crystal.