Mr. Jan-Pieter Kuijten Profile

Jan-Pieter Kuijten

at ASML Netherlands BV

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Author

Publications (15)

Proceedings Article | 16 October 2017 Presentation

EUV Infrastructure: EUV photomask backside cleaning (Conference Presentation)

Bruce Fender, Dusty Leonhard, Hugo Breuer, Jack Stoof, My-Phung Van, Rudy J. Pellens, Reinout Dekkers, Jan-Pieter Kuijten

Proceedings Volume 10450, 1045009 (2017) https://doi.org/10.1117/12.2280387

KEYWORDS: Photomasks, Extreme ultraviolet, Reticles, Pellicles, Scanners, Contamination, Inspection, Extreme ultraviolet lithography, Reflectivity, Oxygen

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EUV Infrastructure: EUV photomask backside cleaning Applied Materials as first author: Bruce J. Fender, Dusty Leonhard, Hugo Breuer, Jack Stoof ASML: My Phung Van, Rudy Pellens, Reinout Dekkers, Jan Pieter Kuijten Due to electrostatic chucking of the backside of EUV masks, backside cleanliness in EUV lithography is an important factor. Contamination on the backside can cause damage to reticle (e-chuck), cross-contaminate to the scanner or cause local distortions in the reticle. Cleaning of the masks offers a solution to reduce the defectivity level on reticles. However, repeated cleaning on masks is known to have an impact on absorber, CD and reflectivity. Ideally, cleaning should occur without any alterations to the critical features on the front side of the mask. With the introduction of pellicles for EUV, there could be an additional drive for backside-only cleaning. In this work the GuardianTM Technology is introduced that enables backside cleaning without any cleaning impact on the reticle front side through a protective seal at the outer edge of the mask. The seal protects the front side during the backside clean. The cleaning process encompasses a single-sided pre-clean oxygen plasma treatment of the mask surface, followed by sonic cleaning, and ending with a rinse and dry step. Separating the mask backside from front side enables: • Backside cleaning without any cleaning impact on features on the mask front side. • The isolation allows an aggressive cleaning of the backside to ensure defect removal. • Processing of reticle with studs on the front side. This prevents unnecessary actions of stud removal and removal of the remaining glue after stud removal and subsequent gluing of the studs after cleaning. Just before chucking of a reticle, the defectivity level on the mask is initially inspected with an in-scanner reticle backside inspection tool. The GuardianTM cleaning process is able to remove the vast majority of the cleanable defects that could impact scanner performance. Post GuardianTM clean interferometric microscope defect review reveals the remaining defects > 25-μm-PSL are ~78% are indent/damage and 11% are defects with insignificant height to impact scanner performance or cleanliness.

Proceedings Article | 20 October 2006 Paper

Optical issues of thin organic pellicles in 45-nm and 32-nm immersion lithography

Kevin Lucas, Joseph Gordon, Will Conley, Mazen Saied, Scott Warrick, Mike Pochkowski, Mark Smith, Craig West, Franklin Kalk, Jan Pieter Kuijten

Proceedings Volume 6349, 63490K (2006) https://doi.org/10.1117/12.686741

KEYWORDS: Pellicles, Optical proximity correction, Apodization, Polarization, Critical dimension metrology, Lithography, Photomasks, Semiconducting wafers, Reticles, Spatial frequencies

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Proceedings Article | 12 May 2005 Paper

The impact of illumination on feature fidelity for CPL mask technology

Jan Kuijten, Arjan Verhappen, Will Conley, Stephan van de Goor, Lloyd Litt, Wei Wu, Kevin Lucas, Bernie Roman, Bryan Kasprowicz, Chris Progler, Robert Socha, Doug van den Broeke, Kurt Wampler, Tom Laidig, Stephen Hsu

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.605481

KEYWORDS: Chromium, Photomasks, Nanoimprint lithography, Phase shifts, Resolution enhancement technologies, Optical proximity correction, Mask making, Semiconductors, Photoresist materials, Manufacturing

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Proceedings Article | 20 August 2004 Paper

CPL reticle technology for advanced device applications

Willard Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, J. Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony, Michael Hathorn

Proceedings Volume 5446, (2004) https://doi.org/10.1117/12.557802

KEYWORDS: Photomasks, Optical proximity correction, Image processing, Reticles, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Quartz, Binary data

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Proceedings Article | 28 May 2004 Paper

The impact of MEEF through pitch for 120-nm contact holes

Lloyd Litt, Wei Wu, Will Conley, Kevin Lucas, Bernard Roman, Patrick Montgomery, Bryan Kasprowicz, Christopher Progler, Robert Socha, Arjan Verhappen, Kurt Wampler, Erika Schaefer, Pat Cook, Jan-Pieter Kuijten, Wil Pijnenburg

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537437

KEYWORDS: Fiber optic illuminators, Atrial fibrillation, Critical dimension metrology, Resolution enhancement technologies, Photomasks, Semiconducting wafers, Manufacturing, Reticles, Nanoimprint lithography, Binary data

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Proceedings Article | 28 May 2004 Paper

Defect printability in CPL mask technology

Jan-Pieter Kuijten, Arjan Verhappen, Wil Pijnenburg, Will Conley, Lloyd Litt, Wei Wu, Patrick Montgomery, Bernard Roman, Bryan Kasprowicz, Christopher Progler, Robert Socha, Douglas Van Den Broeke, Erika Schaefer, Pat Cook

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537619

KEYWORDS: Photomasks, Resolution enhancement technologies, Reticles, Manufacturing, Scanning electron microscopy, Semiconductors, Phase shifts, Binary data, Lithography, Semiconducting wafers

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Proceedings Article | 28 May 2004 Paper

The application of CPL reticle technology for the 0.045-mm node

Will Conley, Douglas Van Den Broeke, Robert Socha, Wei Wu, Lloyd Litt, Kevin Lucas, Bernard Roman, Richard Peters, Colita Parker, Fung Chen, Kurt Wampler, Thomas Laidig, Erika Schaefer, Jan-Pieter Kuijten, Arjan Verhappen, Stephan van de Goor, Martin Chaplin, Bryan Kasprowicz, Christopher Progler, Emilien Robert, Philippe Thony

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.537613

KEYWORDS: Photomasks, Optical proximity correction, Reticles, Image processing, Resolution enhancement technologies, Phase shifts, Mask making, Scanning electron microscopy, Manufacturing, Quartz

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Proceedings Article | 26 June 2003 Paper

Mighty high-T lithography for 65-nm generation contacts

Will Conley, Patrick Montgomery, Kevin Lucas, Lloyd Litt, John Maltabes, Laurent Dieu, Gregory Hughes, David Mellenthin, Robert Socha, Eric Fanucchi, Arjan Verhappen, Kurt Wampler, Linda Yu, Erika Schaefer, Shawn Cassel, Jan Kuijten, Wil Pijnenburg, Vincent Wiaux, Geert Vandenberghe

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485499

KEYWORDS: Photomasks, Lithography, Inspection, Reticles, Optical lithography, Lithographic illumination, Binary data, Manufacturing, 193nm lithography, Semiconducting wafers

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Proceedings Article | 26 June 2003 Paper

Process, design, and optical proximity correction requirements for the 65nm device generation

Kevin Lucas, Patrick Montgomery, Lloyd Litt, Will Conley, Sergei Postnikov, Wei Wu, Chi-Min Yuan, Marc Olivares, Kirk Strozewski, Russell Carter, James Vasek, David Smith, Eric Fanucchi, Vincent Wiaux, Geert Vandenberghe, Olivier Toublan, Arjan Verhappen, Jan Kuijten, Johannes van Wingerden, Bryan Kasprowicz, Jeffrey Tracy, Christopher Progler, Eugene Shiro, Igor Topouzov, Karl Wimmer, Bernard Roman

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485498

KEYWORDS: Reticles, Optical lithography, Optical proximity correction, Lithography, 193nm lithography, Scanners, Logic, Optical design, Lithographic illumination, SRAF

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Proceedings Article | 27 December 2002 Paper

Advanced 193 tri-tone EAPSM (9% to 18%) for 65-nm node

Laurent Dieu, Eric Fanucchi, Greg Hughes, John Maltabes, David Mellenthin, Will Conley, Lloyd Litt, Kevin Lucas, Robert Socha, Kurt Wampler, Arjan Verhappen, Jan-Pieter Kiujten

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.467783

KEYWORDS: Reticles, Inspection, Multilayers, Tin, Manufacturing, Lithography, Etching, Photomasks, Process control, Transmittance

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Proceedings Article | 14 September 2001 Paper

Trench warfare!: fitting photons for fine-feature fabrication

Jan Kuijten, Will Conley, Robert Socha, Stephan van de Goor, Stephen Hsu, Dave Smith, Marc Oliveras, Kirk Strozenski

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435714

KEYWORDS: Optical proximity correction, Semiconducting wafers, Electroluminescence, Imaging systems, Lithography, Lithographic illumination, Reticles, Critical dimension metrology, Warfare, Photons

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Proceedings Article | 5 September 2001 Paper

RuMBa: a rule-model OPC for low MEEF 130-nm KrF lithography

Stephen Hsu, Xuelong Shi, Chungwei Michael Hsu, Noel Corcoran, J. Fung Chen, Sunil Desai, Micheal Sherrill, Y. Tseng, H. Chang, J. Kao, Alex Tseng, WeiJyh Liu, Anseime Chen, Arthur Lin, Jan Kujten, Eric Jacobs, Arjan Verhappen

Proceedings Volume 4409, (2001) https://doi.org/10.1117/12.438410

KEYWORDS: Photomasks, Optical proximity correction, Photoresist processing, Binary data, Semiconducting wafers, Reticles, Electroluminescence, Lithography, Calibration, Critical dimension metrology

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Proceedings Article | 22 August 2001 Paper

Lihtography process optimization for 130-nm polygate mask and the impact of mask error factor

Stephen Hsu, Xuelong Shi, Robert Socha, J. Fung Chen, Jason Yee, Mohan Anath, Sunil Desai, Philip Imamura, Micheal Sherrill, Y. Tseng, H. Chang, J. Kao, Alex Tseng, WeiJyh Liu, Anseime Chen, Arthur Lin, Jan Kujten, Eric Jacobs, Arjan Verhappen

Proceedings Volume 4344, (2001) https://doi.org/10.1117/12.436806

KEYWORDS: Photomasks, Photoresist processing, Binary data, Optical proximity correction, Critical dimension metrology, Reticles, Semiconducting wafers, Electroluminescence, Lithography, Scanning electron microscopy

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Proceedings Article | 5 July 2000 Paper

Advanced mix-and-match using a high-NA i-line scanner

Jan Kuijten, Thomas Harris, Ludo van der Heijden, David Witko, John Cossins, James Foster, Douglas Ritchie

Proceedings Volume 4000, (2000) https://doi.org/10.1117/12.389079

KEYWORDS: Scanners, Deep ultraviolet, Semiconducting wafers, Distortion, Optical alignment, Overlay metrology, Lithography, Manufacturing, Photoresist materials, Reticles

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Proceedings Article | 29 June 1998 Paper

Reticle contributions to CD uniformity for 0.25-um DUV lithography

Jan Kuijten, Frank Duray, Ted der Kinderen

Proceedings Volume 3334, (1998) https://doi.org/10.1117/12.310792

KEYWORDS: Critical dimension metrology, Reticles, Semiconducting wafers, Deep ultraviolet, Lithography, Photoresist materials, Scanning electron microscopy, Photomasks, Finite element methods, Cadmium

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Showing 5 of 15 publications

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