Prof. Jamie Phillips Profile

Prof. Jamie Phillips

at Univ of Delaware

SPIE Involvement:

Author

Publications (15)

Proceedings Article | 10 March 2023 Presentation + Paper

Strain-balanced InGaAs/GaAsSb type-II superlattices on InP for extended short-wavelength infrared detection

Nuha Ahmed-Babikir, Jamie Phillips, Martin Ettenberg, Ye Xu, Michael Lange

Proceedings Volume 12415, 1241506 (2023) https://doi.org/10.1117/12.2651686

KEYWORDS: Absorption, Superlattices, Quantum efficiency, Simulations, Dark current, Absorption spectrum

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Proceedings Article | 4 March 2022 Presentation + Paper

Extended-wavelength 1.3-megapixel type-II superlattice SWIR compact camera system with scalable manufacturing

Martin Ettenberg, Pouya Dianat, Michael Lange, Tom Sudol, Hai Nguyen, Armando Gil, Nuha Ahmed, Jamie Phillips

Proceedings Volume 11997, 1199708 (2022) https://doi.org/10.1117/12.2614565

KEYWORDS: Imaging systems, Short wave infrared radiation, Cameras, Quantum efficiency, Indium gallium arsenide, Readout integrated circuits, Superlattices, Sensors

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Proceedings Article | 5 March 2020 Paper

Unique material modifications of Ga2O3 enabled by ultrafast laser irradiation

Minhyung Ahn, Alex Sarracino, Abdul Ansari, Ben Torralva, Steven Yalisove, Jamie Phillips

Proceedings Volume 11281, 112810O (2020) https://doi.org/10.1117/12.2552922

KEYWORDS: Gallium, Ultrafast lasers, Pulsed laser operation, Crystals, Laser damage threshold, Scanning electron microscopy, Ultrafast phenomena, Electrons, Laser ablation, Nanostructures

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Proceedings Article | 26 February 2020 Presentation + Paper

Mid-wave infrared filtering in silicon subwavelength zero-contrast gratings

Michael Barrow, Jamie Phillips

Proceedings Volume 11290, 112900K (2020) https://doi.org/10.1117/12.2552073

KEYWORDS: Transmittance, Mid-IR, Optical filters, Silicon, Dielectric filters, Dielectric polarization, Infrared radiation, Scanning electron microscopy, Dielectrics, Etching

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Proceedings Article | 24 June 2014 Paper

Passivation of long-wave infrared InAs/GaSb superlattice detectors with epitaxially grown ZnTe

Elena Plis, Maya Narayanan Kutty, Stephen Myers, Sanjay Krishna, Chihyu Chen, Jamie Phillips

Proceedings Volume 9070, 907010 (2014) https://doi.org/10.1117/12.2050490

KEYWORDS: Sensors, Long wavelength infrared, Sulfur, Staring arrays, Measurement devices, Gallium antimonide, Infrared sensors, Infrared detectors, Infrared radiation, Superlattices

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Proceedings Article | 15 March 2013 Paper

Suspended Si/air high contrast subwavelength gratings for long-wavelength infrared reflectors

Justin Foley, Jamie Phillips

Proceedings Volume 8633, 863310 (2013) https://doi.org/10.1117/12.2014532

KEYWORDS: Long wavelength infrared, Reflectivity, Polarization, Silicon, Reflectors, Etching, FT-IR spectroscopy, Optical filters, Fabry–Perot interferometers, Spectroscopy

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Proceedings Article | 21 January 2012 Paper

Theoretical and experimental investigation of MWIR HgCdTe nBn detectors

Silviu Velicu, Jun Zhao, Michael Morley, Anne Itsuno, Jamie Phillips

Proceedings Volume 8268, 82682X (2012) https://doi.org/10.1117/12.904916

KEYWORDS: Mercury cadmium telluride, Mid-IR, Doping, Sensors, Instrument modeling, Heterojunctions, Infrared detectors, Temperature metrology, Optical testing, Photodiodes

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Proceedings Article | 16 September 2011 Paper

Calculated performance of an Auger-suppressed unipolar HgCdTe photodetector for high temperature operation

Anne Itsuno, Jamie Phillips, Angelo Gilmore, Silviu Velicu

Proceedings Volume 8155, 81550J (2011) https://doi.org/10.1117/12.893732

KEYWORDS: Mercury cadmium telluride, Long wavelength infrared, Photodetectors, Doping, Infrared technology, Instrument modeling, Thermography, Sensors, Infrared radiation, Device simulation

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Proceedings Article | 24 January 2011 Paper

VLWIR high operating temperature non-equilibrium photovoltaic HgCdTe devices

S. Velicu, C. Grein, A. Itsuno, J. Phillips

Proceedings Volume 7945, 79451L (2011) https://doi.org/10.1117/12.873470

KEYWORDS: Mercury cadmium telluride, Doping, Sensors, Heterojunctions, Infrared detectors, Photovoltaics, Cadmium, Temperature metrology, Infrared radiation, Absorption

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Proceedings Article | 23 January 2010 Paper

Non-cryogenic operation of HgCdTe infrared detectors

S. Velicu, C. Grein, P. Emelie, A. Itsuno, J. Phillips, P. Wijewarnasuriya

Proceedings Volume 7608, 760820 (2010) https://doi.org/10.1117/12.838381

KEYWORDS: Mercury cadmium telluride, Doping, Infrared detectors, Photodiodes, Diffusion, Sensors, Instrument modeling, Long wavelength infrared, Mid-IR, Infrared radiation

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High sensitivity HgCdTe infrared detector arrays operating at 77 K can be tailored for response across the infrared spectrum (1 to 14 μm and beyond), and are commonly utilized for high performance infrared imaging applications. However, the cooling system required to achieve the desired sensitivity makes them costly, heavy and limits their applicability. Reducing cooling requirements and eventually operating at temperatures that could be reached with thermoelectric coolers can lead to lighter and more compact systems. However, at these elevated temperatures, the absorber layer becomes intrinsic, carrier concentrations are high and Auger processes typically dominate the dark current and noise characteristics. Auger processes can be suppressed by placing the absorber layer between an exclusion junction and an extraction junction at reverse bias. This reduces the minority carrier concentration in the absorber by several orders of magnitude below thermal equilibrium. The majority carrier concentration also drops significantly below thermal equilibrium to maintain charge neutrality, eventually reaching the extrinsic doping level. This device architecture produces a lower dark current density and lower noise at non-cryogenic temperatures than standard p-n junction photodiodes. Due to the precise control of the layer's thicknesses and compositions that could be achieved with molecular beam epitaxy (MBE), this technique is the method of choice for implementing these novel non-equilibrium devices. In this work, we analyze Auger suppression in HgCdTe alloy-based device structures and determine the operation temperature improvements expected when Auger suppression occurs. We identified critical material (absorber dopant concentration and minority carrier lifetime) requirements that must be satisfied for optimal performance characteristics. Experimental dark current-voltage characteristics between 120 and 300 K are fitted using numerical simulations. Based on this, the negative differential resistance (NDR) observed in experimental data is attributed to the full suppression of Auger-1 processes and the partial suppression of Auger-7 processes. We will also present an analysis and comparison of our theoretical and experimental device results in structures where Auger suppression was realized.

Proceedings Article | 20 August 2005 Paper

Hysteretic electro-optic response in ferroelectric thin films

Ding-Yuan Chen, Jamie Phillips

Proceedings Volume 5867, 58670B (2005) https://doi.org/10.1117/12.613013

KEYWORDS: Electro optics, Thin films, Electro optical modeling, Dielectric polarization, Birefringence, Refractive index, Polarization, Ferroelectric materials, Dielectrics, Ferroelectric capacitors

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SPIE Journal Paper | 1 March 2005

Extraction of electro-optic coefficient in thin-film linear electro-optic Mach-Zehnder interferometers with nonperiodic intensity-voltage output characteristics

Ding-Yuan Chen, Jamie Phillips

OE, Vol. 44, Issue 03, 034601, (March 2005) https://doi.org/10.1117/12.10.1117/1.1872032

KEYWORDS: Electro optics, Thin films, Refractive index, Modulators, Crystals, Electrodes, Mach-Zehnder interferometers, Optical engineering, Birefringence, Anisotropy

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Proceedings Article | 12 November 2001 Paper

Advances in large-area Hg1-xCdxTe photovoltaic detectors for remote sensing applications

Priyalal Wijewarnasuriya, Majid Zandian, Jamie Phillips, Dennis Edwall, Roger DeWames, Gernot Hildebrandt, Jagmohan Bajaj, Jose Arias, Arvind D'Souza, Fergus Moore

Proceedings Volume 4454, (2001) https://doi.org/10.1117/12.448180

KEYWORDS: Sensors, Quantum efficiency, Long wavelength infrared, Short wave infrared radiation, Mid-IR, Mercury cadmium telluride, Semiconducting wafers, Photovoltaic detectors, Diffusion, Photovoltaics

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Proceedings Article | 11 July 2000 Paper

Quantum dot carrier dynamics and far-infrared devices

Pallab Bhattacharya, Sanjay Krishna, Jamie Phillips, David Klotzkin, Patrick McCann

Proceedings Volume 4078, (2000) https://doi.org/10.1117/12.392128

KEYWORDS: Quantum dots, Scattering, Sensors, Electrons, Picosecond phenomena, Laser scattering, Far infrared, Quantum wells, Quantum dot lasers, Gallium arsenide

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Proceedings Article | 19 August 1998 Paper

High-speed quantum well and quantum dot lasers

Pallab Bhattacharya, Xiangkun Zhang, Kishore Kamath, David Klotzkin, Jamie Phillips, Catherine Caneau, Rajaram Bhat

Proceedings Volume 3547, (1998) https://doi.org/10.1117/12.319650

KEYWORDS: Modulation, Quantum wells, Quantum dot lasers, Electrons, Laser scattering, Temperature metrology, Quantum dots, Scattering, Cladding, Gallium arsenide

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Showing 5 of 15 publications

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