Proceedings Article | 4 March 2013
Proc. SPIE. 8640, Novel In-Plane Semiconductor Lasers XII
KEYWORDS: Slow light, Waveguides, Dispersion, Mode locking, Photonic crystals, Quantum dots, Semiconductor lasers, Laser crystals, Waveguide modes, Pulsed laser operation
For a given average power, the energy per pulse of a mode-locked laser increases with increasing cavity length, lowering
the repetition rate. Photonic crystal slow light optical waveguides can be used to address the high repetition rates and
resulting low pulse energies of conventional semiconductor lasers by substantially increasing the effective optical cavity
length while keeping the device compact. Such a device could enable a semiconductor laser to power two-photon
microscopy, an advanced non-linear technique for time-resolved deep-tissue imaging. We present a design for realizing
a monolithic two-segment quantum dot passively mode-locked photonic crystal laser. The cavity consists of a novel
photonic crystal waveguide designed for low dispersion and wide bandwidth by engineering the photonic crystal lattice
structure. Group velocity dispersion of 2x104 ps2/km, more than an order of magnitude lower than similar dispersion
engineered photonic crystal waveguides, is achieved over 2% bandwidth, more than sufficient for mode-locking. Gain is
achieved by optically pumping epitaxially grown InAs/GaAs quantum dots in part of the photonic crystal waveguide,
and the saturable absorber section is reversed biased to enable pulse shaping. A cladding scheme is used to apply reverse
bias to the saturable absorber and shorten its recovery time. Devices are fabricated using a combination of electron beam
lithography, anisotropic etching, and selective under-etching processes, similar to standard photonic crystal waveguides.
The low-dispersion, wide bandwidth waveguide, combined with the fast dynamics of InAs quantum dots could enable a
compact, low repetition rate mode-locked laser to be realized.
