Mr. Jeong Hoon Lee Profile

Jeong Hoon Lee

at SAMSUNG Electronics Co Ltd

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Author

Publications (4)

Proceedings Article | 29 September 2010 Paper

Model-based double dipole lithography for sub-30nm node device

A-Young Je, Soo-Han Choi, Jeong-Hoon Lee, Ji-Young Lee, James Word, Chul-Hong Park, Sang-Hoon Lee, Moon-Hyun Yoo, Gyu-Tae Kim

Proceedings Volume 7823, 78230Z (2010) https://doi.org/10.1117/12.864081

KEYWORDS: Photomasks, Lithography, Model-based design, Image processing, Optical proximity correction, Metals, Manufacturing, Optical lithography, Lithographic illumination, Instrument modeling

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As the optical lithography advances into the sub-30nm technology node, the various candidates of lithography have been discussed. Double dipole lithography (DDL) has been a primary lithography candidate due to the advantages of a simpler process and a lower mask cost compared to the double patterning lithography (DPL). However, new DDL requirements have been also emerged to improve the process margin and to reduce the mask-enhanced error factor (MEEF), which is to maximize the resolution and image contrast. There are two approaches in DDL i.e. model basedand rule based-DDLs. Rule-based DDL, in which the patterns are decomposed by the simple rules such as x- and ydirectional rules, shows the low process margin in the 2-dimension (2D) patterns, i.e., line-end to line-end, line-end to bar and semi-isolated bars. In this paper, we first present various analyses of our new model-based DDL (MBDDL) method. Our goal is to maximize the process margin of the 2D patterns. Our main contributions are as follows. (1) We generate new 2D test patterns including various configurations of the metal layer. The new 2D patterns can be used to optimize the parameters of the MBDDL and to build the good design rules. The purpose of building the good design rules is improving the process margin of the certain 2D patterns with the low process margin in spite of optimizing the parameters of MBDDL. (2) We optimize the initial layout decomposition, which is the first step of MBDDL and affects the whole of MBDDL quality. In addition, the model-based decomposition is applied with the process-window OPC (PWOPC) in terms of the criteria of edge placement error (EPE) and mask rule checking (MRC) violation. Our new model-based approach including the newly designed test patterns and optimized decomposition parameters leads to the improved depth of focus (DOF) and enhanced the exposure latitude (EL). We achieve the 80nm DOF, which is the manufacturable margin for the metal 1 layer at the sub-30nm node.

Proceedings Article | 18 March 2009 Paper

Assessment of full-chip level EUV optical correction for sub-40nm memory device

Jeonghoon Lee, Insung Kim, Doohoon Goo, Joo-on Park, Changmin Park, Jinhong Park, Jeongho Yeo, Seongwoon Choi, Woosung Han

Proceedings Volume 7271, 727142 (2009) https://doi.org/10.1117/12.813996

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Optical proximity correction, Reflectivity, Scanners, Critical dimension metrology, EUV optics, Optical calibration, Cadmium

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Proceedings Article | 18 March 2009 Paper

The application of EUV lithography for 40nm node DRAM device and beyond

Joo-on Park, Chawon Koh, Doohoon Goo, InSung Kim, Changmin Park, Jeonghoon Lee, JinHong Park, JeongHo Yeo, Seong-Woon Choi, Chan-hoon Park

Proceedings Volume 7271, 727114 (2009) https://doi.org/10.1117/12.814001

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Etching, Photomasks, Semiconducting wafers, Scanners, Optical proximity correction, Light sources, Resistance

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Proceedings Article | 4 December 2008 Paper

Methodology of flare modeling and compensation in EUVL

Insung Kim, Hoyoung Kang, Changmin Park, Joo-On Park, Jeonghoon Lee, Jinhong Park, Doohoon Goo, Jeongho Yeo, Seong-Woon Choi, Woosung Han

Proceedings Volume 7140, 714009 (2008) https://doi.org/10.1117/12.804673

KEYWORDS: Point spread functions, Fractal analysis, Extreme ultraviolet, Lithography, Optical proximity correction, Photomasks, Critical dimension metrology, Modulation transfer functions, Convolution, Cadmium

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