PROCEEDINGS ARTICLE | March 11, 2010
Proc. SPIE. 7602, Gallium Nitride Materials and Devices V
KEYWORDS: Continuous wave operation, Polarization, High power lasers, Laser development, Semiconductor lasers, Gallium nitride, Laser damage threshold, Indium gallium nitride, Pulsed laser operation
We present new advances in green, blue, and violet InGaN-based laser diodes fabricated on nonpolar and semipolar GaN
substrates. Using these novel crystal orientations, we report high power, high efficiency, continuous-wave operation
from single-lateral-mode electrically pumped laser diodes at wavelengths from 405 nm to 500 nm. Additionally, we
present continuous-wave lasing demonstrations out to 523 nm, representing the longest continuous-wave green laser
emission reported to date. Wall-plug efficiencies of over 25% in the violet region, 16.2% in the blue region, and 2.2% in
the 500 nm range are presented. These InGaN-based devices offer dramatic improvement in size, weight, and cost over
conventional gas or solid state lasers and may enable a variety of new applications in defense, biomedical, industrial, and
consumer projection displays.
