The consequences of the use of high-k dielectrics in nanocrystal based non-volatile flash memories focusing on the electrical and electronic properties are investigated through computational simulations. In the light of these results, we discuss several aspects which must be addressed for the design of such devices. We focus on nanocrystals flash memories with HfO2 and SiO2 for analysis. Due to significant reductions of the single-electron tunneling time and improvements on the data retention, high-k dielectrics offers important improvements for the non-volatile flash memories technology.
We will discuss the advantages of the realization of SiC/SiO2 quantum structures and their optical absorption properties. Our calculations suggest that it is possible to extend the range of the optical absorption of such structures to build applications that operates from infrared to UV spectrum using a single material and band-structure engineering.