We discuss the reliability of the oxide VCSELs made by Agilent Technologies (formerly part of Hewlett Packard). Measurements of operating temperature in fiber optic modules are given; these temperatures are higher than generally assumed. General challenges with oxide VCSEL reliability are introduced, and different types of failures are discussed. Long-term oxide VCSEL lifetest results are presented, along with observations about the thermal and current acceleration models. Production monitoring strategies are discussed, and the basic degradation phenomenology is briefly shown.
Oxide confined VCSELs are being developed at Hewlett-Packard for the next-generation low cost fiber optics communication applications. Compared to the existing 850 nm implant confined VCSELs, the oxide VCSELs have lower operating voltages, higher slope efficiencies, and better modal bandwidth characteristics. Preliminary data on epitaxy and oxidation control uniformity, device performance, and reliability will be discussed.
Vertical-Cavity Surface-Emitting Lasers (VCSELs) have rapidly been adopted for use in data communications modules due largely to the improvement in reliability over that of competing compact disc lasers. While very long mean lifetimes for VCSELs have been published elsewhere (> 5 X 106 h MTTF at 40C), telecommunications switching applications require further reduction in the early failure rate to meet targets of < 0.5% failures over 25 years at 50 - 70 degree(s)C. Therefore, a extensive reliability program is needed to measure both the wear-out lifetime and the random failure rate of the devices. The results of accelerated life tests will be presented, and we will discuss the methodology used to estimate the failure rate. Models of current and thermal acceleration will be presented. Degradation mechanisms observed in HP lasers will be briefly discussed. We also present preliminary results from HP oxide-aperture VCSELs.
We report high performance 850 nm VCSELs grown by OMVPE on both n-type and p-type GaAs substrates for low cost fiber optic data communication applications. These devices are intended for use in discrete and parallel array applications at data rates up to 1.5 Gbps per channel. Good epitaxial thickness uniformity during multi-wafer growth allows low cost manufacturing and reproducible device performance. Preliminary device reliability testing shows excellent stability in VCSEL performance under accelerated stress conditions.
Long wavelength surface emitting lasers (LWSEL) have important applications in optical fiber communications due to their inherent single-longitudinal mode operation and the ease of coupling into fibers. The high packing density and wafer scale testing capability make them potential low cost sources for optical fiber systems. However, high Auger recombination rates inherent to long wavelength materials and technological problems in fabricating long wavelength DBR mirrors have slowed the development of LWSELs compared to that of (In)GaAs vertical cavity lasers. In this paper, we present results on two devices which have achieved the highest reported operation temperatures of LWSELs to date. In the first section we discuss an optically pumped InGaAsP laser utilizing a GaAs/AlAs mirror fused to the InGaAsP structure. These devices operate at temperatures as high as 144 degree(s)C. The fusing process, room temperature lasing characteristics, and high temperature operation are discussed. In the next section, we present results of an electrically contacted, two-dielectric mirror structure which operates at temperatures as high as 66 degree(s)C, the highest operation temperature of an electrically pumped laser to date. The room temperature and high temperature lasing characteristics are described, as are the effects of non-uniform injection in the active region. In the final section of the paper, we discuss design considerations for room temperature, CW operation.
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