Free space optical communication systems deployed in office buildings are subject to transmission loss through windows. Window attenuation varies between 0.4 and more than 15 dB. Window attenuation values are required to calculate communications link power budget and availability. But direct measurement of window attenuation in high-rise buildings is difficult since it requires access to both sides of the window. In this paper, we present a method of measuring optical attenuation from the interior side of a window. This method is based on measuring back reflections of a laser beam propagating through a semi-transparent dielectric medium, thus eliminating the need for access to the exterior of a building. In this system, a laser beam is launched at 45 degree(s) to normal incidence in order for the user to discriminate between the various reflections from the dielectric interfaces within the medium. A photodetector is then moved through the plane of incidence and the intensities of reflections from interfaces within the medium are measured. A simple formula is used to calculate total transmission of the optical system based on the relative intensities of the incident light beam and all resulting reflections. In this approach, it is assumed that the reflectivities of the first and final interfaces are identical. The index of refraction for glass from one commercial fabricator varies little; hence the reflectivity of uncoated air-glass interfaces in a particular window is the same. The intensity of the reflection from the final interface is attenuated by the entire medium twice. By comparison of the incident, first, and final reflected intensity a transmitted intensity can be determined. The same equation is used for a medium with any number of dielectric interfaces. A measurement of optical loss through a window without access to both sides of the medium is now possible. This method has been demonstrated to be accurate (+/- 1dB) through various windows with optical losses of up to 12dB.
KEYWORDS: Semiconductor lasers, Commercial off the shelf technology, Avalanche photodetectors, Free space optical communications, High power lasers, Diodes, Receivers, Telecommunications, Quantum wells, Transmitters
In our Photonics West 98 paper, we presented our study results on using commercially available 860 nm high power laser diodes and high-speed laser driver for free-space laser communication terminal application. We demonstrated the feasibility of a free space laser communication link using a junction-up 860 nm high power laser diode driven by a high current laser driver from Hytek Microsystems up to 622 Mb/s. Recent development in high speed InGaAs/GaAs strained layer quantum well (SLQW) laser at 980 nm has provided an additional design option for a laser communication terminal. The advantages of using the 980 nm laser are: (1) WDM market in the telecom industry has created a volume demand for the 980 nm pump lasers. The future cost of 980 nm lasers is expected to be lower due to the economy of scale. (2) In our previous publications, we have demonstrated CW operation of strained layer QW laser at temperature higher than 200 degree(s)C. There is a potential for this type of laser diode to operate in a much harsher and higher temperature environment, and (3) 980 nm pump laser has output power comparable to high power 860 nm laser diodes. In this paper, we will present the high data rate characteristics of a high-speed 980 nm (SLQW) pump laser. Using commercial-off-the-shelf laser drivers we will demonstrate the laser transmitter system characteristics from 622 Mb/s to 3 Gb/s. Detail experimental results on bit- error-rate measurement for a 980 nm device will be presented.
KEYWORDS: Semiconductor lasers, Diodes, Commercial off the shelf technology, High power lasers, Transmitters, Free space optical communications, Avalanche photodetectors, Capacitance, Modulation, Laser applications
Recently, there has been strong interest in the application of commercial-off-the-shelf (COTS) electronic and optoelectronic (O/E) components for free space laser communication application. Besides the space qualified packaging issues, the main problems of using COTS O/E transmitter are: (1) Telecom grade laser transmitters do not have sufficient power to meet the free space laser communication requirements; (2) COTS laser diode transmitter driver circuits have limited peak drive current, usually below 100 mA, which is too low for driving high power laser diodes; and (3) COTS high power laser diodes are usually not used for high data rate applications since the high speed performance of the laser/driver combination is usually inadequate. In this paper we will present our latest study results on the SDL 5430 and SDL 580 high power laser diodes driven by high current laser drivers at data rates from 600 Mb/s to over 1 Gb/s. Several models from the HY6000 family of high current and high speed laser diode drivers from Hytek Microsystems Inc., designed for free space laser communication applications, have been tested with the SDL high power laser diodes. Using direct drive technique with NRZ modulation, average output power over 100 mW at 622 Mb/s were obtained with these low cost Hytek drivers. For data rates over 1 Gb/s, the parasitic associated with the laser diode becomes an important limitation factor. We have measured the capacitance of the SDL 5430 and the new junction up SDL 580 laser diodes, an equivalent circuit model is developed to examine the effect of these parasitics on the speed of the laser diode. The results are consistent with our experimental observations.
We describe a circuit for generating a variety of pulsed waveforms. The circuit consists of a fast photoconductive switch (the bulk avalanche semiconductor switch or BASS) and three transmission line sections consisting of a charge line, a tuning stub and an output line. A model was established for predicting the expected waveforms and experimental results are compared to the model predictions.
The electric fields of bulk (100) and surface (111) GaAs high-voltage photoconductive switches were imaged utilizing the electro-optic effect of the semi-insulating GaAs substrate. Experimental methodology for obtaining the images is described along with a self-calibrating data reduction algorithm. Use of the technique for observing fabrication defects and time dependent field nonuniformities is shown.
The prefiring electric field distribution within a bulk avalanche semiconductor switch has a strong bearing upon the propagation of current filaments that form during the conduction state, the voltage breakdown limits for the off-state, and thus the overall peak power scalability of the switch. In this paper, we apply a detailed numerical model for semi-insulating GaAs which includes the full electronic structure of the deep levels to calculate the internal field distribution under prefiring bias voltages. We demonstrate that the electric field is far from homogeneous, with a potential barrier being formed at the cathode end, and the maximum field occurring at the anode end. The more specific details of this electric field distribution are found to depend greatly upon the type of semi-insulating compensation mechanism present in the GaAs substrate. This electric field distribution agrees qualitatively with that determined by a novel optical imaging technique based upon the Franz-Keldysh effect.
A multigigahertz microwave signal was generated and up-converted in a GaAs substrate coplanar strip line. Two 630-nm-wavelength laser pulses-one with a normal wavefront, another with a titled wavefront- were respectively used to generate and frequency up-convert the signal. The relativistic plasma front, induced by the tilted optical wavefront, frequency up-shifts the counter-propagating electromagnetic wave via the Doppler effect. When the speed of the plasma front was about 0.4 times the speed of electromagnetic wave in the coplanar strip lines, the experiments showed that the fall time of a step signal decreased more than 30% after the reflection. Given the bandwidth limitations of the data acquisition system, it is possible that a factor of 2 increase was achieved. A transmission line model was employed to simulate this process. The simulation results were consistent with experimental observations. Using coplanar strip lines on a GaAs substrate for microwave signal compression device has the advantage of a high reflection coefficient, frequency tunability, small laser trigger energy, and all-solid-state construction, making this technique suitable for impulse radar applications.
We describe a numerical model of an avalanche switch that incorporates the possibility of filament creation. Detailed results of this method are presented which show time delay between beginning of initiating laser pulse and switching, turn-on time much faster than carrier transit time, and formation of high current filament. Quantitative results from this model are in reasonable agreement with experimentally observed values.
The spectral and temporal nature of the recombinant radiation from a GaAs photoconductive switch is described. A simultaneous measurement of the electrical avalanche pulse and associated temporal luminescence peak is utilized to extract a propagation velocity for the filamentary tip of approximately 5 X 108 cm/s. The measured spectral content of the filaments in a bulk structure is presented for various bias voltages and compared to a theoretical model for band-to-band recombination considering temperature, carrier density, and self-absorption effects.
The specific source requirements of UWB Radars have been difficult to meet with existing microwave sources. BASS provides a technology which makes long range, high resolution UWB Radars feasible. The high peak power and burst rate capability of BASS-based microwave generators when combined with their exceptional reliability, temporal, amplitude and spectral stability results in an ideal source for UWB Radar applications. We demonstrate the unique capabilities of the BASS technology in the following discussion.
Dark current characterization of GaAs photoconductive switches is examined with an emphasis on low frequency current oscillations caused by travelling charge domains in the semiconductor. The voltage controlled negative differential resistance responsible for this phenomenon is due to field enhanced capture of deep level traps and is
utilized for extraction of trap parameters using simple thermionic measurements. The GaAs switch investigated is of the avalanche variety and has been shown to produce current filament.ation in the on state. Since this latter effect is associated with a current controlled negative differential resistance region, we speculate on the nature of the transition between the two states.
Recently several groups (see for example Refs. 1-9) have been investigating optically initiated GaAs avalanche switches first introduced by Williamson et al. (10). Although the configurations vary, these switches have the following common properties: a gain on the order of 1000 in current over that expected from the injected photocarriers, switching at fields several times lower than the published GaAs avalanche field, a very fast rise time typically occurring a few nanoseconds after the start of the laser pulse, and the device eventually evolving into a lock-on condition characterized by a fixed voltage drop proportional to the electrode spacing. At this time a complete understanding of the device physics is lacking. Theoretical investigation of field enhancement from the injected carriers has shown that this effect is not large enough to produce the initial avalanche (8). Both Gunn (3-5,7,9) and impurity (2,3,6) effects have been suggested as important aspects of the device operation during the lock-on condition. In the next two sections, we describe an empirical model of the initial switching of the device followed by comparing the model predictions to data obtained on doughnut hole configuration devices. The last section discusses the implications of the model on the device physics.
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