Soft errors resulting from the impact of charged particles are emerging as a major issue in the design of reliable circuits
at deep sub-micron dimensions even at ground level. To face this challenge, a designer must dispose of a variety of
mitigation schemes adapted to their specific design constraints. Built In Current Sensors have been proposed as a
detection scheme for single event upsets in SRAM. In this paper, Power-Bus current transients in SRAM memories for
Single Event Upset Detection have been analyzed in a 65nm CMOS technology. The different types of current roles
which are applied during the simulation is discussed. The results show the important contribution of leakage currents in
the response of the memory cell to an external event.
In this work, we present a non-linear electromechanical model of an electrostatically excited cantilever that can be used to perform system level electrical simulations. This model is implemented by using an analog hardware description language (VHDL-AMS) that allows its use in a common IC CAD environment like CADENCE. Small-signal and large-signal simulations are performed and the results are compared with a simple linear model (RLC//C) showing the benefits of this model. This model is validated by its fit with the experimental results obtained from a monolithic sub-micrometer cantilever based sensor
A Micro Electro Mechanical System (MEMS) for mass detection is presented. It has been developed by the monolithic integration of the mechanical transducer with the CMOS control circuit. The sensor transducer consists on an array of four resonating cantilevers; oscillation is achieved by electrostatic excitation. The independent control on each cantilever of the arrays allows multiple sensing on a single device. The microresonators are fabricated on polysilicon in a compatibilized process with the front-end CMOS circuitry. The readout of the cantilevers oscillation is achieved by a current amplifier. Expected Mass resolution in air is 80 ag/Hz.