Dr. Jan Mulkens Profile

Dr. Jan Mulkens

Program System Engineer at

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Author

Publications (38)

PROCEEDINGS ARTICLE | March 13, 2018

Holistic approach for overlay and edge placement error to meet the 5nm technology node requirements

Proc. SPIE. 10585, Metrology, Inspection, and Process Control for Microlithography XXXII

KEYWORDS: Lithography, Electron beams, Metrology, Logic, Scanners, Extreme ultraviolet lithography, Optical proximity correction, Critical dimension metrology, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | March 28, 2017

Patterning control strategies for minimum edge placement error in logic devices

Proc. SPIE. 10145, Metrology, Inspection, and Process Control for Microlithography XXXI

KEYWORDS: Lithography, Metrology, Optical lithography, Scanners, Control systems, Process control, Extreme ultraviolet, Line width roughness, Extreme ultraviolet lithography, Immersion lithography, Logic devices, Optical proximity correction, Critical dimension metrology, Line edge roughness, Semiconducting wafers, Overlay metrology

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SPIE Journal Paper | March 29, 2016

High-order distortion control using a computational prediction method for device overlay

Kang, Young Seog , Affentauschegg, Cedric , Mulkens, Jan , Kim, Jang-Sun , Shin, Ju Hee , Kim, Young Ha , Nam, YoungSun , Choi, Young-Sin , Ha, Hunhwan , Lee, Dong-Han , Lee, Jae-il , Rizvi, Umar , Geh, Bernd , van der Heijden, Rob , Baselmans, Jan , Kwon, Oh-Sung

JM3 Vol. 15 Issue 02

KEYWORDS: Overlay metrology, Metrology, Distortion, Control systems, Semiconducting wafers, Scanners, Etching, Information technology, Image processing, Photomasks

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PROCEEDINGS ARTICLE | March 25, 2016

Holistic overlay control for multi-patterning process layers at the 10nm and 7nm nodes

Proc. SPIE. 9778, Metrology, Inspection, and Process Control for Microlithography XXX

KEYWORDS: Target detection, Metrology, Lithium, Scanners, Time metrology, Process control, Optical alignment, Semiconducting wafers, Overlay metrology, Process modeling

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Multi-patterning lithography at the 10-nm and 7-nm nodes is driving the allowed overlay error down to extreme low values. Advanced high order overlay correction schemes are needed to control the process variability. Additionally the increase of the number of split layers results in an exponential increase of metrology complexity of the total overlay and alignment tree. At the same time, the process stack includes more hard-mask steps and becomes more and more complex, with as consequence that the setup and verification of the overlay metrology recipe becomes more critical. All of the above require a holistic approach that addresses total overlay optimization from process design to process setup and control in volume manufacturing. In this paper we will present the holistic overlay control flow designed for 10-nm and 7-nm nodes and illustrate the achievable ultimate overlay performance for a logic and DRAM use case. As figure 1 illustrates we will explain the details of the steps in the holistic flow. Overlay accuracy is the driver for target design and metrology tool optimization like wavelength and polarization. We will show that it is essential to include processing effects like etching and CMP which can result in a physical asymmetry of the bottom grating of diffraction based overlay targets. We will introduce a new method to create a reference overlay map, based on metrology data using multiple wavelengths and polarization settings. A similar approach is developed for the wafer alignment step. The overlay fingerprint correction using linear or high order correction per exposure (CPE) has a large amount of parameters. It is critical to balance the metrology noise with the ultimate correction model and the related metrology sampling scheme. Similar approach is needed for the wafer align step. Both for overlay control as well as alignment we have developed methods which include efficient use of metrology time, available for an in the litho-cluster integrated metrology use. These methods include a novel set models that efficiently describe different process fingerprints. We will explain the methods and show the benefits for logic and DRAM use cases.

PROCEEDINGS ARTICLE | March 15, 2016

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

Proc. SPIE. 9780, Optical Microlithography XXIX

KEYWORDS: Lithography, Metrology, Logic, Optical lithography, Etching, Scanners, Scatterometry, Process control, Photomasks, Plasma etching, Critical dimension metrology

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PROCEEDINGS ARTICLE | March 19, 2015

Intra-field on-product overlay improvement by application of RegC and TWINSCAN corrections

Proc. SPIE. 9424, Metrology, Inspection, and Process Control for Microlithography XXIX

KEYWORDS: Actuators, Reticles, Metrology, Lithium, Scanners, Distortion, Image registration, Photomasks, Semiconducting wafers, Overlay metrology

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The on product overlay specification and Advanced Process Control (APC) is getting extremely challenging particularly after the introduction of multi-patterning applications like Spacer Assisted Double Patterning (SADP) and multipatterning techniques like N-repetitive Litho-Etch steps (LE^N, N ≥ 2). When the latter is considered, most of the intrafield overlay contributors drop out of the overlay budget. This is a direct consequence of the fact that the scanner settings (like dose, illumination settings, etc.) as well as the subsequent processing steps can be made very similar for two consecutive Litho-Etch layers. The major overlay contributor that may require additional attention is the Image Placement Error (IPE). When the inter-layer overlay is considered, controlling the intra-field overlay contribution gets more complicated. In addition to the IPE contribution, the TWINSCAN^TM lens fingerprint in combination with the exposure settings is going to play a role as well. Generally speaking, two subsequent functional layers have different exposure settings. This results in a (non-reticle) additional overlay contribution.

In this paper, we have studied the wafer overlay correction capability by RegC® in addition to the TWINSCAN^TM intrafield corrections to improve the on product overlay performance. RegC® is a reticle intra-volume laser writing technique that causes a predictable deformation element (RegC® deformation element) inside the quartz (Qz) material of a reticle. This technique enables to post-process an existing reticle to correct for instance for IPE. Alternatively, a pre-determined intra-field fingerprint can be added to the reticle such that it results in a straight field after exposure. This second application might be very powerful to correct for instance for (cold) lens fingerprints that cannot be corrected by the scanner itself. Another possible application is the intra-field processing fingerprint. One should realize that a RegC® treatment of a reticle generally results in global distortion of the reticle. This is not a problem as long as these global distortions can be corrected by the TWINSCAN^TM system (currently up to the third order). It is anticipated that the combination of the RegC® and the TWINSCAN^TMcorrections act as complementary solutions. These solutions perfectly fit into the ASML Litho InSight (LIS) product in which feedforward and feedback corrections based on YieldStar overlay measurements are used to improve the on product overlay.

PROCEEDINGS ARTICLE | March 13, 2015

Overlay and edge placement control strategies for the 7nm node using EUV and ArF lithography

Proc. SPIE. 9422, Extreme Ultraviolet (EUV) Lithography VI

KEYWORDS: Lithography, Metrology, Optical lithography, Scanners, Control systems, Extreme ultraviolet, Extreme ultraviolet lithography, Critical dimension metrology, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | April 17, 2014

Across scanner platform optimization to enable EUV lithography at the 10-nm logic node

Proc. SPIE. 9048, Extreme Ultraviolet (EUV) Lithography V

KEYWORDS: Actuators, Lithography, Logic, Optical lithography, Scanners, Extreme ultraviolet, Extreme ultraviolet lithography, Source mask optimization, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | April 2, 2014

Overlay improvements using a real time machine learning algorithm

Proc. SPIE. 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII

KEYWORDS: Metrology, Sensors, Scanners, Control systems, Time metrology, Neural networks, Machine learning, Optical alignment, Semiconducting wafers, Overlay metrology

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SPIE Journal Paper | January 7, 2014

Holistic optimization architecture enabling sub-14-nm projection lithography

Mulkens, Jan , Hinnen, Paul , Kubis, Michael , Padiy, Alexander , Benschop, Jos

JM3 Vol. 13 Issue 01

KEYWORDS: Semiconducting wafers, Scanners, Overlay metrology, Lithography, Reticles, Metrology, Control systems, Projection lithography, Calibration, Actuators

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PROCEEDINGS ARTICLE | April 12, 2013

High order field-to-field corrections for imaging and overlay to achieve sub 20-nm lithography requirements

Proc. SPIE. 8683, Optical Microlithography XXVI

KEYWORDS: Actuators, Lithography, Reticles, Metrology, Calibration, Scanners, Control systems, Photomasks, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | April 12, 2013

Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

Proc. SPIE. 8683, Optical Microlithography XXVI

KEYWORDS: Metrology, Sensors, Scanners, Control systems, Scatterometry, Signal processing, Semiconducting wafers, Yield improvement, Wafer manufacturing, Overlay metrology

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PROCEEDINGS ARTICLE | March 13, 2012

Driving imaging and overlay performance to the limits with advanced lithography optimization

Proc. SPIE. 8326, Optical Microlithography XXV

KEYWORDS: Actuators, Reticles, Metrology, Calibration, Scanners, Control systems, Optical alignment, Optimization (mathematics), Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | April 5, 2011

Solutions for 22-nm node patterning using ArFi technology

Proc. SPIE. 7973, Optical Microlithography XXIV

KEYWORDS: Lithography, Reticles, Logic, Optical lithography, Etching, Scanners, Photomasks, Optical proximity correction, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | March 23, 2011

Advanced wavefront engineering for improved imaging and overlay applications on a 1.35 NA immersion scanner

Proc. SPIE. 7973, Optical Microlithography XXIV

KEYWORDS: Reticles, 3D acquisition, Scanners, Wavefronts, Photomasks, Source mask optimization, Computational lithography, Optimization (mathematics), Semiconducting wafers, 3D image processing

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PROCEEDINGS ARTICLE | March 4, 2010

Advanced imaging with 1.35 NA immersion systems for volume production

Proc. SPIE. 7640, Optical Microlithography XXIII

KEYWORDS: Reticles, Logic, Imaging systems, Scanners, Wavefronts, Control systems, Optical alignment, Critical dimension metrology, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | March 16, 2009

Extending single-exposure patterning towards 38-nm half-pitch using 1.35 NA immersion

Proc. SPIE. 7274, Optical Microlithography XXII

KEYWORDS: Lithography, Optical lithography, Polarization, Imaging systems, Control systems, Printing, Immersion lithography, Critical dimension metrology, Thin film coatings, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 7, 2008

High-n immersion lithography

Proc. SPIE. 6924, Optical Microlithography XXI

KEYWORDS: Optical components, Microfluidics, Transparency, Contamination, Water, Ultraviolet radiation, Immersion lithography, Semiconducting wafers, Pulsed laser operation, Absorption

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PROCEEDINGS ARTICLE | March 7, 2008

Latest developments on immersion exposure systems

Proc. SPIE. 6924, Optical Microlithography XXI

KEYWORDS: Lithography, Monochromatic aberrations, Polarization, Manufacturing, Double patterning technology, Immersion lithography, Semiconducting wafers, Overlay metrology, Focus stacking software, Combined lens-mirror systems

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PROCEEDINGS ARTICLE | March 27, 2007

Extending immersion lithography with high-index materials: results of a feasibility study

Proc. SPIE. 6520, Optical Microlithography XX

KEYWORDS: Refractive index, Microfluidics, Contamination, Water, Glasses, Immersion lithography, Critical dimension metrology, Neodymium, Semiconducting wafers, Absorption

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PROCEEDINGS ARTICLE | March 19, 2007

Defects, overlay, and focus performance improvements with five generations of immersion exposure systems

Proc. SPIE. 6520, Optical Microlithography XX

KEYWORDS: Curtains, Molecular bridges, Signal attenuation, Scanners, Particles, Control systems, Bridges, Thin film coatings, Photoresist processing, Semiconducting wafers

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PROCEEDINGS ARTICLE | March 15, 2006

The next phase for immersion lithography

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Refractive index, Microfluidics, Optical lithography, Water, Glasses, Immersion lithography, Critical dimension metrology, Neodymium, Semiconducting wafers, Absorption

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PROCEEDINGS ARTICLE | March 15, 2006

Immersion lithography with an ultrahigh-NA in-line catadioptric lens and a high-transmission flexible polarization illumination system

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Lithography, Mirrors, Curtains, Lithographic illumination, Polarization, Imaging systems, Lens design, Semiconducting wafers, Combined lens-mirror systems, Fiber optic illuminators

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PROCEEDINGS ARTICLE | March 15, 2006

A dive into clear water: immersion defect capabilities

Proc. SPIE. 6154, Optical Microlithography XIX

KEYWORDS: Lithography, Curtains, Scanners, Particles, Manufacturing, Scanning electron microscopy, Immersion lithography, Thin film coatings, Photoresist processing, Semiconducting wafers

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PROCEEDINGS ARTICLE | January 27, 2005

ArF immersion lithography using TWINSCAN technology

Proc. SPIE. 5645, Advanced Microlithography Technologies

KEYWORDS: Lithography, Optical lithography, Imaging systems, Sensors, Metals, Water, Immersion lithography, Optical alignment, Semiconducting wafers, Prototyping

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PROCEEDINGS ARTICLE | May 28, 2004

Optical lithography with 157-nm technology

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Lithography, Reticles, Optical lithography, Contamination, Scanners, Distortion, Oxygen, Pellicles, Chemical elements, Surface finishing

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PROCEEDINGS ARTICLE | May 28, 2004

Optical lithography in the sub-50-nm regime

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Lithography, Reticles, Optical lithography, Polarization, Chromium, Photoresist materials, Photomasks, Sodium, Semiconducting wafers, Resolution enhancement technologies

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PROCEEDINGS ARTICLE | May 28, 2004

Extending optical lithography with immersion

Proc. SPIE. 5377, Optical Microlithography XVII

KEYWORDS: Wafer-level optics, Lithography, Microfluidics, Optical lithography, Imaging systems, Scanners, Image sensors, Immersion lithography, Semiconducting wafers, Prototyping

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PROCEEDINGS ARTICLE | May 12, 2004

Immersion lithography exposure systems: today's capabilities and tomorrow’s expectations

Proc. SPIE. 5754, Optical Microlithography XVIII

KEYWORDS: Lithography, Lenses, Water, Manufacturing, Distortion, Lens design, Immersion lithography, SRAF, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | May 12, 2004

Imaging enhancements by polarized illumination: theory and experimental verification

Proc. SPIE. 5754, Optical Microlithography XVIII

KEYWORDS: Reticles, Lithographic illumination, Polarization, Imaging systems, Electroluminescence, Photomasks, Critical dimension metrology, Line edge roughness, Semiconducting wafers, Fiber optic illuminators

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SPIE Journal Paper | January 1, 2004

Benefits and limitations of immersion lithography

Mulkens, Jan , Flagello, Donis , Streefkerk, Bob , Gräupner, Paul

JM3 Vol. 3 Issue 01

KEYWORDS: Photoresist materials, Semiconducting wafers, Water, Liquids, Polarization, Immersion lithography, Lithography, Fluid dynamics, Microfluidics, Refractive index

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PROCEEDINGS ARTICLE | June 26, 2003

Optical lithography solutions for sub-65-nm semiconductor devices

Proc. SPIE. 5040, Optical Microlithography XVI

KEYWORDS: Lithography, Optical lithography, Birefringence, Imaging systems, Oxygen, Pellicles, Critical dimension metrology, Semiconducting wafers, Overlay metrology, Combined lens-mirror systems

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PROCEEDINGS ARTICLE | July 30, 2002

157-nm technology: Where are we today?

Proc. SPIE. 4691, Optical Microlithography XV

KEYWORDS: Lithography, Reticles, Contamination, Silica, Birefringence, Crystals, Distortion, Lens design, Pellicles, Photomasks

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PROCEEDINGS ARTICLE | July 5, 2000

Advanced technology for extending optical lithography

Proc. SPIE. 4000, Optical Microlithography XIII

KEYWORDS: Lithography, Optical lithography, Silica, Polarization, Scanners, Lens design, Photomasks, Semiconducting wafers, Laser optics, Standards development

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PROCEEDINGS ARTICLE | July 5, 2000

Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarization

Proc. SPIE. 4000, Optical Microlithography XIII

KEYWORDS: Lithography, Reticles, Optical lithography, Modulation, Polarization, Manufacturing, Image resolution, Photoresist materials, Monte Carlo methods, Photomasks

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PROCEEDINGS ARTICLE | December 30, 1999

Challenges and opportunities for 157-nm mask technology

Proc. SPIE. 3873, 19th Annual Symposium on Photomask Technology

KEYWORDS: Lithography, Reticles, Contamination, Silica, Reflection, Reflectivity, Pellicles, Photomasks, Semiconducting wafers, Absorption

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PROCEEDINGS ARTICLE | July 26, 1999

ArF step-and-scan exposure system for 0.15-um and 0.13-um technology nodes

Proc. SPIE. 3679, Optical Microlithography XII

KEYWORDS: Lithography, Monochromatic aberrations, Reticles, Imaging systems, Distortion, Scanning electron microscopy, Photomasks, Photoresist processing, Semiconducting wafers, Overlay metrology

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PROCEEDINGS ARTICLE | June 7, 1996

Photolithography using the AERIAL illuminator in a variable-NA wafer stepper

Proc. SPIE. 2726, Optical Microlithography IX

KEYWORDS: Oxides, Lithography, Reticles, Optical lithography, Diffractive optical elements, Silicon, Scanning electron microscopy, Photoresist materials, Semiconducting wafers, Fiber optic illuminators

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Showing 5 of 38 publications

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