Dr. James M. Blackwell Profile

Dr. James M. Blackwell

at Intel Corp

SPIE Involvement:

Author

Publications (25)

Proceedings Article | 10 April 2024 Presentation

Presentation

Nanoscale molecular analysis with nano-projectile SIMS

Michael Eller, Brandon Holybee, Dmitriy Verkhoturov, Michael Shaw, Stanislav Verkhoturov, Blake Bluestein, Morgan Hazelbaker, Carly Rogan, Serge Della-Negra, James Blackwell, Emile Schweikert

Proceedings Volume 12955, 1295509 (2024) https://doi.org/10.1117/12.3011750

KEYWORDS: Silicon, Ions, Extreme ultraviolet, Chemical analysis, Ultraviolet radiation, Spectroscopy, Semiconductors, Photoacid generators, Photo decomposable quencher, Mass spectrometry

Read Abstract +

SPIE Journal Paper | 8 March 2024

Experimental characterization of model extreme ultraviolet resist materials

Oleg Kostko, Terry McAfee, Jonathan Ma, James Blackwell, Patrick Naulleau

JM3, Vol. 23, Issue 01, 014602, (March 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.1.014602

KEYWORDS: Electrons, Extreme ultraviolet, Polymers, Photons, Extreme ultraviolet lithography, Absorption, Signal attenuation, Photoemission spectroscopy, Film thickness, Signal intensity

Read Abstract +

SPIE Journal Paper | 28 November 2022

Nanometrology for evaluating rare sites for molecular homogeneity

Michael Eller, Jander Cruz, Stanislav Verkhoturov, Michael Robinson, James Blackwell, Emile Schweikert

JM3, Vol. 21, Issue 04, 044002, (November 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.044002

KEYWORDS: Photoacid generators, Ions, Statistical analysis, Extreme ultraviolet, Stochastic processes, Correlation coefficients, Molecules, Mass spectrometry, Photoresist materials, Chemical analysis

Read Abstract +

Proceedings Article | 11 November 2022 Presentation

Presentation

Evaluating the role of photoacid generator and quencher loadings on EUV film homogeneity

Michael Eller, Jander Cruz, Stanislav Verkhoturov, Michael Robinson, James Blackwell, Emile Schweikert

Proceedings Volume PC12292, PC122920J (2022) https://doi.org/10.1117/12.2641539

KEYWORDS: Extreme ultraviolet, Ions, Quenching (fluorescence), Stochastic processes, Spectroscopy, Semiconductors, Polymers, Mass spectrometry, Data analysis, Data acquisition

Read Abstract +

SPIE Journal Paper | 7 November 2022

Evaluating nanoscale molecular homogeneity in extreme ultraviolet resists with nanoprojectile secondary ion mass spectrometry

Jander Cruz, Stanislav Verkhoturov, Dmitriy Verkhoturov, Michael Robinson, James Blackwell, Michael Eller, Emile Schweikert

JM3, Vol. 21, Issue 04, 044001, (November 2022) https://doi.org/10.1117/12.10.1117/1.JMM.21.4.044001

KEYWORDS: Ions, Extreme ultraviolet, Polymers, Photoresist processing, Mass spectrometry, Stochastic processes, Diffusion, Molecular spectroscopy, Quenching (fluorescence), Gold

Read Abstract +

Proceedings Article | 25 May 2022 Presentation + Paper

Presentation + Paper

Nanometrology for evaluating rare sites for molecular homogeneity

Michael Eller, Jander Cruz, Stanislav Verkhorurov, Michael Robinson, James Blackwell, Emile Schweikert

Proceedings Volume 12055, 1205505 (2022) https://doi.org/10.1117/12.2612602

KEYWORDS: Ions, Statistical analysis, Stochastic processes, Molecules, Extreme ultraviolet, Photoresist materials, Mass spectrometry, Extreme ultraviolet lithography

Read Abstract +

Proceedings Article | 25 May 2022 Paper

Paper

Evaluating nanoscale molecular homogeneity in EUV resists with nano-projectile SIMS

Jander Cruz, Michael Eller, Stanislav Verkhoturov, Dmitriy Verkhoturov, Michael Robinson, James Blackwell, Emile Schweikert

Proceedings Volume 12055, 120550I (2022) https://doi.org/10.1117/12.2614059

KEYWORDS: Ions, Polymers, Extreme ultraviolet, Extreme ultraviolet lithography, Diffusion, Stochastic processes, Mass spectrometry

Read Abstract +

Proceedings Article | 25 October 2021 Presentation + Paper

Presentation + Paper

Experimental characterization of model resist materials

Oleg Kostko, Terry McAfee, Jonathan Ma, James Blackwell, Patrick Naulleau

Proceedings Volume 11854, 1185407 (2021) https://doi.org/10.1117/12.2600890

KEYWORDS: Electrons, Extreme ultraviolet, Absorption, Polymers, Extreme ultraviolet lithography, Signal attenuation, Mass attenuation coefficient, Polymer thin films, Photoemission spectroscopy, Semiconducting wafers

Read Abstract +

Proceedings Article | 5 May 2020 Paper

Paper

Modeling photon, electron, and chemical interactions in a model hafnium oxide nanocluster EUV photoresist

Patrick Theofanis, James Blackwell, Marie Krysak, Florian Gstrein

Proceedings Volume 11323, 113230I (2020) https://doi.org/10.1117/12.2552837

KEYWORDS: Photoresist materials, Hafnium, Monte Carlo methods, Scattering, Extreme ultraviolet lithography, Chemical species, Oxygen, Oxides, Carbon, Extreme ultraviolet

Read Abstract +

Proceedings Article | 19 March 2015 Paper

Paper

Extending resolution limits of EUV resist materials

Marie Krysak, Michael Leeson, Eungnak Han, James Blackwell, Shane Harlson

Proceedings Volume 9422, 942205 (2015) https://doi.org/10.1117/12.2086276

KEYWORDS: Extreme ultraviolet, Etching, Photoresist materials, Extreme ultraviolet lithography, Scanning electron microscopy, Particles, Nanoparticles, Semiconducting wafers, Photoresist processing, Chemically amplified resists

Read Abstract +

Proceedings Article | 17 April 2014 Paper

Paper

Investigation of novel inorganic resist materials for EUV lithography

Marie Krysak, James Blackwell, Steve Putna, Michael Leeson, Todd Younkin, Shane Harlson, Kent Frasure, Florian Gstrein

Proceedings Volume 9048, 904805 (2014) https://doi.org/10.1117/12.2046677

KEYWORDS: Extreme ultraviolet lithography, Nanoparticles, Extreme ultraviolet, Optical lithography, Metals, Spectroscopy, FT-IR spectroscopy, Scanning electron microscopy, Ultraviolet radiation, Particles

Read Abstract +

Proceedings Article | 18 April 2013 Paper

Paper

Nanoscale modulus and surface chemistry characterization for collapse free resists

Prashant Kulshreshtha, Ken Maruyama, Sara Kiani, Dominik Ziegler, James Blackwell, Deidre Olynick, Paul Ashby

Proceedings Volume 8681, 86810O (2013) https://doi.org/10.1117/12.2011657

KEYWORDS: Atomic force microscopy, Neodymium, Chemistry, Scanning probe microscopy, Ions, Silicon, Scanning electron microscopy, Calibration, Extreme ultraviolet lithography, Transmission electron microscopy

Read Abstract +

Proceedings Article | 29 March 2013 Paper

Paper

Sub-20nm lithography negative tone chemically amplified resists using cross-linker additives

Prashant Kulshreshtha, Ken Maruyama, Sara Kiani, Scott Dhuey, Pradeep Perera, James Blackwell, Deirdre Olynick, Paul Ashby

Proceedings Volume 8682, 86820N (2013) https://doi.org/10.1117/12.2011640

KEYWORDS: Line edge roughness, Molecules, Extreme ultraviolet lithography, Scanning electron microscopy, Lithography, Image resolution, Electron beam lithography, Extreme ultraviolet, Chemically amplified resists, Image processing

Read Abstract +

SPIE Journal Paper | 12 July 2012

Critical material properties for pattern collapse mitigation

Gustaf Winroth, Roel Gronheid, Todd Younkin, James Blackwell

JM3, Vol. 11, Issue 3, 033004, (July 2012) https://doi.org/10.1117/12.10.1117/1.JMM.11.3.033004

KEYWORDS: Polymers, Lithography, Extreme ultraviolet, Atomic force microscopy, Semiconducting wafers, Scanning electron microscopy, Extreme ultraviolet lithography, Chemistry, Photoresist materials, Scanners

Read Abstract +

Proceedings Article | 20 March 2012 Paper

Paper

Critical material properties for pattern collapse mitigation

Gustaf Winroth, Todd Younkin, James Blackwell, Roel Gronheid

Proceedings Volume 8325, 83250R (2012) https://doi.org/10.1117/12.916364

KEYWORDS: Polymers, Lithography, Extreme ultraviolet, Semiconducting wafers, Scanning electron microscopy, Atomic force microscopy, Extreme ultraviolet lithography, Chemistry, Chemically amplified resists, Photoresist materials

Read Abstract +

Proceedings Article | 19 March 2012 Paper

Paper

Ionic carbamate photoacid/photobase generators for the advancement of dual-tone photolithography

Geniece Hallett-Tapley, Tse-Luen Wee, Joby Eldo, Edward Jackson, James Blackwell, Juan Scaiano

Proceedings Volume 8325, 83251T (2012) https://doi.org/10.1117/12.916496

KEYWORDS: Optical lithography, Polymers, Thin films, Lithography, Absorption, Polymer thin films, Semiconducting wafers, Double patterning technology, Photolysis, Silicon

Read Abstract +

Proceedings Article | 16 April 2011 Paper

Paper

Photobase generator enabled pitch division: a progress report

Xinyu Gu, Younjin Cho, Takanori Kawakami, Yuji Hagiwara, Brandon Rawlings, Ryan Mesch, Toshiyuki Ogata, Taeho Kim, Takehiro Seshimo, Wade Wang, Arun Sundaresan, Nicholas Turro, Roel Gronheid, James Blackwell, Robert Bristol, C. Grant Willson

Proceedings Volume 7972, 79720F (2011) https://doi.org/10.1117/12.879861

KEYWORDS: Line edge roughness, Polymers, Lithography, Diffusion, Optical lithography, Photomasks, Chemical analysis, Scanning electron microscopy, Absorbance, Chemistry

Read Abstract +

Proceedings Article | 16 April 2011 Paper

Paper

Polymer-bound photobase generators and photoacid generators for pitch division lithography

Younjin Cho, Xinyu Gu, Yuji Hagiwara, Takanori Kawakami, Toshiyuki Ogata, Brandon Rawlings, Yongjun Li, Arun Sundaresan, Nicholas Turro, Robert Bristol, James Blackwell, C. Grant Willson

Proceedings Volume 7972, 797221 (2011) https://doi.org/10.1117/12.879771

KEYWORDS: Polymers, Lithography, Line edge roughness, NOx, Analog electronics, Photomasks, Polymerization, Chlorine, Molecules, Ultraviolet radiation

Read Abstract +

Proceedings Article | 31 March 2010 Paper

Paper

Reaction kinetics of non-reciprocal photo-base generator (NRPBG) patterning

D. Shykind, R. Bristol, J. Roberts, J. Blackwell, Y. Borodovsky

Proceedings Volume 7639, 76391Y (2010) https://doi.org/10.1117/12.846990

KEYWORDS: Optical lithography, Floods, Lithography, Image processing, Systems modeling, Photoresist processing, MATLAB, Optical engineering, Diffraction, Semiconducting wafers

Read Abstract +

Proceedings Article | 26 March 2010 Paper

Paper

Non-reciprocal double-exposure materials for 193nm pitch division

Robert Bristol, Jeanette Roberts, David Shykind, James Blackwell

Proceedings Volume 7639, 763905 (2010) https://doi.org/10.1117/12.846988

KEYWORDS: Semiconducting wafers, Polymers, Photons, Lithography, Floods, 193nm lithography, Optical lithography, Photoresist materials, Scanners, Photomasks

Read Abstract +

We present an overview of lithography results achieved for materials to support "leave-on-chuck" double-exposure pitch-division patterning. These materials attempt to make use of a non-reciprocal photoresponse in which the same number of absorbed 193nm photons can produce different remaining levels of resist, depending upon whether the photons are received all at once or in two separate exposures. This, in principle, allows for the use of two exposures, using independent masks and without removing the wafer from the chuck, to produce non-regular patterning down to one half the pitch limit of the scanner. Such behavior could be produced, for example, by a reversible two-stage Photoacid Generator (PAG) or other non-reciprocal mechanisms. Several stages of lithography screening were done on a large number of candidate systems. Initially, thermal stability, casting behavior, and single-exposure (SE) contrast curves were investigated to determine whether the system behaved as a usable photoresist. The next stage of testing probed non-reciprocal response, in the form of double-exposure (DE) contrast curves, typically with an intervening whole-wafer flood exposure at a longer wavelength to enact the nonreciprocity. The key criterion for the material to pass this stage was to show a shifted contrast curve (difference in photospeed) for DE vs. SE. Such a shift would then imply that pitch-division imaging would be possible for this material. After identifying materials which exhibited this SE vs. DE contrast curve shift, the next step was actual DE patterning. Since the laboratory tool used for these exposures does not have the precise alignment needed to interleave the two exposures for pitch division, we employed a technique in which the second exposure is rotated slightly with respect to the first exposure. This results in a Moiré-type pattern in which the two aerial images transition between overlap and interleave across the wafer. One particular PAG + sensitizer did indeed show the desired DE vs. SE contrast curve shift and pitch-divided imaging (k₁ = 0.125). This system appears to operate on a scheme based on the creation of a photobase generator between the first and second exposures. Unfortunately, the quality of the pitch-divided images degrades quickly as the pitch is decreased, showing severe LER and bridging defects at a final pitch of 220nm. We postulate that this is caused by the diffusion of one or more key photoproducts. Accompanying papers report on both the photochemical details of the reaction pathways of these materials as well as modeling of the reaction kinetics.

Proceedings Article | 23 March 2010 Paper

Paper

Scissionable polymer resists for extreme ultraviolet lithography

Yoichi Ogata, Georgeta Masson, Yoshi Hishiro, James Blackwell

Proceedings Volume 7636, 763634 (2010) https://doi.org/10.1117/12.847320

KEYWORDS: Polymers, Extreme ultraviolet lithography, Polymerization, Lithography, Photoresist materials, Electron beam lithography, Thin films, Magnesium, Temperature metrology, Extreme ultraviolet

Read Abstract +

Proceedings Article | 1 April 2009 Paper

Paper

Incorporating organosilanes into EUV photoresists: diphenyltrimethylsilylmethylsulfonium triflate as a new PAG

Shalini Sharma, Yoichi Ogata, Clarion Tung, James Blackwell, Todd Younkin, Yoshi Hishiro, Joshua Figueroa, Arnold Rheingold

Proceedings Volume 7273, 72733N (2009) https://doi.org/10.1117/12.814220

KEYWORDS: Extreme ultraviolet lithography, Line width roughness, Optical transfer functions, Optical lithography, Photoresist materials, Semiconducting wafers, Chemistry, Extreme ultraviolet, Polymers, Lithography

Read Abstract +

Proceedings Article | 1 April 2009 Paper

Paper

Underlayer designs to enhance the performance of EUV resists

Hao Xu, James Blackwell, Todd Younkin, Ke Min

Proceedings Volume 7273, 72731J (2009) https://doi.org/10.1117/12.814223

KEYWORDS: Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Polymers, Scanning electron microscopy, Photoresist materials, Semiconducting wafers, Neodymium, Molecules, Optical lithography

Read Abstract +

Proceedings Article | 1 April 2009 Paper

Paper

Double-exposure materials for pitch division with 193nm lithography: requirements, results

Robert Bristol, David Shykind, Sungwon Kim, Yan Borodovsky, Evan Schwartz, Courtney Turner, Georgeta Masson, Ke Min, Katherine Esswein, James Blackwell, Nikolay Suetin

Proceedings Volume 7273, 727307 (2009) https://doi.org/10.1117/12.814352

KEYWORDS: Optical lithography, Molecules, 193nm lithography, Lithography, Absorption, Near ultraviolet, Semiconducting wafers, Absorbance, Xenon, Manufacturing

Read Abstract +

Proceedings Article | 1 April 2009 Paper

Paper

Aryl sulfonates as neutral photoacid generators (PAGs) for EUV lithography

Robert Sulc, James Blackwell, Todd Younkin, E. Steve Putna, Katherine Esswein, Antonio DiPasquale, Ryan Callahan, Hideaki Tsubaki, Tooru Tsuchihashi

Proceedings Volume 7273, 72733R (2009) https://doi.org/10.1117/12.814279

KEYWORDS: Extreme ultraviolet lithography, Lithography, Photoresist materials, Extreme ultraviolet, Optical lithography, Line width roughness, Molecules, Ionization, Semiconducting wafers, Lithium

Read Abstract +

Showing 5 of 25 publications

SIGN IN TO:

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Advertisement

Advertisement