Wide gap II-VI semiconducting mixed crystals are extensively studied during the past few years as they are promising candidates for applications in construction photo and electrooptical devices operating in blue-green and UV spectral region. The high degree of covalent bonding of Be chalcogenides leads to increase of their lattice rigidity. For this reason, mixing of Be chalcogenides with other wide gap II-VI binary compounds would increase the resistance of the optoelectronic structure to defect generation and propagation.
The photoacoustic spectroscopy has been developed to investigate the thermal and optical properties of semiconductors since it is very sensitive and complementary method to the absorption and photoluminescence spectroscopy.
The modified Jackson - Amer model is used to interpret the obtained spectra for the piezoelectric photothermal technique. From the amplitude spectra of the piezoelectric signal, the method enables computation of the optical absorption coefficient spectra and estimation of the energy gap values of the investigated samples. It also enables the determination of the thermal diffusivity values of the samples from the analysis of the piezoelectric phase signal. In special cases, the multi-layer model, developed very recently, can be applied for the interpretation of experimental spectra.
The influence of the annealing process of II-VI samples in cation vapor on the amplitude photoacoustic spectra in the saturation region is shown and discussed. The values of the parameter <i>η</i> (efficiency of the nonradiative recombination processes) for both, as grown and annealed crystals were determined and discussed.